CN116536768B - Crucible for growth of tellurium-zinc-cadmium monocrystal and growth method - Google Patents
Crucible for growth of tellurium-zinc-cadmium monocrystal and growth method Download PDFInfo
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- CN116536768B CN116536768B CN202310778097.8A CN202310778097A CN116536768B CN 116536768 B CN116536768 B CN 116536768B CN 202310778097 A CN202310778097 A CN 202310778097A CN 116536768 B CN116536768 B CN 116536768B
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- cadmium
- crucible
- inner diameter
- zinc
- tellurium
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- 229910052793 cadmium Inorganic materials 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims description 16
- 239000013078 crystal Substances 0.000 claims abstract description 49
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000007787 solid Substances 0.000 claims abstract description 9
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 10
- 230000004308 accommodation Effects 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 230000006911 nucleation Effects 0.000 abstract description 5
- 238000010899 nucleation Methods 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 4
- 238000002309 gasification Methods 0.000 abstract description 3
- 229940065285 cadmium compound Drugs 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a crucible for growth of tellurium-zinc-cadmium single crystals, which comprises: a primary crucible and a secondary crucible; wherein the primary crucible is provided with a containing space; the accommodating space is internally provided with a secondary crucible and a cadmium source communicated with the secondary crucible; the secondary crucible comprises: a first inner diameter portion and a second inner diameter portion; the inner diameter of the first inner diameter part is larger than that of the second inner diameter part, and a reducing part is formed between the first inner diameter part and the second inner diameter part. The crucible provided by the invention provides a first temperature for the cadmium source, so that the gasified cadmium source can balance gasification of cadmium in tellurium-zinc-cadmium polycrystal at a second temperature, thereby maintaining positive chemical proportion and realizing growth of inclusion-free single crystal; the tellurium-zinc-cadmium seed crystal is arranged at the top of the secondary crucible, so that directional single crystal growth from top to bottom can be realized, and the density of tellurium-zinc-cadmium is smaller than that of tellurium-zinc-cadmium solid in a molten state, so that the crystal is separated from the inner wall of the crucible during single crystal growth, nucleation on the side wall of the crucible is avoided, and large single crystal growth is realized.
Description
Technical Field
The invention relates to the technical field of tellurium-zinc-cadmium single crystal growth, in particular to a crucible for growth of tellurium-zinc-cadmium single crystal and a growth method.
Background
At present, tellurium-zinc-cadmium monocrystal growing method is to seal tellurium-zinc-cadmium polycrystal in a quartz tube, and grow by means of vertical Bridgman, vertical gradient solidification method or moving heater heating; in the process, cadmium in the tellurium-zinc-cadmium compound evaporates, so that the tellurium-zinc-cadmium compound deviates from positive chemical proportion, and impurities are generated; in the melt growth mode, the wall of the crucible is in contact with the melt, so that the tellurium zinc cadmium nucleation energy is low, the nucleation is easy to form on the side wall of the crucible, and the generated miscellaneous crystals can influence the growth of main crystals; therefore, there is a need for a crucible and a method for growing a cadmium zinc telluride single crystal.
Disclosure of Invention
The invention aims at overcoming the defects in the prior art and provides a crucible and a growing method for growing tellurium-zinc-cadmium single crystals.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: a first aspect of the present invention is to provide a crucible for growth of cadmium zinc telluride single crystals, comprising: a primary crucible and a secondary crucible; wherein the primary crucible is provided with an accommodating space; the accommodating space is internally provided with the secondary crucible and a cadmium source communicated with the secondary crucible; the secondary crucible includes: a first inner diameter portion located at the upper side, and a second inner diameter portion located at the lower side; the inner diameter of the first inner diameter part is larger than that of the second inner diameter part, and a diameter reducing part is formed between the first inner diameter part and the second inner diameter part.
Preferably, the primary crucible sequentially comprises from top to bottom: a first inner diameter section, a reduced diameter section, and a second inner diameter section; wherein the inner diameter of the first inner diameter section is larger than the inner diameter of the second inner diameter section.
Preferably, the primary crucible comprises: a sealing plug disposed within the first inner diameter section; wherein, the sealing plug isolates the external environment of the primary crucible and the accommodating space.
Preferably, the primary crucible comprises: a support plate disposed within the reduced diameter section; the accommodation space includes: a first receiving space located within the first inner diameter section, and a second receiving space located within the second inner diameter section; wherein, a plurality of through holes which are communicated with the first accommodating space and the second accommodating space are formed in the supporting plate; or, a gap is arranged between part of the outer edge of the supporting plate and the inner wall of the reducing section.
Preferably, the secondary crucible is arranged in the first accommodating space, and the cadmium source is arranged in the second accommodating space.
Preferably, the secondary crucible is internally provided with tellurium-zinc-cadmium polycrystal, and the liquid level of the tellurium-zinc-cadmium polycrystal in a molten state is positioned in the first inner diameter part.
Preferably, a cadmium zinc telluride seed crystal is arranged at the upper end of the secondary crucible, and the cadmium zinc telluride seed crystal comprises: a support section, and an extension section; wherein a width of a portion of the support section is greater than a width of an upper end outer edge of the first inner diameter portion; the extension section extends into the first inner diameter portion.
Preferably, the liquid surface of the tellurium zinc cadmium polycrystal in a molten state is in contact with the extension section.
Further, the extension section is immersed under the liquid surface of the tellurium-zinc-cadmium polycrystal in a molten state.
In a second aspect, the invention provides a growth method of tellurium-zinc-cadmium single crystal, which adopts the crucible as described above and comprises the following steps: s1, providing a primary crucible, arranging a cadmium source at the bottom end of a second inner diameter section of the primary crucible, arranging a support plate in a reducing section of the primary crucible, and arranging a secondary crucible on the support plate; s2, setting solid tellurium-zinc-cadmium polycrystal in the secondary crucible; s3, setting solid tellurium-zinc-cadmium seed crystals on the secondary crucible; s4, setting a sealing plug in the first inner diameter section of the primary crucible so as to isolate the external environment of the primary crucible and the accommodating space of the primary crucible; s5, providing a first temperature for the cadmium source, wherein the cadmium is gasified at the first temperature; providing a second temperature to the tellurium-zinc-cadmium polycrystal, wherein the tellurium-zinc-cadmium polycrystal is melted at the second temperature; at the moment, the extension section of the tellurium-zinc-cadmium seed crystal contacts the liquid level of the tellurium-zinc-cadmium polycrystal in a molten state, and the support section of the tellurium-zinc-cadmium seed crystal is erected at the upper end of the first inner diameter part of the secondary crucible; s6, gradually cooling from the upper end of the tellurium-zinc-cadmium polycrystal to the lower end of the tellurium-zinc-cadmium polycrystal, so that the tellurium-zinc-cadmium polycrystal gradually crystallizes towards the tellurium-zinc-cadmium seed crystal; in the process, the tellurium-zinc-cadmium polycrystal is separated from the inner wall of the secondary crucible.
Preferably, the first temperature is 780 ℃ to 840 ℃.
Preferably, the second temperature is 1050-1120 ℃, and part of tellurium-zinc-cadmium polycrystal is gasified at the second temperature; wherein the pressure provided by the gasified cadmium source is balanced with the pressure provided by the gasified tellurium-zinc-cadmium polycrystal.
Compared with the prior art, the invention has the following technical effects: the crucible provided by the invention provides a first temperature for the cadmium source, so that the gasified cadmium source can balance gasification of cadmium in tellurium-zinc-cadmium polycrystal at a second temperature, thereby maintaining positive chemical proportion and realizing growth of inclusion-free single crystal; the tellurium-zinc-cadmium seed crystal is arranged at the top of the secondary crucible, so that directional single crystal growth from top to bottom can be realized, and the density of tellurium-zinc-cadmium is smaller than that of tellurium-zinc-cadmium solid in a molten state, so that the crystal is separated from the inner wall of the crucible during single crystal growth, nucleation on the side wall of the crucible is avoided, and large single crystal growth is realized.
Drawings
FIG. 1 is a schematic view of a crucible according to the present invention;
FIG. 2 is an enlarged schematic view of a partial structure at A in FIG. 1;
FIG. 3 is a graph showing the relationship between the temperature supplied to the primary crucible and the height of the primary crucible in step S5 of the growth method of the present invention;
wherein, the reference numerals include: a primary crucible 1; a first inner diameter section 11; a sealing plug 111; a reducing section 12; a support plate 121; a second inner diameter section 13; a cadmium source 131; a secondary crucible 2; a first inner diameter portion 21; a reduced diameter portion 22; a second inner diameter portion 23; cadmium zinc telluride polycrystal 24; cadmium zinc telluride seed crystal 25.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other.
The invention is further described below with reference to the drawings and specific examples, which are not intended to be limiting.
Example 1
The embodiment provides a crucible for growth of tellurium-zinc-cadmium single crystals, which comprises: a primary crucible 1 and a secondary crucible 2; as shown in fig. 1, the primary crucible 1 sequentially includes, from top to bottom: a first inner diameter section 11, a reducing section 12, and a second inner diameter section 13; the inner diameter of the first inner diameter section 11 is larger than that of the second inner diameter section 13, the first inner diameter section 11 is provided with a first accommodating space, a sealing plug 111 is arranged in the first inner diameter section 11, and the sealing plug 111 isolates the external environment of the primary crucible from the first accommodating space; the second inner diameter section 13 has a second accommodating space, and a cadmium source 131 is arranged at the bottom end of the second inner diameter section 13; wherein, a supporting plate 121 is arranged in the reducing section 13, the supporting plate 121 is provided with the secondary crucible 2, and a plurality of through holes which are communicated with the first accommodating space and the second accommodating space are arranged on the supporting plate 121; (in another preferred embodiment, a space is provided between a part of the outer edge of the support plate 121 and the inner wall of the reducing section 12; as shown in FIG. 2, the secondary crucible 2 comprises: a first inner diameter portion 21 located on an upper side, a second inner diameter portion 23 located on a lower side, and a reduced diameter portion 22 located between the first inner diameter portion 21 and the second inner diameter portion 23, the inner diameter of the first inner diameter portion 21 being larger than the inner diameter of the second inner diameter portion 23; wherein, the inside of the secondary crucible 2 is provided with tellurium-zinc-cadmium polycrystal 24, and the liquid surface of the tellurium-zinc-cadmium polycrystal 24 in a molten state is positioned in the first inner diameter part 21; wherein, the upper end of the secondary crucible 2 is provided with a tellurium-zinc-cadmium seed crystal 25, and the tellurium-zinc-cadmium seed crystal 25 comprises: the width of the part of the supporting section is larger than the width of the outer edge of the upper end of the first inner diameter part 21, the extending section extends into the first inner diameter part 21, and the extending section is contacted with the liquid level of the molten tellurium-zinc-cadmium polycrystal 24.
Example 2
The embodiment provides a growth method of tellurium-zinc-cadmium single crystal, which adopts the crucible as described in the embodiment 1, and comprises the following steps: s1, providing the primary crucible 1, arranging the cadmium source 131 at the bottom end of the second inner diameter section 13 of the primary crucible 1, arranging the support plate 121 in the reducing section 12 of the primary crucible 1, and arranging the secondary crucible 2 on the support plate 121; s2, setting solid tellurium-zinc-cadmium polycrystal 24 in the secondary crucible 2; s3, setting solid tellurium-zinc-cadmium seed crystal 25 on the secondary crucible 2; s4, arranging a sealing plug 111 in the first inner diameter section 11 of the primary crucible 1 to isolate the external environment of the primary crucible 1 from the accommodating space of the primary crucible 1; s5, as shown in FIG. 3, providing a first temperature of 780-840 ℃ for the cadmium source 131, wherein the cadmium source 131 is gasified at the first temperature; providing a second temperature of 1050-1120 ℃ to the cadmium zinc telluride polycrystalline 24, the cadmium zinc telluride polycrystalline 24 being melted at the second temperature, a portion of the cadmium zinc telluride polycrystalline 24 being gasified at the second temperature; wherein the pressure provided by the gasified cadmium source 131 is balanced with the pressure provided by the gasified cadmium zinc telluride polycrystalline 24; at this time, the extension section of the tellurium-zinc-cadmium seed crystal 25 contacts the liquid surface of the molten tellurium-zinc-cadmium polycrystal 24, and the support section of the tellurium-zinc-cadmium seed crystal 25 is erected at the upper end of the first inner diameter portion 21 of the secondary crucible 2; s6, gradually cooling from the upper end of the tellurium-zinc-cadmium polycrystal 24 to the lower end of the tellurium-zinc-cadmium polycrystal 24, so that the tellurium-zinc-cadmium polycrystal 24 gradually crystallizes towards the tellurium-zinc-cadmium seed crystal 25; in the process, the tellurium-zinc-cadmium polycrystal is separated from the inner wall of the secondary crucible.
In summary, the crucible of the invention provides the first temperature for the cadmium source, so that the gasified cadmium source can balance the gasification of cadmium in the tellurium-zinc-cadmium polycrystal at the second temperature, thereby maintaining the positive chemical proportion and realizing the growth of the inclusion-free monocrystal; the tellurium-zinc-cadmium seed crystal is arranged at the top of the secondary crucible, so that directional single crystal growth from top to bottom can be realized, and the density of tellurium-zinc-cadmium is smaller than that of tellurium-zinc-cadmium solid in a molten state, so that the crystal is separated from the inner wall of the crucible during single crystal growth, nucleation on the side wall of the crucible is avoided, and large single crystal growth is realized.
The foregoing description is only illustrative of the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, and it will be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and illustrations of the present invention, and are intended to be included within the scope of the present invention.
Claims (8)
1. A crucible for growing a cadmium zinc telluride single crystal, comprising: a primary crucible (1) and a secondary crucible (2); wherein,,
the primary crucible (1) is provided with a containing space; the accommodating space is internally provided with the secondary crucible (2) and a cadmium source (131) communicated with the secondary crucible (2);
the secondary crucible (2) comprises: a first inner diameter portion (21) located on the upper side, and a second inner diameter portion (23) located on the lower side; the inner diameter of the first inner diameter part (21) is larger than the inner diameter of the second inner diameter part (23), and a reducing part (22) is formed between the first inner diameter part (21) and the second inner diameter part (23);
a tellurium-zinc-cadmium polycrystal (24) is arranged in the secondary crucible (2), and the liquid level of the tellurium-zinc-cadmium polycrystal (24) in a molten state is positioned in the first inner diameter part (21);
the upper end of the secondary crucible (2) is provided with a tellurium-zinc-cadmium seed crystal (25), and the tellurium-zinc-cadmium seed crystal (25) comprises: a support section, and an extension section;
wherein, the width of the part of the supporting section is larger than the width of the outer edge of the upper end of the first inner diameter part (21), and the supporting section is erected at the upper end of the first inner diameter part (21);
wherein the extension section extends into the first inner diameter part (21), and the extension section is contacted with the liquid level of the tellurium-zinc-cadmium polycrystal (24) in a molten state.
2. Crucible according to claim 1, characterized in that said primary crucible (1) comprises, in sequence from top to bottom: a first inner diameter section (11), a reducing section (12), and a second inner diameter section (13);
wherein the inner diameter of the first inner diameter section (11) is larger than the inner diameter of the second inner diameter section (13).
3. Crucible according to claim 2, characterized in that the primary crucible (1) comprises: a sealing plug (111) disposed within the first inner diameter section (11); wherein,,
the sealing plug (111) isolates the external environment of the primary crucible (1) from the accommodating space.
4. Crucible according to claim 2, characterized in that the primary crucible (1) comprises: a support plate (121) provided in the reducing section (12);
the accommodation space includes: a first accommodation space located within the first inner diameter section (11), and a second accommodation space located within the second inner diameter section (13);
wherein, a plurality of through holes which are communicated with the first accommodating space and the second accommodating space are formed in the supporting plate (121); or, a gap is formed between part of the outer edge of the supporting plate and the inner wall of the reducing section (12).
5. The crucible according to claim 4, wherein the secondary crucible (2) is disposed in the first accommodation space and the cadmium source (131) is disposed in the second accommodation space.
6. A method for growing a cadmium zinc telluride single crystal using the crucible of any one of claims 1 to 5, comprising the steps of:
s1, providing the primary crucible (1), arranging the cadmium source (131) at the bottom end of a second inner diameter section (13) of the primary crucible (1), arranging a support plate (121) in a diameter-reducing section (12) of the primary crucible (1), and arranging the secondary crucible (2) on the support plate (121);
s2, setting solid tellurium-zinc-cadmium polycrystal (24) in the secondary crucible (2);
s3, setting solid tellurium-zinc-cadmium seed crystals (25) on the secondary crucible (2);
s4, arranging a sealing plug (111) in a first inner diameter section (11) of the primary crucible (1) so as to isolate the external environment of the primary crucible (1) from the accommodating space of the primary crucible (1);
s5, providing a first temperature for the cadmium source (131), wherein the cadmium source (131) is gasified at the first temperature;
providing a second temperature to the cadmium zinc telluride polycrystalline (24), the cadmium zinc telluride polycrystalline (24) melting at the second temperature;
the extending section of the tellurium-zinc-cadmium seed crystal (25) contacts the liquid level of the molten tellurium-zinc-cadmium polycrystal (24), and the supporting section of the tellurium-zinc-cadmium seed crystal (25) is erected at the upper end of the first inner diameter part (21) of the secondary crucible (2);
and S6, gradually cooling from the upper end of the tellurium-zinc-cadmium polycrystal (24) to the lower end of the tellurium-zinc-cadmium polycrystal (24) so that the tellurium-zinc-cadmium polycrystal (24) gradually crystallizes towards the tellurium-zinc-cadmium seed crystal (25).
7. A method of growing according to claim 6 wherein the first temperature is 780-840 ℃.
8. A growth method according to claim 6, wherein the second temperature is 1050-1120 ℃, and a portion of the cadmium zinc telluride polycrystal (24) is gasified at the second temperature; wherein,,
the pressure provided by the gasified cadmium source (131) is balanced with the pressure provided by the gasified cadmium zinc telluride polycrystalline (24).
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| CN202310778097.8A CN116536768B (en) | 2023-06-29 | 2023-06-29 | Crucible for growth of tellurium-zinc-cadmium monocrystal and growth method |
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