KR930018647A - Doping Method and As Pressure Control Method in GaAs Crystal Production by Vertical Temperature Gradient Reduction Method - Google Patents

Doping Method and As Pressure Control Method in GaAs Crystal Production by Vertical Temperature Gradient Reduction Method Download PDF

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KR930018647A
KR930018647A KR1019920002116A KR920002116A KR930018647A KR 930018647 A KR930018647 A KR 930018647A KR 1019920002116 A KR1019920002116 A KR 1019920002116A KR 920002116 A KR920002116 A KR 920002116A KR 930018647 A KR930018647 A KR 930018647A
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South Korea
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gaas
doping
stoichiometric ratio
pressure
temperature gradient
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KR1019920002116A
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Korean (ko)
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KR950008847B1 (en
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고한준
신기철
노용정
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박원근
금성전선 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 수직온도구배감소법에 의한 GaAs단결정 제조시 n형 p형의 물성을 갖게 하기 위하여 Si과 Zn을 도우핑 하는 방법과, As압력제어부가 없는 2-온도법에서 도우핑에 따른 As압력 변화를 해결하여, GaAs의 화학양론비를 조절하는 방법에 관한 것으로서, 예비합성된 다결정 GaAs의 화학양론비를 조절로 앰푸을 내부의 적정량의 As압력을 제어하거나, 또는 GaAs용융점(1238℃)에서 As를 이상기체로 취급하여 PV=nRT 식에서 구한 적정량의 As양을 첨가하는 단계와, Si이나 Zn을 도우핑하는 경우에, 도우핑 원소를 다결정 합성시 첨가하는단계와, 도우핑되지 않은 다결정 합성관는 다른 용융물의 화학양론비를 갖는 조건으로 다결정을 합성하여 As압력을 제어하는 단계들로 이루어지는 것을 특징으로 하며, 본 발명의 방법에 의하여 GaAs의 화학양론비를 조절할 수 있는 효과를 얻는다.The present invention provides a method of doping Si and Zn in order to have n-type p-type physical properties when manufacturing GaAs single crystal by vertical temperature gradient reduction method, and As pressure according to doping in 2-temperature method without As pressure control part. The present invention relates to a method of adjusting the stoichiometric ratio of GaAs by resolving the change, and controlling the stoichiometric ratio of presynthesized polycrystalline GaAs to control an appropriate amount of As pressure inside the ampoule, or at a GaAs melting point (1238 ° C.). Treating As as an ideal gas, adding an appropriate amount of As obtained from the PV = nRT equation, adding doping elements to polycrystalline synthesis when doping Si or Zn, and undoping polycrystalline synthesis The tube is characterized by consisting of the steps of controlling the As pressure by synthesizing the polycrystals under conditions having a stoichiometric ratio of the different melt, the stoichiometric ratio of GaAs can be adjusted by the method of the present invention And to obtain a.

Description

수직온도구배 감소법에 의한 GaAs결정 제조시 도우핑 방법 및 As압력조절 방법.Doping Method and As Pressure Control Method in GaAs Crystal Production by Vertical Temperature Gradient Reduction Method.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

도면은 전기로의 측방향온도 구배와 온도가 ①②③으로 변화함에 따른 단결정의 진행을 나타내는 그래프이다.The drawing shows that the lateral temperature gradient and temperature of the electric furnace are ① ② This graph shows the progress of single crystal as it changes to ③.

Claims (2)

예비합성된 다결정 GaAs의 화학양론비 조절로 앰푸울 내부의 적정량의 As압력을 제어하거나, 또는 GaAs용융점(1238℃)에서 As를 이상기체로 취급하여 PV=nRT 식에서 구한 적정량의 As양을 첨가하고, Si이나 Zn을 도우핑하는 경우에 도우핑 원소를 다결정 합성시 첨가하고 나서, 도우핑 되지 암은 다결정합성과는 다른 용융물의 화학 양론비를갖는 조건으로 다결정을 합성하여, As압력을 제어하는단계들로 이루어지는 수직온도구배 감소법에 의한 GaAs결정 제조시 도우핑 방법 및 As압력조절방법.By controlling the stoichiometry of the presynthesized polycrystalline GaAs, the appropriate amount of As pressure in the ampoules is controlled or As is treated as an ideal gas at the melting point of GaAs (1238 ℃), and the appropriate amount of As obtained from PV = nRT equation is added. In the case of doping Si or Zn, a doping element is added during polycrystal synthesis, and then the undoped arm synthesizes the polycrystal under conditions having a stoichiometric ratio of the melt different from that of the polycrystal, thereby controlling the As pressure. A doping method and an As pressure control method in the manufacture of GaAs crystals by a vertical temperature gradient reduction method comprising steps. 예비 합성된 다결정 GaAs의 화학양론비 조절로앰푸울 내부의 적정량의 As압력을 제어하거나, 또는 GaAs용융점(1238℃)에서 As를 이상기체로 취급하여 PV=nRT 식에서 구한 적정량의 As양을 첨가하고, Si이나 Zn을 도우핑하는 경우에 10배 정도 도우핑 농고가높은 화학양론비를 조절하는 않는 다결정을 제조한 후, 단결정을 성장시킬 때 화학양론비가 맞는 도우핑 되지 않은 다결정과 혼합하는단계들로 이루어지는 수직온도구배 감소법에 의한 GaAs결정 제조시 도우핑 방법 및 As압력조절방법.Control the stoichiometric ratio of pre-synthesized polycrystalline GaAs to control the proper As pressure inside the ampoules, or treat As as an ideal gas at the melting point of GaAs (1238 ° C) and add the appropriate As amount determined by PV = nRT equation. When doping dopants, Si or Zn, do not have a high stoichiometric ratio of 10 times to prepare a polycrystal that does not control, then when growing a single crystal mixed with a non-doped polycrystalline stoichiometric ratio Doping method and As pressure control method for producing GaAs crystals by the vertical temperature gradient reduction method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920002116A 1992-02-13 1992-02-13 Gaas single crystal manufacturing method KR950008847B1 (en)

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KR1019920002116A KR950008847B1 (en) 1992-02-13 1992-02-13 Gaas single crystal manufacturing method

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Application Number Priority Date Filing Date Title
KR1019920002116A KR950008847B1 (en) 1992-02-13 1992-02-13 Gaas single crystal manufacturing method

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KR930018647A true KR930018647A (en) 1993-09-22
KR950008847B1 KR950008847B1 (en) 1995-08-08

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