JPS57123898A - Preparation of semi-insulating gaas single crystal - Google Patents

Preparation of semi-insulating gaas single crystal

Info

Publication number
JPS57123898A
JPS57123898A JP587781A JP587781A JPS57123898A JP S57123898 A JPS57123898 A JP S57123898A JP 587781 A JP587781 A JP 587781A JP 587781 A JP587781 A JP 587781A JP S57123898 A JPS57123898 A JP S57123898A
Authority
JP
Japan
Prior art keywords
single crystal
gaas
melt
amount
gaas single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP587781A
Other languages
Japanese (ja)
Inventor
Yoshihiro Kokubu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP587781A priority Critical patent/JPS57123898A/en
Publication of JPS57123898A publication Critical patent/JPS57123898A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prepare a semi-insulating GaAs single crystal, having a low electron trapping concentration, and suitable for a substrate in a semiconductor apparatus, by using a melt prepared by adding excess Ga in an amount in a specific range and a small amount of Cr to GaAs at a chemical equivalent ratio.
CONSTITUTION: A crucible 2 supported by a susceptor 2' is placed in a high- pressure vessel 1, and a GaAs raw material and Ga and Cr impurities to give 5W30% excess are introduced into the crucible 2 and heated by a heater 5 to form a GaAs melt 3 in excess of Ga. The amount of the Cr added is adjusted to give a Cr impurity in an amount of 0.01W5ppm in the crystal to be pulled up. A seed crystal 6 is mounted to a rotating jig 7 by using a B2O3 melt 4 as a capsule material, brought into contact with the melt 3 and then pulled up in the direction of arrow while being rotated to prepare the aimed GaAs single crystal 8. The resultant GaAs single crystal 8 obtained by this method has a resistivity ≥107Ω.cm and contains no deep electron track.
COPYRIGHT: (C)1982,JPO&Japio
JP587781A 1981-01-20 1981-01-20 Preparation of semi-insulating gaas single crystal Pending JPS57123898A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP587781A JPS57123898A (en) 1981-01-20 1981-01-20 Preparation of semi-insulating gaas single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP587781A JPS57123898A (en) 1981-01-20 1981-01-20 Preparation of semi-insulating gaas single crystal

Publications (1)

Publication Number Publication Date
JPS57123898A true JPS57123898A (en) 1982-08-02

Family

ID=11623135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP587781A Pending JPS57123898A (en) 1981-01-20 1981-01-20 Preparation of semi-insulating gaas single crystal

Country Status (1)

Country Link
JP (1) JPS57123898A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203793A (en) * 1983-05-07 1984-11-17 Agency Of Ind Science & Technol Preparation of semiinsulative ga-as single crystal
JPH01103995A (en) * 1987-10-15 1989-04-21 Mitsubishi Monsanto Chem Co Iii-v compound single crystal having high specific resistance

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203793A (en) * 1983-05-07 1984-11-17 Agency Of Ind Science & Technol Preparation of semiinsulative ga-as single crystal
JPH0124760B2 (en) * 1983-05-07 1989-05-12 Kogyo Gijutsuin
JPH01103995A (en) * 1987-10-15 1989-04-21 Mitsubishi Monsanto Chem Co Iii-v compound single crystal having high specific resistance

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