JPS55149191A - Manufacture of silicon carbide crystal layer - Google Patents
Manufacture of silicon carbide crystal layerInfo
- Publication number
- JPS55149191A JPS55149191A JP5611879A JP5611879A JPS55149191A JP S55149191 A JPS55149191 A JP S55149191A JP 5611879 A JP5611879 A JP 5611879A JP 5611879 A JP5611879 A JP 5611879A JP S55149191 A JPS55149191 A JP S55149191A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sic
- layer
- temp
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain an SiC crystal layer of high crystal perfectness through high temp. growth at the m.p. of Si or above by growing SiC on an Si substrate at the m.p. of Si or below and forming the second SiC layer on the SiC surface freed of the substrate.
CONSTITUTION: Reaction tube 22 is evacuated 32 and replaced with H2, and a surface layer of Si substrate 2 whose principal face is (111) face on sample stand 26 is removed by etching with HCl-H2 mixed gas. The temp. of substrate 2 is set to the m.p. of Si or below, especially 1,100W1,200°C to grow SiC on substrate 2 by general vapor phase growth. Thus, 3C type polycrystal SiC primary layer 4 or 30μm thickness is formed. Si layer 16 is formed on the side of substrate 2. Feed of starting material gases is then stopped, and an H2 atomosphere is formed, and the temp. of stand 26 is raised to about 1,500°C to melt substrate 2. After the melting the temp. is set to a fixed temp. of about 1,450W1,650°C, and this state is maintained. As a result, single crystal SiC secondary layer 14 of 10μm thickness is obtd. by growth for 2hr.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5611879A JPS55149191A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide crystal layer |
DE3002671A DE3002671C2 (en) | 1979-01-25 | 1980-01-25 | Process for making a silicon carbide substrate |
US06/369,911 US4582561A (en) | 1979-01-25 | 1982-04-19 | Method for making a silicon carbide substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5611879A JPS55149191A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide crystal layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55149191A true JPS55149191A (en) | 1980-11-20 |
Family
ID=13018147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5611879A Pending JPS55149191A (en) | 1979-01-25 | 1979-05-07 | Manufacture of silicon carbide crystal layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55149191A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07335562A (en) * | 1994-06-10 | 1995-12-22 | Hoya Corp | Method for forming silicon carbide film |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55104998A (en) * | 1979-01-29 | 1980-08-11 | Sharp Corp | Production of silicon carbide crystal layer |
JPS55144500A (en) * | 1979-04-28 | 1980-11-11 | Sharp Corp | Producing silicon carbide crystal layer |
JPS55144499A (en) * | 1979-04-26 | 1980-11-11 | Sharp Corp | Producing silicon carbide crystal layer |
-
1979
- 1979-05-07 JP JP5611879A patent/JPS55149191A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55104998A (en) * | 1979-01-29 | 1980-08-11 | Sharp Corp | Production of silicon carbide crystal layer |
JPS55144499A (en) * | 1979-04-26 | 1980-11-11 | Sharp Corp | Producing silicon carbide crystal layer |
JPS55144500A (en) * | 1979-04-28 | 1980-11-11 | Sharp Corp | Producing silicon carbide crystal layer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07335562A (en) * | 1994-06-10 | 1995-12-22 | Hoya Corp | Method for forming silicon carbide film |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52140267A (en) | Vapor epitaxial crystal growing device | |
JPS55149195A (en) | Manufacture of silicon carbide substrate | |
JPS55149191A (en) | Manufacture of silicon carbide crystal layer | |
JPS56160400A (en) | Growing method for gallium nitride | |
JPS55104999A (en) | Production of silicon carbide crystal layer | |
JPS55149192A (en) | Manufacture of silicon carbide crystal layer | |
JPS55149193A (en) | Manufacture of silicon carbide substrate | |
JPS57188498A (en) | Quartz crucible for pulling up silicon single crystal | |
JPS54157779A (en) | Production of silicon single crystal | |
JPS5423386A (en) | Manufacture of semiconductor device | |
JPS55149194A (en) | Manufacture of silicon carbide substrate | |
JPS5247673A (en) | Process for production of silicon crystal film | |
JPS5645897A (en) | Manufacture of silicon carbide crystal | |
JPS55149197A (en) | Manufacture of silicon carbide substrate | |
JPS55149198A (en) | Manufacture of silicon carbide substrate | |
JPS53108389A (en) | Manufacture for semiconductor device | |
JPS55149196A (en) | Manufacture of silicon carbide substrate | |
JPS5648237A (en) | Evacuated gaseous phase reactor | |
JPS53146299A (en) | Production of silicon carbide substrate | |
JPS55105000A (en) | Production of silicon carbide crystal layer | |
JPS5632396A (en) | Silicon single crystal pulling apparatus | |
JPS5645898A (en) | Manufacture of silicon carbide crystal | |
JPS5645896A (en) | Manufacture of silicon carbide crystal | |
JPS55116700A (en) | Production of silicon carbide crystal layer | |
JPS5234668A (en) | Gaseous phase growing process of semiconductor |