KR940018490A - Seedwell.Distortion Inhibition Method for Fabricating High Quality Gallium Arsenide Wafers in the Growth of Gallium Arsenide Single Crystals by the Horizontal Bridgman Method - Google Patents

Seedwell.Distortion Inhibition Method for Fabricating High Quality Gallium Arsenide Wafers in the Growth of Gallium Arsenide Single Crystals by the Horizontal Bridgman Method Download PDF

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KR940018490A
KR940018490A KR1019930001173A KR930001173A KR940018490A KR 940018490 A KR940018490 A KR 940018490A KR 1019930001173 A KR1019930001173 A KR 1019930001173A KR 930001173 A KR930001173 A KR 930001173A KR 940018490 A KR940018490 A KR 940018490A
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South Korea
Prior art keywords
gallium arsenide
wafer
single crystal
seedwell
high quality
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KR1019930001173A
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Korean (ko)
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송준석
오명환
이호성
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박원근
금성전선 주식회사
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Priority to KR1019930001173A priority Critical patent/KR940018490A/en
Publication of KR940018490A publication Critical patent/KR940018490A/en

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Abstract

본 발명은 수평 브리지만(Horizontal Bridgman)법에 의한 갈륨비소(GaAs)의 단결정 성장시 시드웰(Seed Well)의 변형을 방지하여 고품위의 갈륨비소(GaAs)웨이퍼(WAFER)를 제조하기 위한 방법으로서, 특히 HB법에 의한 갈륨비소 단결정 제조시 시드웰(Seed Well)이 중력 방향으로 변형되는 것을 상부에는 시드웰을 받쳐주는 받침판과 하부에는 받침판을 지지하여 주는 지지대로 형성된 받침대를 이요하여 효과적으로 변형을 방지하여 시드웰의 처짐이 발생하면 (111)웨이퍼에서 윗부분과 아랫부분의 불순물 농도차이가 더욱 심하게 되고 (100)웨이퍼의 고액계면의 기울기에 따라 차이가 있지만 불순물 농도가 악화되는 방향으로 성장되어 농도분포가 균일하지 못한 방향으로 결정이 성장되는 것을 방지하게 되어 균일한 농도 분포의 갈륨비소 단결정을 제조할 수 있게 되므로 고품질의 웨이퍼를 제조할 수 있게된 HB법에 의한 시드웰의 변형을 방지하기 위한 갈륨비소 단결정 제조방법에 관한 것이다.The present invention is a method for manufacturing a high quality gallium arsenide (GaAs) wafer (WAFER) by preventing the deformation of the seed well during the single crystal growth of gallium arsenide (GaAs) by the Horizontal Bridgman method, In particular, during the production of gallium arsenide single crystal by the HB method, seed wells are deformed in the direction of gravity and a support plate supporting the seed wells at the top and a support plate supporting the support plates at the bottom thereof effectively prevents deformation of the seed wells. When the deflection occurs, the difference between the impurity concentrations of the upper and lower portions of the (111) wafer becomes more severe and varies depending on the slope of the solid-liquid interface of the (100) wafer, but it grows in a direction in which the impurity concentration worsens. It prevents the crystals from growing in the wrong direction, which makes it possible to produce a single concentration of gallium arsenide For preventing the deformation of the Sidwell by the high-quality wafer can be produced, HB method gallium arsenide single crystal relates to a method of manufacturing the same.

Description

수평 브리지만법에 의한 갈륨비소 단결정 성장에서 고품위 갈륨비소웨이퍼를 제조하기 위한 시드웰 왜곡의 억제 방법A method of suppressing seedwell distortion for producing high quality gallium arsenide wafers in the growth of gallium arsenide single crystals by the horizontal bridging method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 수평브리지만법에 의한 갈륨비소(GaAs) 단결정 성장시 온도분포를 나타낸 전체 구성도, 제 2 도는 갈륨비소(GaAs)의 단결정 성장시 고액 계면을 나타낸 석영 유리관 보우트.1 is an overall configuration diagram showing the temperature distribution during the growth of gallium arsenide (GaAs) single crystal by the horizontal bridging method, and FIG. 2 is a quartz glass tube boat showing the solid-liquid interface during the growth of gallium arsenide (GaAs) single crystal.

Claims (1)

HB법을 이용한 갈륨비소(GaAs)단결정 제조방법에 있어서, 상부에는 시드웰(54)을 받쳐주는 받침판(56)과 하부에는 받침판(56)을 지지하여주는 지지대(58)로 형성된 받침대(60)를 각각 석영유리 보우트(52)의 시드웰(54)하부는 받침대(60)의 받침판(56)으로 받쳐주고 지지대(58)의 하부에는 석영유리 반응관(50)에 지지시켜 설치한 후 고온부 1250℃~1260℃, 저온부 610℃~620℃, 온도구배 2~5℃, 성장속도 1~5mm/hr의 성장조건으로 제조함을 특징으로 하는 HB법에 의한 시드웰의 변형을 방지하기 위한 갈륨비소 단결정 제조방법.In the method for producing gallium arsenide (GaAs) single crystal using the HB method, a pedestal 60 formed of a support plate 56 supporting the seed well 54 at the upper portion and a support 58 supporting the support plate 56 at the lower portion thereof. The lower part of the seed well 54 of the quartz glass boat 52 is supported by the support plate 56 of the pedestal 60, and the lower part of the support 58 is supported by the quartz glass reaction tube 50 to be installed. Method for producing gallium arsenide single crystal to prevent deformation of seedwell by HB method characterized in that the manufacturing conditions of 1260 ℃, low temperature 610 ℃ ~ 620 ℃, temperature gradient 2 ~ 5 ℃, growth rate of 1 ~ 5mm / hr . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930001173A 1993-01-29 1993-01-29 Seedwell.Distortion Inhibition Method for Fabricating High Quality Gallium Arsenide Wafers in the Growth of Gallium Arsenide Single Crystals by the Horizontal Bridgman Method KR940018490A (en)

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KR1019930001173A KR940018490A (en) 1993-01-29 1993-01-29 Seedwell.Distortion Inhibition Method for Fabricating High Quality Gallium Arsenide Wafers in the Growth of Gallium Arsenide Single Crystals by the Horizontal Bridgman Method

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KR1019930001173A KR940018490A (en) 1993-01-29 1993-01-29 Seedwell.Distortion Inhibition Method for Fabricating High Quality Gallium Arsenide Wafers in the Growth of Gallium Arsenide Single Crystals by the Horizontal Bridgman Method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050083261A (en) * 2004-02-23 2005-08-26 네오세미테크 주식회사 Optimum growth parameters for gaas single crystals grown by vertical bridgman method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050083261A (en) * 2004-02-23 2005-08-26 네오세미테크 주식회사 Optimum growth parameters for gaas single crystals grown by vertical bridgman method

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