KR950003481A - High Quality GaAs Polycrystalline Growth Method by 3T-HB Method - Google Patents

High Quality GaAs Polycrystalline Growth Method by 3T-HB Method Download PDF

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Publication number
KR950003481A
KR950003481A KR1019930013160A KR930013160A KR950003481A KR 950003481 A KR950003481 A KR 950003481A KR 1019930013160 A KR1019930013160 A KR 1019930013160A KR 930013160 A KR930013160 A KR 930013160A KR 950003481 A KR950003481 A KR 950003481A
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KR
South Korea
Prior art keywords
gaas
high quality
temperature range
growth method
quality gaas
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KR1019930013160A
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Korean (ko)
Inventor
송준석
오명환
노용정
김순홍
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박원근
금성전선 주식회사
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Priority to KR1019930013160A priority Critical patent/KR950003481A/en
Publication of KR950003481A publication Critical patent/KR950003481A/en

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Abstract

본 발명은 GaAs 다결정 성장에 관한 것으로, 종래의 2T-HB에서 Ga, Si와 석영 유리와의 웨팅 반응으로 인하여 GaAs 용액내의 도펀트(dopant)외에 불필요한 Si의 유입과 Ga 보우트의 균열 등이 초래되고, 전기로 이동시 GaAs 다결정 잉곳내의 온도차로 인한 웨팅 반응과 함께 잉곳의 균열이 발생되는 문제점을 해결하기 위하여, 1250~1260℃의 온도영역(T1)과 1150~1220℃의 온도영역(T2), 그리고 610~630℃의 온도영역(T3)을 설정하여 8~12시간 안정화한 후 전기로를 이동시켜 GaAs 다결정을 성장시키는 3T-HB법에 의한 고품위 GaAs 다결정 성장방법이다.The present invention relates to GaAs polycrystal growth, and in the conventional 2T-HB, due to the wetting reaction of Ga, Si and quartz glass, unnecessary inflow of Si and cracking of Ga-Boat, in addition to the dopant in the GaAs solution, is caused. in order to solve the problem of cracks in the ingot produced with the wetting reaction due to the temperature difference in the movement into an electric GaAs polycrystal ingot, the temperature range (T 1) and a temperature range of 1150 ~ 1220 ℃ of 1250 ~ 1260 ℃ (T 2) , And it is a high-quality GaAs polycrystal growth method by the 3T-HB method to grow the GaAs polycrystals by moving the electric furnace after stabilizing for 8 to 12 hours by setting the temperature region (T 3 ) of 610 ~ 630 ℃.

Description

3T-HB법에 의한 고품위 GaAs 다결정 성장 방법High Quality GaAs Polycrystalline Growth Method by 3T-HB Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래의 2T-HB 법에서의 온도 프로파일(profile)과 석영 반응관을 나타내는 도면, 제2도는 본 발명의 3T-HB 법에서의 온도 프로파일과 석영 반응관을 나나태는 도면.1 shows a temperature profile and a quartz reaction tube in the conventional 2T-HB method, and FIG. 2 shows a temperature profile and a quartz reaction tube in the 3T-HB method of the present invention.

Claims (1)

HB법을 이용한 GaAs 다결정 성장방법에 있어서, 확산장벽(Diffusion barrier)과 함께 전기로에 1250~1260℃의 온도영역(T1)과 1150~1220℃의 온도영역(T2), 그리고 610~630℃의 온도영역(T3)을 설정하여 8~12시간 안정화한 후 전기로를 이동시켜 GaAs 다결정을 성장시키는 것을 특징으로 하는 3T-HB법에 의한 고품위 GaAs 다결정 성장 방법.In the GaAs polycrystal growth method using the HB method, a diffusion barrier (Diffusion barrier) and the temperature range (T 1) and a temperature range of 1150 ~ 1220 ℃ of 1250 ~ 1260 ℃ in an electric furnace with (T 2), and 610 ~ 630 ℃ The high quality GaAs polycrystal growth method according to the 3T-HB method, characterized in that the GaAs polycrystals are grown by moving the electric furnace after stabilizing 8 to 12 hours by setting the temperature region (T 3 ) of. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930013160A 1993-07-13 1993-07-13 High Quality GaAs Polycrystalline Growth Method by 3T-HB Method KR950003481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930013160A KR950003481A (en) 1993-07-13 1993-07-13 High Quality GaAs Polycrystalline Growth Method by 3T-HB Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930013160A KR950003481A (en) 1993-07-13 1993-07-13 High Quality GaAs Polycrystalline Growth Method by 3T-HB Method

Publications (1)

Publication Number Publication Date
KR950003481A true KR950003481A (en) 1995-02-17

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KR1019930013160A KR950003481A (en) 1993-07-13 1993-07-13 High Quality GaAs Polycrystalline Growth Method by 3T-HB Method

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KR (1) KR950003481A (en)

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