JPS57123898A - Preparation of semi-insulating gaas single crystal - Google Patents
Preparation of semi-insulating gaas single crystalInfo
- Publication number
- JPS57123898A JPS57123898A JP587781A JP587781A JPS57123898A JP S57123898 A JPS57123898 A JP S57123898A JP 587781 A JP587781 A JP 587781A JP 587781 A JP587781 A JP 587781A JP S57123898 A JPS57123898 A JP S57123898A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- gaas
- melt
- amount
- gaas single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prepare a semi-insulating GaAs single crystal, having a low electron trapping concentration, and suitable for a substrate in a semiconductor apparatus, by using a melt prepared by adding excess Ga in an amount in a specific range and a small amount of Cr to GaAs at a chemical equivalent ratio.
CONSTITUTION: A crucible 2 supported by a susceptor 2' is placed in a high- pressure vessel 1, and a GaAs raw material and Ga and Cr impurities to give 5W30% excess are introduced into the crucible 2 and heated by a heater 5 to form a GaAs melt 3 in excess of Ga. The amount of the Cr added is adjusted to give a Cr impurity in an amount of 0.01W5ppm in the crystal to be pulled up. A seed crystal 6 is mounted to a rotating jig 7 by using a B2O3 melt 4 as a capsule material, brought into contact with the melt 3 and then pulled up in the direction of arrow while being rotated to prepare the aimed GaAs single crystal 8. The resultant GaAs single crystal 8 obtained by this method has a resistivity ≥107Ω.cm and contains no deep electron track.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP587781A JPS57123898A (en) | 1981-01-20 | 1981-01-20 | Preparation of semi-insulating gaas single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP587781A JPS57123898A (en) | 1981-01-20 | 1981-01-20 | Preparation of semi-insulating gaas single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57123898A true JPS57123898A (en) | 1982-08-02 |
Family
ID=11623135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP587781A Pending JPS57123898A (en) | 1981-01-20 | 1981-01-20 | Preparation of semi-insulating gaas single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57123898A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59203793A (en) * | 1983-05-07 | 1984-11-17 | Agency Of Ind Science & Technol | Preparation of semiinsulative ga-as single crystal |
JPH01103995A (en) * | 1987-10-15 | 1989-04-21 | Mitsubishi Monsanto Chem Co | Iii-v compound single crystal having high specific resistance |
-
1981
- 1981-01-20 JP JP587781A patent/JPS57123898A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59203793A (en) * | 1983-05-07 | 1984-11-17 | Agency Of Ind Science & Technol | Preparation of semiinsulative ga-as single crystal |
JPH0124760B2 (en) * | 1983-05-07 | 1989-05-12 | Kogyo Gijutsuin | |
JPH01103995A (en) * | 1987-10-15 | 1989-04-21 | Mitsubishi Monsanto Chem Co | Iii-v compound single crystal having high specific resistance |
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