JPS55144499A - Producing silicon carbide crystal layer - Google Patents

Producing silicon carbide crystal layer

Info

Publication number
JPS55144499A
JPS55144499A JP5219879A JP5219879A JPS55144499A JP S55144499 A JPS55144499 A JP S55144499A JP 5219879 A JP5219879 A JP 5219879A JP 5219879 A JP5219879 A JP 5219879A JP S55144499 A JPS55144499 A JP S55144499A
Authority
JP
Japan
Prior art keywords
sic
layer
crystal
substrate
bench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5219879A
Other languages
Japanese (ja)
Other versions
JPS5838399B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5219879A priority Critical patent/JPS5838399B2/en
Publication of JPS55144499A publication Critical patent/JPS55144499A/en
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS5838399B2 publication Critical patent/JPS5838399B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To enhance crystal perfectness and to obtain a large SiC substrate, by a method wherein the first SiC crystal layer is formed on [111] crystal face of a silicon single crystal and after melting or removing the silicon single crystal, the second SiC crystal layer is formed on the first SiC crystal layer. CONSTITUTION:In a water-cooled, vertical-type, double-wall silica reaction tube 22, an SiC-covered graphite support bench 26 is installed and supported with a graphite support rod 24. The bench 26 is heated by induction of high-frequency current flowing in a coil 28. The lower end of the pipe 22 is sealed to flange 30 with O-ring, and a silica support 36 is supported by a base 34. The pipe 22 is exhausted and purged with H2. Then mixed HCl and H2 gas is used to etch away the main face [111] of silicon substrate 2 on the bench 26. Then, an Si saurce such as SiCl4 and a C source such as CCl4 are carried by Ar, etc. at 1,100-1,200 deg.C and supplied from pipe 38 so that an SiC layer 4 and a lateral SiC layer 16 are formed. Next, the source gas is stopped, H2 is flowed, and temperature is raised to 1,500 deg.C to melt 12 the substrate 2. Then the second SiC layer is formed at 1,450-1,650 deg.C. Thereafter, the temperature is lowered, the substrate is taken out, and Si is removed with hydrofluoric acid/nitric acid mixture to separate the SiC layer 4.
JP5219879A 1979-01-25 1979-04-26 Method for manufacturing silicon carbide crystal layer Expired JPS5838399B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5219879A JPS5838399B2 (en) 1979-04-26 1979-04-26 Method for manufacturing silicon carbide crystal layer
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5219879A JPS5838399B2 (en) 1979-04-26 1979-04-26 Method for manufacturing silicon carbide crystal layer

Publications (2)

Publication Number Publication Date
JPS55144499A true JPS55144499A (en) 1980-11-11
JPS5838399B2 JPS5838399B2 (en) 1983-08-23

Family

ID=12908080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5219879A Expired JPS5838399B2 (en) 1979-01-25 1979-04-26 Method for manufacturing silicon carbide crystal layer

Country Status (1)

Country Link
JP (1) JPS5838399B2 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55144500A (en) * 1979-04-28 1980-11-11 Sharp Corp Producing silicon carbide crystal layer
JPS55149191A (en) * 1979-05-07 1980-11-20 Sharp Corp Manufacture of silicon carbide crystal layer
US4582561A (en) * 1979-01-25 1986-04-15 Sharp Kabushiki Kaisha Method for making a silicon carbide substrate
US4623425A (en) * 1983-04-28 1986-11-18 Sharp Kabushiki Kaisha Method of fabricating single-crystal substrates of silicon carbide
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate
JPH09263497A (en) * 1996-03-29 1997-10-07 Denso Corp Production of silicon carbide single crystal
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
JP2012136372A (en) * 2010-12-24 2012-07-19 Toyo Tanso Kk Unit for liquid phase epitaxial growth of single crystal silicon carbide, and method for liquid phase epitaxial growth of single crystal silicon carbide
JP2012136376A (en) * 2010-12-24 2012-07-19 Toyo Tanso Kk Unit for liquid phase epitaxial growth of single crystal silicon carbide, and method for liquid phase epitaxial growth of single crystal silicon carbide
JP2012136366A (en) * 2010-12-24 2012-07-19 Toyo Tanso Kk Unit for liquid phase epitaxial growth of single crystal silicon carbide, and method for liquid phase epitaxial growth of single crystal silicon carbide
CN103270201A (en) * 2010-12-24 2013-08-28 东洋炭素株式会社 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
CN103270202A (en) * 2010-12-24 2013-08-28 东洋炭素株式会社 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon
CN103282557A (en) * 2010-12-24 2013-09-04 东洋炭素株式会社 Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
JP2017039622A (en) * 2015-08-19 2017-02-23 エア・ウォーター株式会社 Compound semiconductor substrate, and method for manufacturing compound semiconductor substrate

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4582561A (en) * 1979-01-25 1986-04-15 Sharp Kabushiki Kaisha Method for making a silicon carbide substrate
JPS55144500A (en) * 1979-04-28 1980-11-11 Sharp Corp Producing silicon carbide crystal layer
JPS5838400B2 (en) * 1979-04-28 1983-08-23 シャープ株式会社 Method for manufacturing silicon carbide crystal layer
JPS55149191A (en) * 1979-05-07 1980-11-20 Sharp Corp Manufacture of silicon carbide crystal layer
US4623425A (en) * 1983-04-28 1986-11-18 Sharp Kabushiki Kaisha Method of fabricating single-crystal substrates of silicon carbide
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate
JPH09263497A (en) * 1996-03-29 1997-10-07 Denso Corp Production of silicon carbide single crystal
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
CN103270201A (en) * 2010-12-24 2013-08-28 东洋炭素株式会社 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
EP2657374A1 (en) * 2010-12-24 2013-10-30 Toyo Tanso Co., Ltd. Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
JP2012136366A (en) * 2010-12-24 2012-07-19 Toyo Tanso Kk Unit for liquid phase epitaxial growth of single crystal silicon carbide, and method for liquid phase epitaxial growth of single crystal silicon carbide
JP2012136372A (en) * 2010-12-24 2012-07-19 Toyo Tanso Kk Unit for liquid phase epitaxial growth of single crystal silicon carbide, and method for liquid phase epitaxial growth of single crystal silicon carbide
CN103270202A (en) * 2010-12-24 2013-08-28 东洋炭素株式会社 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon
CN103282557A (en) * 2010-12-24 2013-09-04 东洋炭素株式会社 Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
EP2657375A1 (en) * 2010-12-24 2013-10-30 Toyo Tanso Co., Ltd. Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
JP2012136376A (en) * 2010-12-24 2012-07-19 Toyo Tanso Kk Unit for liquid phase epitaxial growth of single crystal silicon carbide, and method for liquid phase epitaxial growth of single crystal silicon carbide
EP2657375A4 (en) * 2010-12-24 2014-05-07 Toyo Tanso Co Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
EP2657374A4 (en) * 2010-12-24 2014-05-07 Toyo Tanso Co Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US9252206B2 (en) 2010-12-24 2016-02-02 Toyo Tanso Co., Ltd. Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US9447517B2 (en) 2010-12-24 2016-09-20 Toyo Tanso Co., Ltd. Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon
CN103282557B (en) * 2010-12-24 2017-02-15 东洋炭素株式会社 Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US10358741B2 (en) 2010-12-24 2019-07-23 Toyo Tanso Co., Ltd. Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
JP2017039622A (en) * 2015-08-19 2017-02-23 エア・ウォーター株式会社 Compound semiconductor substrate, and method for manufacturing compound semiconductor substrate

Also Published As

Publication number Publication date
JPS5838399B2 (en) 1983-08-23

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