JPS55149191A - Manufacture of silicon carbide crystal layer - Google Patents

Manufacture of silicon carbide crystal layer

Info

Publication number
JPS55149191A
JPS55149191A JP5611879A JP5611879A JPS55149191A JP S55149191 A JPS55149191 A JP S55149191A JP 5611879 A JP5611879 A JP 5611879A JP 5611879 A JP5611879 A JP 5611879A JP S55149191 A JPS55149191 A JP S55149191A
Authority
JP
Japan
Prior art keywords
substrate
sic
layer
temp
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5611879A
Other languages
Japanese (ja)
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5611879A priority Critical patent/JPS55149191A/en
Priority to DE3002671A priority patent/DE3002671C2/en
Publication of JPS55149191A publication Critical patent/JPS55149191A/en
Priority to US06/369,911 priority patent/US4582561A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain an SiC crystal layer of high crystal perfectness through high temp. growth at the m.p. of Si or above by growing SiC on an Si substrate at the m.p. of Si or below and forming the second SiC layer on the SiC surface freed of the substrate.
CONSTITUTION: Reaction tube 22 is evacuated 32 and replaced with H2, and a surface layer of Si substrate 2 whose principal face is (111) face on sample stand 26 is removed by etching with HCl-H2 mixed gas. The temp. of substrate 2 is set to the m.p. of Si or below, especially 1,100W1,200°C to grow SiC on substrate 2 by general vapor phase growth. Thus, 3C type polycrystal SiC primary layer 4 or 30μm thickness is formed. Si layer 16 is formed on the side of substrate 2. Feed of starting material gases is then stopped, and an H2 atomosphere is formed, and the temp. of stand 26 is raised to about 1,500°C to melt substrate 2. After the melting the temp. is set to a fixed temp. of about 1,450W1,650°C, and this state is maintained. As a result, single crystal SiC secondary layer 14 of 10μm thickness is obtd. by growth for 2hr.
COPYRIGHT: (C)1980,JPO&Japio
JP5611879A 1979-01-25 1979-05-07 Manufacture of silicon carbide crystal layer Pending JPS55149191A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5611879A JPS55149191A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide crystal layer
DE3002671A DE3002671C2 (en) 1979-01-25 1980-01-25 Process for making a silicon carbide substrate
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5611879A JPS55149191A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide crystal layer

Publications (1)

Publication Number Publication Date
JPS55149191A true JPS55149191A (en) 1980-11-20

Family

ID=13018147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5611879A Pending JPS55149191A (en) 1979-01-25 1979-05-07 Manufacture of silicon carbide crystal layer

Country Status (1)

Country Link
JP (1) JPS55149191A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335562A (en) * 1994-06-10 1995-12-22 Hoya Corp Method for forming silicon carbide film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55104998A (en) * 1979-01-29 1980-08-11 Sharp Corp Production of silicon carbide crystal layer
JPS55144500A (en) * 1979-04-28 1980-11-11 Sharp Corp Producing silicon carbide crystal layer
JPS55144499A (en) * 1979-04-26 1980-11-11 Sharp Corp Producing silicon carbide crystal layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55104998A (en) * 1979-01-29 1980-08-11 Sharp Corp Production of silicon carbide crystal layer
JPS55144499A (en) * 1979-04-26 1980-11-11 Sharp Corp Producing silicon carbide crystal layer
JPS55144500A (en) * 1979-04-28 1980-11-11 Sharp Corp Producing silicon carbide crystal layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335562A (en) * 1994-06-10 1995-12-22 Hoya Corp Method for forming silicon carbide film

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