JPH05310494A - Growth of single crystal - Google Patents
Growth of single crystalInfo
- Publication number
- JPH05310494A JPH05310494A JP4146501A JP14650192A JPH05310494A JP H05310494 A JPH05310494 A JP H05310494A JP 4146501 A JP4146501 A JP 4146501A JP 14650192 A JP14650192 A JP 14650192A JP H05310494 A JPH05310494 A JP H05310494A
- Authority
- JP
- Japan
- Prior art keywords
- mole number
- raw material
- crystal
- cdte
- seed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＣｄＴｅ等の単結晶を
育成する方法に関するものである。FIELD OF THE INVENTION The present invention relates to a method for growing a single crystal such as CdTe.
【０００２】[0002]
【従来の技術】従来、ＣｄＴｅ結晶を育成した例として
は、SOLID STATE TECHNOLOGY (June 1990,83-86 「文献
１」）、Jornal of Crystal Growth 70 (1984,379-385
「文献２」）、特開昭62-288193 号公報「文献３」に示
すものがある。文献１には、ＶＢ（垂直ブリッジマン
法）によるＣｄＴｅ結晶育成が示されている。又、同２
には、ＣｄＴｅ原料とＢ2 Ｏ3 をルツボ中に入れ、加
熱，溶融されたＣｄＴｅ融液に種結晶を浸漬して結晶を
引き上げる、いわゆるＬＥＣ法（液体封止チョクラルス
キー法）によるＣｄＴｅ結晶の育成方法が示されてい
る。更に、同３には、同様の方法でルツボ内に成形体を
入れ、形状制御しながらＣｄＴｅ結晶を育成する方法が
示されている。2. Description of the Related Art Conventionally, examples of growing CdTe crystals include SOLID STATE TECHNOLOGY (June 1990, 83-86 "Reference 1"), Journal of Crystal Growth 70 (1984, 379-385).
"Reference 2") and JP-A-62-288193, "Reference 3". Reference 1 shows CdTe crystal growth by VB (vertical Bridgman method). Also, the same 2
CdTe crystal by the so-called LEC method (liquid-encapsulated Czochralski method) in which a CdTe raw material and B 2 O 3 are put in a crucible, and a seed crystal is immersed in a heated and melted CdTe melt to pull up the crystal. The training method of is shown. Further, the same article 3 discloses a method in which a compact is put in a crucible and a CdTe crystal is grown while controlling the shape by the same method.
【０００３】[0003]
【発明が解決しようとする課題】しかし、前記の従来方
法では、種結晶を使用して育成しても、種付け直下で多
結晶化するため、ＣｄＴｅ結晶を単結晶化することが非
常に難しかった。本発明は、このような技術的背景のも
とになされたものであって、その目的は、種付け直下で
の多結晶化を防止し、単結晶を育成する方法を提供する
ことにある。However, in the above-mentioned conventional method, even if a seed crystal is grown, it is polycrystallized immediately under seeding, so that it is very difficult to single-crystallize a CdTe crystal. .. The present invention has been made under such a technical background, and an object thereof is to provide a method for preventing polycrystallization immediately under seeding and growing a single crystal.
【０００４】[0004]
【課題を解決するための手段】前記の目的を達成するた
めに、本発明育成方法は、加熱，溶融されたＣｄＴｅ原
料融液に、ＣｄＴｅ種結晶を浸漬し、ＣｄＴｅ単結晶を
育成する方法において、前記ＣｄＴｅ原料融液の組成
が、−０．０１＜（Ｃｄモル数−Ｔｅモル数）／Ｔｅモ
ル数＜０．０１を満たし、かつ前記種結晶の方位が、＜
１１１＞方向から１０度以内であることを特徴とする。In order to achieve the above object, the growth method of the present invention is a method for growing a CdTe single crystal by immersing a CdTe seed crystal in a heated and melted CdTe raw material melt. The composition of the CdTe raw material melt satisfies −0.01 <(Cd mole number−Te mole number) / Te mole number <0.01, and the orientation of the seed crystal is <
It is characterized in that it is within 10 degrees from the 111> direction.
【０００５】又、このような育成方法において、の原料
融液及び／又は種結晶に、Ｉｎ，Ｍｎ，Ｇａ，Ａｓ，Ｃ
ｌ，Ａｌから選択された１種以上をドーピングしたこと
を特徴とする。Further, in such a growing method, In, Mn, Ga, As, C are added to the raw material melt and / or the seed crystal.
It is characterized in that at least one selected from l and Al is doped.
【０００６】又、周期律表ＩＩ族（Ｃｄ，Ｚｎ，Ｈｇ）
及びＶＩ族（Ｔｅ，Ｓｅ，Ｓ）元素から選ばれた３種以
上を含むＩＩ−ＶＩ族混晶化合物半導体材料を加熱，溶
融した原料融液に、この原料融液とほぼ同一組成の種結
晶を浸漬し、ＩＩ−ＶＩ族混晶化合物半導体の単結晶を
育成する方法において、前記原料融液の組成が、−０．
０１＜（ＩＩ族元素モル数−ＶＩ族元素モル数）／ＶＩ
族元素モル数＜０．０１を満たし、かつ前記種結晶の方
位が、＜１１１＞方向から１０度以内であることを特徴
とする。Further, Group II (Cd, Zn, Hg) of the periodic table
And a II-VI mixed crystal compound semiconductor material containing three or more elements selected from Group VI (Te, Se, S) elements is heated and melted into a raw material melt, and a seed crystal having substantially the same composition as the raw material melt In the method of growing a single crystal of a II-VI mixed crystal compound semiconductor, the composition of the raw material melt is −0.
01 <(group II element mole number-VI group element mole number) / VI
The group element mol number <0.01 is satisfied, and the orientation of the seed crystal is within 10 degrees from the <111> direction.
【０００７】更に、このような育成方法において、原料
融液及び／又は種結晶に、Ｉｎ，Ｍｎ，Ｇａ，Ａｓ，Ｃ
ｌ，Ａｌから選択された１種以上をドーピングしたこと
を特徴とする。Further, in such a growing method, In, Mn, Ga, As, C are added to the raw material melt and / or the seed crystal.
It is characterized in that at least one selected from l and Al is doped.
【０００８】[0008]
【作用】前記のように原料融液の組成と種結晶の方位を
限定することによって、種結晶と原料融液のなじみがよ
くなり、種付け直下での多結晶化を防止することができ
る。又、ＩＩ−ＶＩ族混晶化合物半導体の単結晶を育成
する場合も、同様に原料融液の組成と種結晶の方位を限
定することによって、種結晶と原料融液のなじみがよく
なり、種付け直下での多結晶化を防止することができ
る。従って、種結晶から良質の単結晶を育成することが
できる。As described above, by limiting the composition of the raw material melt and the orientation of the seed crystal, the seed crystal and the raw material melt become well compatible with each other, and polycrystallization just under seeding can be prevented. Also, in the case of growing a single crystal of a II-VI mixed crystal compound semiconductor, by similarly limiting the composition of the raw material melt and the orientation of the seed crystal, the familiarity between the seed crystal and the raw material melt is improved, and seeding is performed. Polycrystallization immediately below can be prevented. Therefore, a good quality single crystal can be grown from the seed crystal.
【０００９】[0009]
（実施例１）ＬＥＣ法により、＜１１１＞方向のＣｄＴ
ｅ単結晶の育成を行った。４インチ径の石英ルツボに、
０＜（Ｃｄモル数−Ｔｅモル数）／Ｔｅモル数＜０．０
１で合成された１２００ｇのＣｄＴｅ原料と、２００ｇ
のＢ2 Ｏ3 を投入し、種結晶には、＜１１１＞（方位精
度±２ｄｅｇ）を使用した。温度分布は、縦方向温度勾
配１５０℃／ｃｍ、径方向温度勾配５０℃／ｃｍであっ
た。又、引き上げ速度は、５ｍｍ／Ｈで育成した。(Example 1) CdT in <111> direction by LEC method
e Single crystal was grown. For a 4 inch diameter quartz crucible,
0 <(Cd mole number-Te mole number) / Te mole number <0.0
1200g of CdTe raw material synthesized in 1 and 200g
B 2 O 3 was added and <111> (orientation accuracy ± 2 deg) was used as the seed crystal. The temperature distribution had a longitudinal temperature gradient of 150 ° C./cm and a radial temperature gradient of 50 ° C./cm. The pulling rate was 5 mm / H.
【００１０】その結果、育成できた結晶は、直径３０ｍ
ｍ、長さ４０ｍｍの単結晶であった。尚、育成中の原料
からのＣｄ蒸発量は、３ｇで、育成中の組成は、−０．
０１＜（Ｃｄモル数−Ｔｅモル数）／Ｔｅモル数＜０．
０１を満たしていた。As a result, the grown crystal has a diameter of 30 m.
It was a single crystal with m and a length of 40 mm. The amount of Cd evaporated from the raw material during the growth was 3 g, and the composition during the growth was −0.
01 <(Cd mole number-Te mole number) / Te mole number <0.
It satisfied 01.
【００１１】一方、育成中の組成が、−０．０４＜（Ｃ
ｄモル数−Ｔｅモル数）／Ｔｅモル数＜−０．０１又
は、０．０１＜（Ｃｄモル数−Ｔｅモル数）／Ｔｅモル
数＜−０．０４とずれたとき、或は種結晶の方位が、＜
１１１＞から１０ｄｅｇ以上ずれたときは種結晶の直下
で多結晶化し、単結晶化することが全くできなかった。On the other hand, the composition during the growth is -0.04 <(C
d mole number-Te mole number) / Te mole number <-0.01 or 0.01 <(Cd mole number-Te mole number) / Te mole number <-0.04, or seed crystal Direction of <
When it deviated from 111> by 10 deg or more, polycrystallization occurred just below the seed crystal, and single crystallization could not be performed at all.
【００１２】（実施例２）ＶＢ法により、＜１１１＞方
向のＣｄＺｎＴｅ単結晶の育成を行った。内面をカーボ
ンコートされた２インチ径の石英管に、０＜（ＩＩ族元
素モル数−ＶＩ族元素モル数）／ＶＩ族元素モル数＜
０．０１の精度でＣｄ，Ｚｎ，Ｔｅの各原料を、モル比
０．９６：０．０４：１で全量１０００ｇ封入し、種結
晶には、ほぼ同組成の＜１１１＞（方位精度±２ｄｅ
ｇ）を使用した。温度分布は、縦方向温度勾配５０℃／
ｃｍ、又、成長速度は４ｍｍ／Ｈで育成した。Example 2 A CdZnTe single crystal in the <111> direction was grown by the VB method. In a quartz tube having a diameter of 2 inches and having an inner surface coated with carbon, 0 <(mol number of II group element-mol number of VI group element) / mol number of VI group element <
With a precision of 0.01, 1000 g of each raw material of Cd, Zn, and Te was enclosed at a molar ratio of 0.96: 0.04: 1, and the seed crystal had a composition of <111> (orientation accuracy ± 2 de
g) was used. The temperature distribution has a vertical temperature gradient of 50 ° C /
cm, and the growth rate was 4 mm / H.
【００１３】その結果、育成できた結晶は、直径５０ｍ
ｍ、長さ５０ｍｍの単結晶であった。尚、育成中の原料
からのＣｄ蒸発量は殆どなく、育成中の組成は、０＜
（ＩＩ族元素モル数−ＶＩ族元素モル数）／ＶＩ族元素
モル数＜０．０１を満たしていた。As a result, the grown crystal has a diameter of 50 m.
It was a single crystal of m and 50 mm in length. There is almost no evaporation of Cd from the raw material during the growth, and the composition during the growth is 0 <
(Group II element mole number-VI group element mole number) / VI group element mole number <0.01.
【００１４】一方、育成中の組成が、−０．０４＜（Ｉ
Ｉ族元素モル数−ＶＩ族元素モル数）／ＶＩ族元素モル
数＜−０．０１又は、０．０１＜（ＩＩ族元素モル数−
ＶＩ族元素モル数）／ＶＩ族元素モル数＜０．０４とず
れたとき、或は種結晶の方位が、＜１１１＞から１０ｄ
ｅｇ以上ずれたときは種結晶の直下で多結晶化し、単結
晶化することが全くできなかった。On the other hand, the composition during the growth is -0.04 <(I
Group I element mole number-Group VI element mole number) / Group VI element mole number <-0.01 or 0.01 <(Group II element mole number-
(VI group element mole number) / VI group element mole number <0.04, or the orientation of the seed crystal is from <111> to 10d.
When it was deviated by more than eg, polycrystal was formed just below the seed crystal and single crystal could not be formed at all.
【００１５】（実施例３）ＬＥＣ法により、Ａｌドープ
された＜１１１＞方向のＣｄＴｅ単結晶の育成を行っ
た。４インチ径の石英ルツボに、０＜（Ｃｄモル数−Ｔ
ｅモル数）／Ｔｅモル数＜０．０１で合成された１２０
０ｇのＣｄＴｅ原料と０．１ｇのＡｌ、２００ｇのＢ2
Ｏ3 を投入し、種結晶には、＜１１１＞Ｂ（方位精度±
２ｄｅｇ）を使用した。温度分布は、縦方向温度勾配１
５０℃／ｃｍ、径方向温度勾配５０℃／ｃｍであった。
又、引き上げ速度は、４ｍｍ／Ｈで育成した。Example 3 An Al-doped <111> -oriented CdTe single crystal was grown by the LEC method. In a 4 inch diameter quartz crucible, 0 <(Cd mole number-T
e moles) / Te moles <0.01 synthesized 120
0 g of CdTe raw material, 0.1 g of Al, 200 g of B 2
O 3 was added, and the seed crystal was <111> B (orientation accuracy ±
2 deg) was used. Temperature distribution is vertical temperature gradient 1
The temperature gradient was 50 ° C./cm and the radial temperature gradient was 50 ° C./cm.
The pulling rate was 4 mm / H.
【００１６】その結果、育成できた結晶は、直径３０ｍ
ｍ、長さ３０ｍｍの単結晶であった。尚、育成中の原料
からのＣｄ蒸発量は、２ｇで、育成中の組成は、−０．
０１＜（Ｃｄモル数−Ｔｅモル数）／Ｔｅモル数＜０．
０１を満たしていた。As a result, the grown crystal has a diameter of 30 m.
It was a single crystal with m and a length of 30 mm. The amount of Cd evaporated from the raw material during the growth was 2 g, and the composition during the growth was −0.
01 <(Cd mole number-Te mole number) / Te mole number <0.
It satisfied 01.
【００１７】一方、育成中の組成が、−０．０４＜（Ｃ
ｄモル数−Ｔｅモル数）／Ｔｅモル数＜−０．０１又
は、０．０１＜（Ｃｄモル数−Ｔｅモル数）／Ｔｅモル
数＜−０．０４とずれたとき、或は種結晶の方位が、＜
１１１＞から１０ｄｅｇ以上ずれたときは種結晶の直下
で多結晶化し、単結晶化することが全くできなかった。On the other hand, the composition during the growth is -0.04 <(C
d mole number-Te mole number) / Te mole number <-0.01 or 0.01 <(Cd mole number-Te mole number) / Te mole number <-0.04, or seed crystal Direction of <
When it deviated from 111> by 10 deg or more, polycrystallization occurred just below the seed crystal, and single crystallization could not be performed at all.
【００１８】（実施例４）ＶＢ法により、Ｉｎドープさ
れた＜１１１＞方向のＣｄＺｎＳｅＴｅ単結晶の育成を
行った。内面をカーボンコートされた２インチ径の石英
管に、０＜（ＩＩ族元素モル数−ＶＩ族元素モル数）／
ＶＩ族元素モル数＜０．０１の精度でＣｄ，Ｚｎ，Ｓ
ｅ，Ｔｅの各原料を、モル比０．０９：０．０１：０．
０３：０．９７で全量１０００ｇ封入し、種結晶には、
ほぼ同組成の＜１１１＞（方位精度±２ｄｅｇ）を使用
した。温度分布は、縦方向温度勾配５０℃／ｃｍ、又、
成長速度は２ｍｍ／Ｈで育成した。Example 4 An In-doped <111> -oriented CdZnSeTe single crystal was grown by the VB method. In a quartz tube having a diameter of 2 inches, the inner surface of which is coated with carbon, 0 <(group II element mole number-VI group element mole number) /
Cd, Zn, S with accuracy of group VI element mol number <0.01
e, Te starting materials in a molar ratio of 0.09: 0.01: 0.
The total amount of 1000 g was enclosed at 03: 0.97, and the seed crystal was
<111> (orientation accuracy ± 2 deg) having almost the same composition was used. The temperature distribution has a vertical temperature gradient of 50 ° C / cm,
The growth rate was 2 mm / H.
【００１９】その結果、育成できた結晶は、直径５０ｍ
ｍ、長さ４０ｍｍの単結晶であった。尚、育成中の原料
からのＣｄ蒸発量は殆どなく、育成中の組成は、０＜
（ＩＩ族元素モル数−ＶＩ族元素モル数）／ＶＩ族元素
モル数＜０．０１を満たしていた。As a result, the grown crystal has a diameter of 50 m.
It was a single crystal with m and a length of 40 mm. There is almost no evaporation of Cd from the raw material during the growth, and the composition during the growth is 0 <
(Group II element mole number-VI group element mole number) / VI group element mole number <0.01.
【００２０】一方、育成中の組成が、−０．０４＜（Ｉ
Ｉ族元素モル数−ＶＩ族元素モル数）／ＶＩ族元素モル
数＜−０．０１又は、０．０１＜（ＩＩ族元素モル数−
ＶＩ族元素モル数）／ＶＩ族元素モル数＜０．０４とず
れたとき、或は種結晶の方位が、＜１１１＞から１０ｄ
ｅｇ以上ずれたときは種結晶の直下で多結晶化し、単結
晶化することが全くできなかった。On the other hand, the composition during the growth is -0.04 <(I
Group I element mole number-Group VI element mole number) / Group VI element mole number <-0.01 or 0.01 <(Group II element mole number-
(VI group element mole number) / VI group element mole number <0.04, or the orientation of the seed crystal is from <111> to 10d.
When it was deviated by more than eg, polycrystal was formed just below the seed crystal and single crystal could not be formed at all.
【００２１】[0021]
【発明の効果】以上説明したように、本発明方法によれ
ば、ＣｄＴｅ結晶又はＩＩ−ＶＩ族混晶化合物半導体結
晶を育成する場合において、育成中の原料融液の組成と
単結晶方位を限定することによって、種結晶と原料融液
のなじみを向上させることができる。従って、種付け直
下の多結晶化を防止することができ、種結晶から大型の
単結晶を得ることができる。As described above, according to the method of the present invention, when growing a CdTe crystal or a II-VI mixed crystal compound semiconductor crystal, the composition and single crystal orientation of the raw material melt during growth are limited. By doing so, the familiarity between the seed crystal and the raw material melt can be improved. Therefore, it is possible to prevent polycrystallization just below the seeding, and to obtain a large single crystal from the seed crystal.
Claims (4)
ＣｄＴｅ種結晶を浸漬し、ＣｄＴｅ単結晶を育成する方
法において、前記ＣｄＴｅ原料融液の組成が、−０．０
１＜（Ｃｄモル数−Ｔｅモル数）／Ｔｅモル数＜０．０
１を満たし、かつ前記種結晶の方位が、＜１１１＞方向
から１０度以内であることを特徴とする単結晶の育成方
法。1. A CdTe raw material melt which is heated and melted,
In the method of immersing a CdTe seed crystal and growing a CdTe single crystal, the composition of the CdTe raw material melt is -0.0.
1 <(mol of Cd-mol of Te) / mol of Te <0.0
1, and the orientation of the seed crystal is within 10 degrees from the <111> direction.
ｎ，Ｇａ，Ａｓ，Ｃｌ，Ａｌから選択された１種以上を
ドーピングしたことを特徴とする請求項１記載の単結晶
の育成方法。2. A raw material melt and / or seed crystal is provided with In, M
The method for growing a single crystal according to claim 1, wherein at least one selected from n, Ga, As, Cl and Al is doped.
びＶＩ族（Ｔｅ，Ｓｅ，Ｓ）元素から選ばれた３種以上
を含むＩＩ−ＶＩ族混晶化合物半導体材料を加熱，溶融
した原料融液に、この原料融液とほぼ同一組成の種結晶
を浸漬し、ＩＩ−ＶＩ族混晶化合物半導体の単結晶を育
成する方法において、前記原料融液の組成が、−０．０
１＜（ＩＩ族元素モル数−ＶＩ族元素モル数）／ＶＩ族
元素モル数＜０．０１を満たし、かつ前記種結晶の方位
が、＜１１１＞方向から１０度以内であることを特徴と
する単結晶の育成方法。3. A II-VI mixed crystal compound semiconductor material containing three or more elements selected from Group II (Cd, Zn, Hg) and Group VI (Te, Se, S) elements of the periodic table is heated and melted. In the method of growing a single crystal of a II-VI mixed crystal compound semiconductor by immersing a seed crystal having substantially the same composition as that of the raw material melt in the prepared raw material melt, the composition of the raw material melt is -0.0.
1 <(group II element mole number-VI group element mole number) / VI group element mole number <0.01, and the orientation of the seed crystal is within 10 degrees from the <111> direction. Method for growing a single crystal.
ｎ，Ｇａ，Ａｓ，Ｃｌ，Ａｌから選択された１種以上を
ドーピングしたことを特徴とする請求項３記載の単結晶
の育成方法。4. The raw material melt and / or seed crystal is provided with In, M
The method for growing a single crystal according to claim 3, wherein at least one selected from n, Ga, As, Cl and Al is doped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14650192A JP3196182B2 (en) | 1992-05-11 | 1992-05-11 | Single crystal growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14650192A JP3196182B2 (en) | 1992-05-11 | 1992-05-11 | Single crystal growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05310494A true JPH05310494A (en) | 1993-11-22 |
| JP3196182B2 JP3196182B2 (en) | 2001-08-06 |
Family
ID=15409060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14650192A Expired - Fee Related JP3196182B2 (en) | 1992-05-11 | 1992-05-11 | Single crystal growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3196182B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996015297A1 (en) * | 1994-11-11 | 1996-05-23 | Japan Energy Corporation | Process for bulk crystal growth |
| GB2308356A (en) * | 1995-12-19 | 1997-06-25 | Heatvision Technics Corp | Processing complex semiconductors |
| CN116536768A (en) * | 2023-06-29 | 2023-08-04 | 浙江珏芯微电子有限公司 | Crucible for growth of tellurium-zinc-cadmium monocrystal and growth method |
-
1992
- 1992-05-11 JP JP14650192A patent/JP3196182B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996015297A1 (en) * | 1994-11-11 | 1996-05-23 | Japan Energy Corporation | Process for bulk crystal growth |
| US5871580A (en) * | 1994-11-11 | 1999-02-16 | Japan Energy Corporation | Method of growing a bulk crystal |
| GB2308356A (en) * | 1995-12-19 | 1997-06-25 | Heatvision Technics Corp | Processing complex semiconductors |
| CN116536768A (en) * | 2023-06-29 | 2023-08-04 | 浙江珏芯微电子有限公司 | Crucible for growth of tellurium-zinc-cadmium monocrystal and growth method |
| CN116536768B (en) * | 2023-06-29 | 2023-09-29 | 浙江珏芯微电子有限公司 | Crucible for growth of tellurium-zinc-cadmium monocrystal and growth method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3196182B2 (en) | 2001-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101451995B1 (en) | Process for producing ZnO single crystal according to method of liquid phase growth | |
| WO2004106597A1 (en) | Indium phosphide substrate, indium phosphide single crystal and process for producing them | |
| US4315796A (en) | Crystal growth of compound semiconductor mixed crystals under controlled vapor pressure | |
| JPS6345198A (en) | Production of crystal of multiple system | |
| US5728212A (en) | Method of preparing compound semiconductor crystal | |
| JPH05310494A (en) | Growth of single crystal | |
| JPH10167898A (en) | Production of semi-insulative gaas single crystal | |
| US3494730A (en) | Process for producing cadmium telluride crystal | |
| JPH01122998A (en) | Production of cd zn te mixed crystal semiconductor | |
| JP3818023B2 (en) | Method for producing GaAs single crystal | |
| JP3216298B2 (en) | Vertical container for compound semiconductor crystal growth | |
| US4302280A (en) | Growing gadolinium gallium garnet with calcium ions | |
| CN110036143A (en) | Monocrystalline silicon manufacturing method and silicon single crystal wafer | |
| JP2736343B2 (en) | Method for producing semi-insulating InP single crystal | |
| JPH01138199A (en) | Lead-tin-tellurium based semiconductor single crystal | |
| JPS6126591A (en) | Crystal growing method | |
| JPH04295097A (en) | Production of cadmium manganese telluride single crystal | |
| JP3443766B2 (en) | Method for synthesizing compound semiconductor polycrystal | |
| JPS6058196B2 (en) | Compound semiconductor single crystal pulling method and device | |
| JP2922039B2 (en) | Single crystal growth method | |
| RU1431391C (en) | Process of growing monocrystals of cadmium telluride | |
| JP2582318B2 (en) | Method for manufacturing compound semiconductor single crystal | |
| JP3633212B2 (en) | Single crystal growth method | |
| JPH07206577A (en) | Process for growing rare earth-gallium-perovskite single crystal | |
| JPH0476328B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080608 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090608 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090608 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100608 Year of fee payment: 9 |
|
| LAPS | Cancellation because of no payment of annual fees |