JPS54128990A - Growing method for single crystal of gallium phosphide - Google Patents

Abstract

PURPOSE: To grow a high quality GaP single crystal containing a small noxious impurities and having a low dislocation density, by adding a specific rate of GaPO₄ or/and moreover Ga less than double equivalent quantity of GaPO₄, to raw material GaP and growing GaP single crystal by the liquid capsule pickup method.

CONSTITUTION: High purity, for example 99.999%, polycrystal GaP and Ga₂S₃ as donor impurity, are fed to the quartz crucible 2. 0.1W1 wt.%, especially about 0.2 wt.%, of GaPO₄ against GaP or moreover, less than double equivalent quantity, especially about 0.1 wt.%, of Ga against GaPO₄, are added. Next, B₂O₃ 4 is added on the raw material GaP added B₂O₃ 4 on the raw material GaP added the above annex and liquefied face of GaP is covered by the molten liquid layer of the B₂O₃ 4 heating by the carbon heater 5 and melting the B₂O₃ 4. Then, the pressure vessel 1 filled up rare gas, such as Ar etc., preliminary, is heated by the heater 5 and also, is kept at 50 atm. at the time of melting the raw material. Next, the seed crystal 6 is dipped in the molten liquid 3 of GaP through the layer 4 in such a condition and is pulled up rotating and then GaP single crystal having a low concentration of noxious impurities, is grown preventing polycrystal generation.

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