JPS5524413A - Process of epitaxial growth for semiconductor - Google Patents

Process of epitaxial growth for semiconductor

Info

Publication number
JPS5524413A
JPS5524413A JP9623078A JP9623078A JPS5524413A JP S5524413 A JPS5524413 A JP S5524413A JP 9623078 A JP9623078 A JP 9623078A JP 9623078 A JP9623078 A JP 9623078A JP S5524413 A JPS5524413 A JP S5524413A
Authority
JP
Japan
Prior art keywords
growth
temperature
normal
substrate
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9623078A
Other languages
Japanese (ja)
Inventor
Tetsuo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9623078A priority Critical patent/JPS5524413A/en
Publication of JPS5524413A publication Critical patent/JPS5524413A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To suppress formation of substrate impurity adsorption layer and also to suppress adsorption of harmful impurity released from a holder to the substrate surface by carrying out a preheating process at low temperatures and an epitaxial growth at normal pressures.
CONSTITUTION: An Si substrate is placed on a bed in reaction tube, which is purged together with N2 gas at normal temperature and normal pressure, thereby replacing with H2 gas of normal temperature and normal pressure. The Si substrate is heated up to 1,150°C in preheating temperature, depressurized down to 70mm torr in preheating atmospheric pressure and then kept as it is for about 10 minutes. Next, the temperature is dropped as low as growth temperature and the pressure is boosted up to growth atmospheric pressure (normal temperature) to introduce SiH4. After keeping it for about 3 minutes at 1,075°C in growth temperature and 760mm torr in growth atmospheric pressure, the product is drawn out through normal temperature so dropped. According to this process, the density of impurities on the substrate and epitaxial film interface is decreased and defective crystals are not allowed to mix in. After commencement of the growth the pressure is changed normal, therefore harmful impurities like O2 and C will not be released from the holder or mixed in due to a leakage on the reaction furnace system. A superior epitaxial layer is thus obtainable.
COPYRIGHT: (C)1980,JPO&Japio
JP9623078A 1978-08-09 1978-08-09 Process of epitaxial growth for semiconductor Pending JPS5524413A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9623078A JPS5524413A (en) 1978-08-09 1978-08-09 Process of epitaxial growth for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9623078A JPS5524413A (en) 1978-08-09 1978-08-09 Process of epitaxial growth for semiconductor

Publications (1)

Publication Number Publication Date
JPS5524413A true JPS5524413A (en) 1980-02-21

Family

ID=14159416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9623078A Pending JPS5524413A (en) 1978-08-09 1978-08-09 Process of epitaxial growth for semiconductor

Country Status (1)

Country Link
JP (1) JPS5524413A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6364993A (en) * 1986-09-08 1988-03-23 Res Dev Corp Of Japan Method for growing elemental semiconductor single crystal thin film
US5064684A (en) * 1989-08-02 1991-11-12 Eastman Kodak Company Waveguides, interferometers, and methods of their formation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6364993A (en) * 1986-09-08 1988-03-23 Res Dev Corp Of Japan Method for growing elemental semiconductor single crystal thin film
US5064684A (en) * 1989-08-02 1991-11-12 Eastman Kodak Company Waveguides, interferometers, and methods of their formation

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