CN112647133A - Cadmium zinc telluride crystal growth method and device - Google Patents

Cadmium zinc telluride crystal growth method and device Download PDF

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Publication number
CN112647133A
CN112647133A CN202011486859.XA CN202011486859A CN112647133A CN 112647133 A CN112647133 A CN 112647133A CN 202011486859 A CN202011486859 A CN 202011486859A CN 112647133 A CN112647133 A CN 112647133A
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ampoule
cadmium
area
crystal
growth
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严冰
刘伟华
张传杰
余志杰
王博博
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Wuhan Gaoxin Technology Co Ltd
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Wuhan Gaoxin Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to a tellurium-zinc-cadmium crystal growth method, which comprises the following steps: s1, selecting a first ampoule with a material supplement area, a seeding area and a growth area distributed in sequence from top to bottom, and filling the tellurium-zinc-cadmium polycrystalline material into the material supplement area of the first ampoule; s2, packaging the ampoule filled with the tellurium-zinc-cadmium polycrystal material into a second ampoule; s3, carrying out a solidification process after packaging, so that the seeding region and the growth region are filled with the tellurium-zinc-cadmium polycrystal material; and S4, taking the first ampoule out of the second ampoule, and putting the first ampoule into a third ampoule for packaging, wherein the third ampoule is provided with cadmium metal. Also provides a tellurium-zinc-cadmium crystal growth device. The growth method of the invention adopts a vertical gradient method to finish the growth of the tellurium-zinc-cadmium crystal from top to bottom, and can effectively control the cadmium partial pressure at the solid-liquid interface of the tellurium-zinc-cadmium in the growth process, thereby reducing the generation of micro-precipitation phase.

Description

Cadmium zinc telluride crystal growth method and device
Technical Field
The invention relates to the technical field of cadmium zinc telluride growth, in particular to a cadmium zinc telluride crystal growth method and a cadmium zinc telluride crystal growth device.
Background
With the development of the third generation of the HgCdTe infrared focal plane towards the direction of small pixels, large area arrays and high performance, the HgCdTe infrared detector needs a high-quality epitaxial material with low defect density. Because the tellurium-zinc-cadmium can be perfectly matched with the tellurium-cadmium-mercury in a lattice mode by adjusting the Zn component, the tellurium-zinc-cadmium is considered to be an ideal substrate for the epitaxy of the tellurium-cadmium-mercury. However, the tellurium-zinc-cadmium substrate has second-phase micro-precipitation defects, and finally causes the image quality of the device to be reduced by influencing the quality of the tellurium-cadmium-mercury epitaxial layer. The cadmium pressure control technology is an ideal method for controlling the second-phase micro-precipitation defects in the current report, and the second-phase micro-precipitation defects with the diameter as small as several microns and the density can be obtained by controlling the cadmium partial pressure. In addition, because the intrinsic thermal conductivity of the tellurium-zinc-cadmium material is low, the latent heat of crystallization of a solid-liquid interface is difficult to release during the crystal growth, the tellurium-zinc-cadmium crystal with high single crystal rate is difficult to obtain, and the growth of the directional tellurium-zinc-cadmium seed crystal is mostly adopted at present to improve the tellurium-zinc-cadmium single crystal rate.
Disclosure of Invention
The invention aims to provide a cadmium zinc telluride crystal growth method and a cadmium zinc telluride crystal growth device, which can at least solve part of defects in the prior art.
In order to achieve the above purpose, the embodiments of the present invention provide the following technical solutions: a method for growing a cadmium zinc telluride crystal comprises the following steps:
s1, selecting a first ampoule with a material supplement area, a seeding area and a growth area distributed in sequence from top to bottom, and filling the tellurium-zinc-cadmium polycrystalline material into the material supplement area of the first ampoule;
s2, packaging the ampoule filled with the tellurium-zinc-cadmium polycrystal material into a second ampoule;
s3, carrying out a solidification process after packaging, so that the growth region and part of the seeding region are filled with the tellurium-zinc-cadmium polycrystal material;
and S4, taking the first ampoule out of the second ampoule, and putting the first ampoule into a third ampoule for packaging, wherein the third ampoule is provided with cadmium metal.
Further, between the step S3 and the step S4, before the first ampoule is placed into the third ampoule, the second ampoule is unpacked, the first ampoule is taken out, a cadmium zinc telluride seed crystal with a specific crystal orientation is placed in the crystal guiding region of the first ampoule, and then the first ampoule is placed into the third ampoule.
Furthermore, support points for supporting the tellurium-zinc-cadmium seed crystals with the specific crystal orientation are distributed in the seeding area, and the area below the support points of the seeding area is filled with the tellurium-zinc-cadmium polycrystal material.
Further, the method for loading the tellurium-zinc-cadmium seed crystal with the specific crystal orientation specifically comprises the following steps:
selecting cadmium zinc telluride with specific crystal orientation;
carrying out coarse grinding and fine grinding processes on the cadmium zinc telluride until the cadmium zinc telluride reaches the size matched with the inner diameter of the seeding area;
then, carrying out ultrasonic cleaning by absolute ethyl alcohol and carrying out bromomethanol corrosion;
then blowing the crystal to dry by adopting nitrogen and then loading the crystal into the crystal leading area.
Furthermore, a temperature control area is set outside the third ampoule, wherein the position of the metal cadmium is a cadmium source temperature control area, and the area of the first ampoule is a cadmium zinc telluride growth temperature control area.
Further, the cadmium source temperature control area is arranged above the cadmium zinc telluride growth temperature control area.
Further, the control temperature range of the cadmium source temperature control area is 700-1040 ℃ from top to bottom, and the initial distribution range of the tellurium-zinc-cadmium growth temperature control area is 1040-1140 ℃ from top to bottom.
Further, before the step S1, the inner wall of the first ampoule is coated with a carbon film.
Further, in the step S3, the solidification process is as follows:
firstly, heating the growth furnace to a target temperature field, wherein the temperature range of a high-temperature area is 1120-1140 ℃, and the temperature range of a low-temperature area is 1040-1100 ℃;
then, the first ampoule is subjected to heat preservation in the high-temperature area for 24-48 hours;
and after the tellurium-zinc-cadmium polycrystal material is fully melted, realizing vertical gradient solidification growth.
The embodiment of the invention provides another technical scheme: a cadmium zinc telluride crystal growth device comprises a first ampoule and a third ampoule for placing the first ampoule in, wherein a material supplement area, a seeding area and a growth area are sequentially distributed on the first ampoule from top to bottom, and cadmium metal is arranged in the third ampoule.
Compared with the prior art, the invention has the beneficial effects that:
1. the growth method adopts a vertical gradient solidification method to finish the growth of the cadmium zinc telluride from top to bottom, and the cadmium partial pressure at the solid-liquid interface of the cadmium zinc telluride can be effectively controlled in the growth process, so that the generation of a micro-precipitation phase is reduced.
2. The single crystal rate of the cadmium zinc telluride crystal can be improved by adopting the cadmium zinc telluride seed crystal with a specific crystal orientation.
3. By means of polycrystalline material secondary solidification, reasonable seeding area design and matching with the vertical gradient solidification method, the growth of the cadmium zinc telluride is completed from top to bottom, and the crystal growth technology of cadmium zinc telluride seed crystals with specific crystal orientation and cadmium partial pressure control can be realized simultaneously.
Drawings
FIG. 1 is a schematic diagram of a first ampoule of a CdZnTe crystal growth method provided in an embodiment of the present invention;
FIG. 2 is a schematic diagram of a method for growing a cadmium zinc telluride crystal according to an embodiment of the present invention, in which a first ampoule is placed in a second ampoule;
FIG. 3 is a schematic diagram of a method for growing a cadmium zinc telluride crystal according to an embodiment of the present invention, in which a first ampoule is filled into a third ampoule;
FIG. 4 is a schematic diagram illustrating an actual growth of a CdZnTe crystal growth method according to an embodiment of the present invention;
in the reference symbols: 1-a first ampoule; 10-material replenishment area; 11-a seeding region; 12-a growth area; 13-tellurium-zinc-cadmium seed crystal with specific crystal orientation; 14-a support point; 2-a second ampoule; 3-a third ampoule; 30-metallic cadmium; 4-cadmium source temperature control zone; 5-tellurium-zinc-cadmium growth temperature control area; 6-cadmium source monitoring temperature point; 7-seed crystal temperature monitoring point; 8-quartz stopper.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 2, fig. 3 and fig. 4, an embodiment of the present invention provides a method for growing a cadmium zinc telluride crystal, including the following steps: s1, selecting a first ampoule 1 which is sequentially distributed with a material supplement area 10, a seeding area 11 and a growth area 12 from top to bottom, and filling cadmium zinc telluride polycrystal into the material supplement area 10 of the ampoule; s2, packaging the ampoule filled with the tellurium-zinc-cadmium polycrystal material into a second ampoule 2; s3, carrying out a primary solidification process after packaging, so that the growth region 12 and a part of the seeding region 11 are filled with the tellurium-zinc-cadmium polycrystal material; s4, the first ampoule 1 is taken out of the second ampoule 2, and the first ampoule 1 is placed into a third ampoule 3 for packaging, wherein the third ampoule 3 is filled with cadmium 30. In the embodiment, the growth method adopts a vertical gradient method to finish the growth of the cadmium zinc telluride crystal from top to bottom, and the cadmium partial pressure at the solid-liquid interface of the cadmium zinc telluride can be effectively controlled in the growth process, so that the generation of a micro-precipitation phase is reduced. Specifically, three quartz ampoules are adopted in the whole growth process, and are respectively defined as a first ampoule 1, a second ampoule 2 and a third ampoule 3 for convenience of description, wherein the first ampoule 1 is an ampoule for crystal growth, the structure of the ampoule ensures the growth sequence from top to bottom, and the partial pressure of cadmium at a solid-liquid interface during the growth of the cadmium zinc telluride crystal can be effectively controlled compared with the growth from bottom to top in the prior art,the first ampoule 1 can be seen in three sections, the uppermost section being a material replenishment section 10 which is structurally wide and can accommodate a certain mass of material, and the second intermediate section being a seeding section 11 which is narrow and which serves to transfer the crystal to the growth section 12 of the lowermost section. In the process of growing, the actions of putting in and taking out and putting in a first ampoule 1 are involved, wherein fig. 2 shows the situation that the first ampoule 1 is put in a second ampoule 2, wherein the growth area 12 of the first ampoule 1 is filled with broken cadmium zinc telluride particles a, the gaps among multiple particles are reduced as much as possible in the process of charging, the proper mass range of the cadmium zinc telluride to be filled is calculated according to the cavity volume of the first ampoule 1 in the process of charging, and the supporting position of the multiple crystals in a seeding area after solidification in the later period is ensured; fig. 3 shows the situation that the first ampoule 1 is taken out of the second ampoule 2 and put into the third ampoule 3, wherein the growth area 12 of the first ampoule 1 is the molten and solidified cadmium zinc telluride b. After the first ampoule 1 is placed in the second ampoule 2, the sealing is performed by plugging with a quartz stopper 8 and then sealing the ampoule in a vacuum of less than 5X 10-5And (pa) carrying out oxyhydrogen flame vacuum tube sealing. Preferably, after a certain amount of high purity Cd is placed in third ampoule 3, a quartz stopper 8 for sealing the tube is placed under a vacuum of less than 5X 10-5And (pa) carrying out oxyhydrogen flame vacuum tube sealing.
Referring to fig. 1, 2 and 3 as an optimized solution of the embodiment of the present invention, before the first ampoule 1 is placed into the third ampoule 3 between the step S3 and the step S4, the second ampoule 2 is opened, the first ampoule 1 is taken out, a cadmium zinc telluride seed crystal with a specific crystal orientation is placed in the seeding region 11 of the first ampoule 1, and then the first ampoule 1 is placed into the third ampoule 3. In the embodiment, the single crystal rate of the cadmium zinc telluride crystal can be improved by using the cadmium zinc telluride seed crystal 13 with the specific crystal orientation, specifically, after the first ampoule 1 is taken out of the second ampoule 2, the cadmium zinc telluride seed crystal 13 with the specific crystal orientation is placed in the seeding region 11 of the first ampoule 1, and then the first ampoule 1 is placed in the third ampoule 3, a supporting point 14 for supporting the cadmium zinc telluride seed crystal 13 with the specific crystal orientation is arranged in the seeding region 11 of the first ampoule 1, and the region below the supporting point 14 of the seeding region 11 is filled with the cadmium zinc telluride polycrystal. The seeding region 11 can be a seed bag, i.e. the seed bag is partially overlapped with the seeding region 11, or the seed bag can be arranged in the seeding region 11 and is an independent part, wherein the seed bag is used for accommodating cadmium zinc telluride seeds with specific crystal orientation. The method for loading the cadmium zinc telluride seed crystal with the specific crystal orientation specifically comprises the following steps: selecting cadmium zinc telluride with specific crystal orientation; carrying out coarse grinding and fine grinding processes on the cadmium zinc telluride until the cadmium zinc telluride reaches the size matched with the inner diameter of the seeding area; then, carrying out ultrasonic cleaning by absolute ethyl alcohol and carrying out bromomethanol corrosion; and then blowing the seed crystal by using nitrogen, and then filling the seed crystal into the crystal leading region or a seed crystal bag, wherein in the embodiment, the length of the seed crystal can be selected to be 3-5 cm, the outer diameter is selected to be 10-20 cm, the seed crystal is polished for multiple times and then matched with the inner diameter of the crystal leading region, then the seed crystal is ultrasonically cleaned for 30min by using absolute ethyl alcohol, 2% volume fraction bromomethanol is adopted for corrosion for 10-30 min, the methanol and the ethyl alcohol are cleaned for two times after the corrosion, the nitrogen is blown and then placed into the supporting point position of the crystal leading region in the first ampoule 1, and if the polycrystalline material rate below the supporting point is small in volume, a certain amount of crushed tellurium-zinc-cadmium polycrystalline material can be calculated and supplemented to be filled into the crystal leading region below the.
As an optimized solution of the embodiment of the present invention, please refer to fig. 4, a temperature control region is set outside the third ampoule 3, wherein the cadmium metal 30 is located in the cadmium source temperature control region 4, and the first ampoule 1 is located in the cadmium zinc telluride growth temperature control region 5. Preferably, the cadmium source temperature control region 4 is arranged above the cadmium zinc telluride growth temperature control region 5, the control temperature range of the cadmium source temperature control region 4 is 700-1040 ℃ from top to bottom, the temperature of the Cd source is controlled to be stable at 750-850 ℃, and the initial distribution range of the temperature of the cadmium zinc telluride growth temperature control region 5 from top to bottom is 1040-1140 ℃. In this embodiment, growth is promoted by controlling the temperatures of different parts, and in the temperature control, a thermocouple can be used for real-time monitoring of the temperature, for example, the thermocouple is used for real-time monitoring of the cadmium source monitoring temperature point 6, and the temperature of the cadmium source is controlled within a proper temperature range. And (3) monitoring the seed crystal temperature monitoring point 7 in real time by adopting a thermocouple, integrally adopting a multistep sectional heating mode, preserving heat for 24 hours at the temperature of 10-20 ℃ lower than a target growth temperature field, observing the temperature of the temperature monitoring point 7, ensuring that the seed crystal above a supporting point of a seeding area is not melted, and controlling the temperature above the supporting point of the seed crystal to be 1096-1100 ℃ by adopting a reasonable and slow heating mode. Keeping the temperature for 20-48 hours, ensuring that polycrystalline grains below the seed crystal are fully melted, starting crystal growth, adopting a vertical gradient solidification (VGF) from top to bottom in a crystal growth mode, reducing the temperature at 0.1-1 ℃/h (the actual growth rate of the cadmium zinc telluride crystal is 0.1-0.8 mm/h), reducing the overall growth time to 400-800 h, reducing the temperature of the cadmium zinc telluride growth temperature control area 5 to 800-850 ℃ after the growth is finished for 5-15 h, maintaining the Cd temperature at 750-850 ℃ in the Cd source temperature control area, carrying out in-situ annealing for 72-144 h, and reducing the temperature of the Cd source temperature control area and the overall cadmium zinc telluride growth temperature control area 5 to the room temperature at the rate of 5-10 ℃/h.
As an optimized solution of the embodiment of the present invention, before the step S1, the inner wall of the first ampoule 1 is plated with a carbon film, and then a cadmium zinc telluride polycrystal material is loaded.
As an optimized solution of the embodiment of the present invention, in the step S3, the solidification process is as follows: firstly, heating the growth furnace to a target temperature field, wherein the temperature range of a high-temperature area is 1120-1140 ℃, and the temperature range of a low-temperature area is 1040-1100 ℃; then, the first ampoule 1 is subjected to heat preservation in the high-temperature area for 24-48 hours; and starting vertical gradient solidification growth after the tellurium-zinc-cadmium polycrystal material is fully melted. In the embodiment, the temperature is raised to the target temperature field for 18-24 hours, and finally the polycrystalline grains are fully melted and cooled for 10-48 hours.
Referring to fig. 4, an embodiment of the invention provides a cadmium zinc telluride crystal growth apparatus, which includes a first ampoule 1 and a third ampoule 3 for placing the first ampoule 1 therein, wherein a material supplement region 10, a seeding region 11 and a growth region 12 are sequentially distributed on the first ampoule 1 from top to bottom, and cadmium metal 30 is disposed in the third ampoule 3. In the embodiment, the growth method adopts a vertical gradient solidification method to finish the growth of the cadmium zinc telluride from top to bottom, and the solid-liquid state of the cadmium zinc telluride can be effectively controlled in the growth processThe partial pressure of cadmium at the interface reduces the creation of a microprecipitated phase. Specifically, three quartz ampoules are used in the whole growth process, and for convenience of description, the three quartz ampoules are respectively defined as a first ampoule 1, a second ampoule 2 and a third ampoule 3, wherein the first ampoule 1 is an ampoule for crystal growth, the structure of the first ampoule ensures the growth sequence from top to bottom, the partial pressure of cadmium at a cadmium zinc telluride solid-liquid interface can be effectively controlled compared with the growth from bottom to top in the prior art, the first ampoule 1 can be seen as three sections, wherein the section positioned at the top is a material supplement area 10, the structure of the area is wide, a certain mass of material can be contained, and the middle section is a seeding area 11 which is a narrow section and is used for guiding crystals to a growth area 12 at the bottom section. In the process of growing, the actions of putting in and taking out and putting in a first ampoule 1 are involved, wherein fig. 2 shows the situation that the first ampoule 1 is put in a second ampoule 2, wherein the growth area 12 of the first ampoule 1 is filled with broken tellurium, zinc and cadmium, the gaps among multiple grains are reduced as much as possible in the process of charging, the proper mass range of tellurium, zinc and cadmium to be filled is calculated according to the cavity volume of the first ampoule 1 in the process of charging, and the later-stage polycrystalline material is ensured to be in the position of a seed crystal bag after being solidified; fig. 3 shows the situation that the first ampoule 1 is taken out of the second ampoule 2 and put into the third ampoule 3, wherein the growth area 12 of the first ampoule 1 is molten and solidified cadmium zinc telluride. Preferably, first ampoule 1 is placed in second ampoule 2 and sealed by using quartz stopper 8, and then sealed under vacuum of less than 5 × 10-5And (pa) carrying out oxyhydrogen flame vacuum tube sealing. Preferably, after a certain amount of high purity Cd is placed in third ampoule 3, a quartz stopper 8 for sealing the tube is placed under a vacuum of less than 5X 10-5And (pa) carrying out oxyhydrogen flame vacuum tube sealing.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (10)

1. A tellurium-zinc-cadmium crystal growth method is characterized by comprising the following steps:
s1, selecting a first ampoule with a material supplement area, a seeding area and a growth area distributed in sequence from top to bottom, and filling the tellurium-zinc-cadmium polycrystalline material into the material supplement area of the first ampoule;
s2, packaging the ampoule filled with the tellurium-zinc-cadmium polycrystal material into a second ampoule;
s3, carrying out a solidification process after packaging, so that the growth region and part of the seeding region are filled with the tellurium-zinc-cadmium polycrystal material;
and S4, taking the first ampoule out of the second ampoule, and putting the first ampoule into a third ampoule for packaging, wherein the third ampoule is provided with cadmium metal.
2. The method of growing a cadmium zinc telluride crystal as set forth in claim 1 wherein: before the first ampoule is placed into the third ampoule between the step S3 and the step S4, the second ampoule is opened, the first ampoule is taken out, a cadmium zinc telluride seed crystal with a specific crystal orientation is arranged in the crystal guiding area of the first ampoule, and then the first ampoule is placed into the third ampoule.
3. The method of growing a cadmium zinc telluride crystal as set forth in claim 2 wherein: and support points for supporting the tellurium-zinc-cadmium seed crystals with the specific crystal orientation are distributed in the seeding area, and the area below the support points of the seeding area is filled with the tellurium-zinc-cadmium polycrystal material.
4. The method for growing a cadmium zinc telluride crystal as claimed in claim 2, wherein the method for loading the cadmium zinc telluride seed crystal with the specific crystal orientation specifically comprises the following steps:
selecting cadmium zinc telluride with specific crystal orientation;
carrying out coarse grinding and fine grinding processes on the cadmium zinc telluride until the cadmium zinc telluride reaches the size matched with the inner diameter of the seeding area;
then, carrying out ultrasonic cleaning by absolute ethyl alcohol and carrying out bromomethanol corrosion;
then blowing the crystal to dry by adopting nitrogen and then loading the crystal into the crystal leading area.
5. The method of growing a cadmium zinc telluride crystal as set forth in claim 1 wherein: and setting a temperature control area outside the third ampoule, wherein the position of the metal cadmium is a cadmium source temperature control area, and the area of the first ampoule is a cadmium zinc telluride growth temperature control area.
6. The method of growing a cadmium zinc telluride crystal as set forth in claim 5 wherein: the cadmium source temperature control area is arranged above the cadmium zinc telluride growth temperature control area.
7. The method of growing a cadmium zinc telluride crystal as set forth in claim 5 wherein: the control temperature range of the cadmium source temperature control region is 700-1040 ℃ from top to bottom, and the initial temperature distribution range of the cadmium zinc telluride growth temperature control region is 1040-1140 ℃ from top to bottom.
8. The method of growing a cadmium zinc telluride crystal as set forth in claim 1 wherein: before the step S1, the inner wall of the first ampoule is coated with a carbon film.
9. The cadmium zinc telluride crystal growth method of claim 1 wherein in said step S3, the solidification process is as follows:
firstly, heating the growth furnace to a target temperature field, wherein the temperature range of a high-temperature area is 1120-1140 ℃, and the temperature range of a low-temperature area is 1040-1100 ℃;
then, the first ampoule is subjected to heat preservation in the high-temperature area for 24-48 hours;
and starting vertical gradient solidification growth after the tellurium-zinc-cadmium polycrystal material is fully melted.
10. A tellurium-zinc-cadmium crystal growth device is characterized in that: the material supplementing and seeding device comprises a first ampoule and a third ampoule for placing the first ampoule in, wherein a material supplementing area, a seeding area and a growing area are sequentially distributed on the first ampoule from top to bottom, and metal cadmium is arranged in the third ampoule.
CN202011486859.XA 2020-12-16 2020-12-16 Cadmium zinc telluride crystal growth method and device Pending CN112647133A (en)

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Inventor after: Huang Li

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Application publication date: 20210413