JPS5717126A - Manufacture of silicon carbide process tube for semiconductor - Google Patents

Manufacture of silicon carbide process tube for semiconductor

Info

Publication number
JPS5717126A
JPS5717126A JP9093280A JP9093280A JPS5717126A JP S5717126 A JPS5717126 A JP S5717126A JP 9093280 A JP9093280 A JP 9093280A JP 9093280 A JP9093280 A JP 9093280A JP S5717126 A JPS5717126 A JP S5717126A
Authority
JP
Japan
Prior art keywords
pipe
graphite
sic
process tube
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9093280A
Other languages
Japanese (ja)
Inventor
Takashi Tanaka
Toshiaki Suzuki
Yoshie Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP9093280A priority Critical patent/JPS5717126A/en
Publication of JPS5717126A publication Critical patent/JPS5717126A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)

Abstract

PURPOSE:To manufacture a process tube having superior gas-impermeability by a method wherein after SiC is made to grow vapor phase epitaxially around a graphite pipe, the graphite pipe is burnt to be removed. CONSTITUTION:The graphite pipe 13 treated to obtain high purity is accomodated in the reaction tube 1 of a mobile high-frequency heater, the pipe is covered with a graphite electrode 8, methlchlorosilane or SiCl4 and toluene or chlorosilane and toluene are introduced from a gas feeding pipe 10 (11 is a nozzle for measurement of pressure in the pipe) making H2 as a carrier gas, the pipe is heated at 1,000 deg.C or more by a high-frequency work coil 3 to make SiC to be accumulated on the inner circumferential face of the pipe 13, and then the pipe is heated in an oxidizing atmosphere to make the pipe to be removed, and the SiC tube is formed. Accordingly the process tube having no contamination to be generated by rediffusion of impurity, having small speed of oxidation, and being not to be deformed thermally and having long life can be obtained.
JP9093280A 1980-07-03 1980-07-03 Manufacture of silicon carbide process tube for semiconductor Pending JPS5717126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9093280A JPS5717126A (en) 1980-07-03 1980-07-03 Manufacture of silicon carbide process tube for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9093280A JPS5717126A (en) 1980-07-03 1980-07-03 Manufacture of silicon carbide process tube for semiconductor

Publications (1)

Publication Number Publication Date
JPS5717126A true JPS5717126A (en) 1982-01-28

Family

ID=14012213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9093280A Pending JPS5717126A (en) 1980-07-03 1980-07-03 Manufacture of silicon carbide process tube for semiconductor

Country Status (1)

Country Link
JP (1) JPS5717126A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5978529A (en) * 1982-10-28 1984-05-07 Toshiba Ceramics Co Ltd Silicon carbide material for manufacturing semiconductor
JP2003034867A (en) * 2001-07-27 2003-02-07 Tokai Carbon Co Ltd TUBULAR SiC-COMPACT AND MANUFACTURING METHOD THEREFOR

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826597A (en) * 1971-08-04 1973-04-07
JPS5015478A (en) * 1973-04-26 1975-02-18

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826597A (en) * 1971-08-04 1973-04-07
JPS5015478A (en) * 1973-04-26 1975-02-18

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5978529A (en) * 1982-10-28 1984-05-07 Toshiba Ceramics Co Ltd Silicon carbide material for manufacturing semiconductor
JP2003034867A (en) * 2001-07-27 2003-02-07 Tokai Carbon Co Ltd TUBULAR SiC-COMPACT AND MANUFACTURING METHOD THEREFOR
JP4702712B2 (en) * 2001-07-27 2011-06-15 東海カーボン株式会社 Tubular SiC molded body and method for producing the same

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