CN203878235U - Necking-down crystal crucible - Google Patents

Abstract

The utility model discloses a necking-down crystal crucible which is suitable for growing a large-diameter high-quality single crystal material with higher density than a melt. By utilizing the physical property that the volume is reduced when the tellurium-zinc-cadmium (CdZnTe) melt solidifies, the crucible with a necking-down middle part is designed, and the crystal is grown in the crucible downwards; when the melt solidifies to the necking-down part of the crucible, the crystal is fixed by the necking-down part and stopped from sliding down; since the volume is reduced, the diameter of the crystal below the necking-down part of the crucible is smaller than the internal diameter of the crucible, and the crystal is separated from the crucible wall; and as the crystal diameter becomes larger, the clearance between the crystal and the crucible wall becomes bigger, and the separation is more obvious. The necking-down crystal crucible has the advantages of large crystal diameter and high quality.

Description

A kind of necking down N-type waferN crucible

Technical field

This patent relates to a kind of crystal crucible, is specifically related to a kind of necking down N-type waferN crucible, and it is applicable to the growth of major diameter high quality single crystal that crystalline density is greater than the material of fusant density, is particularly useful for Te-Zn-Cd monocrystal growth.

Background technology

Te-Cd-Hg (HgCdTe, MCT) infrared focal plane detector has important application, the tellurium zinc cadmium (Cd that component is x=4% in high-end infrared acquisition fields such as military infrared imaging and space remote sensings _1-xzn _xte or CdZnTe) monocrystal material is the best substrate material of preparation high-performance long wave, very-long-wave mercury cadmium telluride infrared focal plane detector.Therefore, Main Developed Countries has all dropped into a large amount of strength in the preparation of Te-Zn-Cd monocrystal in the world, and main goal in research is to increase single crystal diameter, improves monocrystalline quality, thereby obtains large size, high-quality tellurium zinc cadmium substrate.

In addition, Cdl-x_Znx_Te can keep good light transmission features at comparatively broad infrared band, because of and be a kind of superior material of infrared window.Moreover, tellurium-zincium-cadmium crystal also has broad application prospects at aspects such as preparing X and gamma detector, solar cell, photomodulator, and therefore, the preparation of high quality Te-Zn-Cd monocrystal body receives much attention always.

At present, the comparatively successful method of growth major diameter Te-Zn-Cd monocrystal is vertical Bridgman method (VB), VGF (VGF) and mobile heating zone method (THM).The subject matter that these methods exist is at present:

1 because Cdl-x_Znx_Te thermal conductivity is very low, and when growth major diameter crystal, solid-liquid interface is difficult to control.Therefore, single crystal diameter is difficult to increase.

2 crystal easily produce the parasitic nucleation of sidewall of crucible in crucible intercrystalline process.

3 crystal in crucible intercrystalline process because crucible causes defect concentrations in crystals higher to the stress of crystal.

4 because Cdl-x_Znx_Te stacking fault energy is very low, and therefore, the existence of stress easily causes twin.

5 because melt convection is restive, and the crystal homogeneity therefore growing out is often be not as good as Czochralski grown crystal out.

In sum, temperature is controlled and contacted with crucible is that current Te-Zn-Cd monocrystal diameter is difficult to increase, one of main contributor that monocrystalline difficult quality improves.

Summary of the invention

The object of this patent is to provide a kind of necking down N-type waferN crucible, the physical properties of volume-diminished while utilizing tellurium zinc cadmium melt solidifying, make crystal from up to down growth in crucible, can realize the single crystal growing without sidewall of crucible contact, be especially applicable to the high-quality Te-Zn-Cd monocrystal body of growth major diameter.

A kind of structure of necking down type crucible as shown in Figure 1.Described necking down type crucible is " cucurbit " shape, crucible material can be selected quartz, graphite, vitreous carbon or pyrolitic boron nitride, crucible structure is divided into upper, middle and lower three parts, middle part is necking down, the crystal diameter that lower crucible inside diameter D 3 is required growth, middle part bottleneck crucible inside diameter D 2 is 0.1-1D3, and top crucible inside diameter D 1 than middle part bottleneck crucible inside diameter D 2 greatly.The length of the crystal that lower crucible length H3 is required growth; Middle part crucible length H2 is 0.1-0.5H3; After top crucible length H1 should guarantee that crucible institute package material all melts, melt liquid level is more than crucible necking down; Crucible wall thickness d is depending on crucible material, and quartz crucible is 2-5mm, and graphite or vitreous carbon crucible are 3-5mm, and pyrolytic boron nitride crucible is 0.6-1mm.

Without the single crystal growth process of sidewall of crucible contact as shown in Figure 2, single crystal growth process carries out in a kind of necking down type crucible as above.In crystal growing process, tellurium zinc cadmium melt starts from up to down to solidify from liquid level 2, when melt solidifying arrives crucible necking down 3 place, crystal 4 necking 3 is fixed, no longer glide, because the solid-state density of Cdl-x_Znx_Te is greater than liquid density, during melt crystallization, volume reduces, the diameter of the crystal 4 of crucible necking down below 3 is less than the internal diameter of crucible, between crystal 4 and crucible inwall 7, form gap 8, between melt 5 and gap 8, form and be similar to the meniscus 9 in crystal pulling method, solid-liquid interface 6 is contactless with sidewall of crucible 7, can realize like this single crystal growing without sidewall of crucible contact.Under the effect of meniscus 9, when the melt solidifying that Δ H is high becomes isopyknic crystal, reduced, but height Δ H is constant, and crystal 4 can be not separated because volume reduces with melt 5, and single crystal growth process can keep carrying out continuously, until melt is all solidified as crystal.

If nearly fusing point place melt 5 density are ρ _l, crystal 4 density are ρ _s, the crucible inside diameter D 3 of necking down part below 3 is D _l, the melt solidifying that Δ H is high is contour crystal, crystal 4 diameter D _sderivation is as follows:

${\mathrm{\ρ}}_L\×\mathrm{\π}\×\frac{D_L^2}{4}\×1H={\mathrm{\ρ}}_S\×\mathrm{\π}\×\frac{D_S^2}{4}\×1H---\left(1\right)$

${\mathrm{\ρ}}_L\×D_L^2={\mathrm{\ρ}}_S\×D_S^2---\left(2\right)$

$D_S=\sqrt{\frac{{\mathrm{\ρ}}_L}{{\mathrm{\ρ}}_S}}\×{\mathrm{\ρ}}_L---\left(3\right)$

The big or small W in the gap 8 between crystal 4 and sidewall of crucible 7 is

$W=\frac{D_L-D_S}{2}=\frac{1-\sqrt{\frac{{\mathrm{\ρ}}_1}{{\mathrm{\ρ}}_S}}}{2}\×D_L---\left(4\right)$

From above formula, crystal 4 is directly proportional to the big or small W in gap 8 and the inside diameter D 3 of crucible between sidewall of crucible 7, and the diameter of the crystal of growth is larger, and crystal 4 is separated more obvious with sidewall of crucible 7; The size in gap 8 also with material fusant density ρ _lwith crystalline density ρ _sratio ρ _l/ ρ _sbe inversely proportional to, ratio is less, and gap is larger.

Take cadmium telluride as example, nearly fusing point place cadmium telluride melt density p _lfor 5.64g/cm ³, crystalline density ρ _sfor 6.2g/cm ³, substitution formula (4) is

$W=\frac{1-\sqrt{\frac{3.34}{6.2}}}{2}\×D_L\≈0.023115\×D_L$ Formula (5)

If crucible inside diameter D _lfor 120mm, according to formula (5), to calculate, the gap between cadmium-telluride crystal and sidewall of crucible is about 2.8mm.

The single crystal that the growth diameter of take is L as D, length is example, and a kind of necking down type crucible and without the enforcement of sidewall of crucible contact method for monocrystal growth mainly comprises following step:

1) weighing raw materials, and the required starting material of growing of the crystal after weighing are packed in necking down type crucible;

2) as starting material need synthesize, raw-material crucible will be housed and put into synthetic furnace to carry out material synthetic, after having synthesized, crucible is put into rectilinear single crystal growing furnace; If starting material are without synthetic, crucible is directly put into rectilinear single crystal growing furnace.Crucible is vertically placed single crystal growing furnace planted agent;

3) temperature of single crystal growing furnace is set, high-temperature zone under, cold zone is upper, centre is gradient zones, and crucible is placed in high-temperature zone, single crystal growing furnace temperature is risen to the above and constant temperature of material melts temperature and keep a few hours, and material is fully melted;

4) carry out crystal growth, make crystal from up to down growth in crucible, growth method can be selected several as follows: a) fixing body of heater, and crucible moves up; B) fixing crucible, moves down body of heater; C) crucible and body of heater all maintain static, and move down temperature; D) crucible that moves up moves down body of heater simultaneously;

5) after crystal has been grown, single crystal growing furnace temperature is down to room temperature, in single crystal growing furnace, takes out crucible, then crystal is taken out in crucible.

This patent is disclosed mainly contains following six advantages without sidewall of crucible contact method for monocrystal growth:

The diameter of 1 crystal due to growth is larger, and crystal is separated with sidewall of crucible more obvious, and therefore, this method is especially applicable to growth large diameter single crystal.

2 contact without sidewall of crucible while growing due to crystal, therefore can avoid the parasitic nucleation of crystal being caused by sidewall of crucible.

3 because crystal is separated with sidewall of crucible, therefore can avoid crucible to produce stress to crystal.

4 because melt upper temp is low, and temperature of lower is high, therefore, is beneficial to formation melt convection, thereby avoid the constitutional supercooling phenomenon at solid-liquid interface place, is beneficial to the large diameter single crystal of growth.

5 because the crystal of liquid level after grown seals, and therefore can stop melt volatilization under high temperature, thereby avoid the component deviation that causes due to melt volatilization.

6 compare with Bridgman method, due to melt under, solid-liquid interface is stressed very little, is conducive to reduce the generation of stress defect.

Accompanying drawing explanation

A kind of necking down type of Fig. 1 crucible structure schematic diagram.

Fig. 2 is without the local enlarged diagram of sidewall of crucible contact single crystal growth process schematic diagram and solid-liquid interface place.Crystal is from up to down growth in crucible 1, and crystal 4 is upper, melt 5 under.In necking down, below 3, between crystal 4 and sidewall of crucible 7, have gap 8, between melt 5 and gap 8, form and be similar to the meniscus 9 in crystal pulling method, solid-liquid interface 6 is contactless with sidewall of crucible 7.

Embodiment

The Cd0.96Zn0.04Te single crystal that the growth specific diameter of take is below 150mm as 120mm, length is example, illustrates the embodiment of present method:

1 design crucible 1.Crucible material can be selected quartz, and as shown in Figure 2, crucible inside diameter D 1, D3 are 120mm to crucible structure, and bottleneck inside diameter D 2 is 20mm, and crucible wall thickness d is 3.5mm, and H1 is 100mm, and H2 is 60mm, and H3 is 150mm.

2 at quartz crucible inner surface plating carbon.By quartz crucible pumping high vacuum (vacuum tightness～5 * 10 ^?6pa), be heated to 900 degree left and right, be filled with appropriate high-purity methane gas, at high temperature there is cracking in methane gas, at inner surface of crucible, forms carbon film.

3 press Cd _0.96zn _0.04it is 7N(99.99999% that the stoichiometric of Te weighs respectively purity) tellurium (Te), zinc (Zn), cadmium (Cd) starting material, starting material weigh total amount and are about 13.8kg, and the starting material after weighing are packed in crucible.

4 by quartz crucible pumping high vacuum (vacuum tightness～5 * 10 ^?6pa), with oxyhydrogen flame, quartz crucible sintering is sealed.

5 put into synthetic furnace by quartz crucible, are first warming up to 450 ℃ of left and right, make Te, Zn, Cd simple substance generation combination reaction, then are warming up to 1130 ℃ of left and right, and keep more than 2 hours, make material chemical combination fully, mix, after cooling, obtain Cd _0.96zn _0.04te sosoloid.

6 put into vertical Bridgman single crystal growing furnace by the crucible after synthetic.Crucible is fixed on support bar, and crucible medullary ray need to be vertical with horizontal plane.

7 arrange the temperature of single crystal growing furnace.High-temperature zone under, temperature is 1110～1150 ℃; Cold zone is upper, and temperature is 900～1050 ℃; Thermograde is 3～20 ℃/cm.Crucible is placed in high-temperature zone, single crystal growing furnace is risen to above-mentioned design temperature, constant temperature more than 10 hours, fully melts material.

8 carry out single crystal growing.Crucible is maintained static, with the speed of 0.1～1mm/h, move down body of heater, start single crystal growing, until the whole crystallizations of melt are crystal, stop mobile body of heater, single crystal growing furnace is slowly down to room temperature.

9 take out crucible in single crystal growing furnace, then smash quartz crucible, by Cd _0.96zn _0.04te crystal takes out.

Claims (1)

1. a necking down N-type waferN crucible, it is characterized in that: described necking down type crucible is " cucurbit " shape, crucible material is selected quartz, graphite, vitreous carbon or pyrolitic boron nitride, crucible structure is divided into upper, middle and lower three parts, middle part is necking down, the crystal diameter that lower crucible inside diameter D 3 is required growth, and middle part bottleneck crucible inside diameter D 2 is 0.1-1D3, top crucible inside diameter D 1 than middle part bottleneck crucible inside diameter D 2 greatly, the length of the crystal that lower crucible length H3 is required growth; Middle part crucible length H2 is 0.1-0.5H3; After top crucible length H1 should guarantee that crucible institute package material all melts, melt liquid level is more than crucible necking down; Crucible wall thickness d is depending on crucible material, and quartz crucible is 2-5mm, and graphite or vitreous carbon crucible are 3-5mm, and pyrolytic boron nitride crucible is 0.6-1mm.