JPS56169320A - Silicon carbide semiconductor - Google Patents

Silicon carbide semiconductor

Info

Publication number
JPS56169320A
JPS56169320A JP5560681A JP5560681A JPS56169320A JP S56169320 A JPS56169320 A JP S56169320A JP 5560681 A JP5560681 A JP 5560681A JP 5560681 A JP5560681 A JP 5560681A JP S56169320 A JPS56169320 A JP S56169320A
Authority
JP
Japan
Prior art keywords
gas
vessel
lead
type
port
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5560681A
Other languages
Japanese (ja)
Other versions
JPS6236632B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP5560681A priority Critical patent/JPS56169320A/en
Publication of JPS56169320A publication Critical patent/JPS56169320A/en
Publication of JPS6236632B2 publication Critical patent/JPS6236632B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a P type or an N type silicon carbide semiconductor by vapor phase growth by a method wherein a boat being disposed in upright with plural substrates is accomodated in a reaction vessel and is heated forming a vacuum, and gas of a carbide and gas of a P type or an N type impurity are introduced therein mixing them. CONSTITUTION:An exhaust gas lead-out port 6 is provided at one side end part of the reaction vessel 3 and a reaction gas lead-in port 9 at the other side, and a high- frequency heating furnace 4 and a resistance heater 5 to surround the furnace is provided at the outer circumference of the vessel 3. A vacuum pump 8 is connected to the lead-out port 6 through a valve 11, and a vessel 7 to apply high-frequency energy 10 for activation is fitted up to a lead-in port 9. The N type impurity 15 of PH3, etc., and H2 carrier gas 16 are sent into the vessel 7, and moreover a carrier gas 12, carbide gas 13 of CH4, etc., and silicide gas of SiH4, etc., are sent in being mixed in a mixer 17. Accordingly the desired SiC is made to grow on the substrate 1 of quartz, etc., being disposed in upright on the boat 2 holding the pressure in the reaction vessel 3 at 10<-3> Torr and the temperature at 600-1,200 deg.C.
JP5560681A 1981-04-15 1981-04-15 Silicon carbide semiconductor Granted JPS56169320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5560681A JPS56169320A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5560681A JPS56169320A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15288778A Division JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56169320A true JPS56169320A (en) 1981-12-26
JPS6236632B2 JPS6236632B2 (en) 1987-08-07

Family

ID=13003422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5560681A Granted JPS56169320A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor

Country Status (1)

Country Link
JP (1) JPS56169320A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115872A (en) * 1981-12-28 1983-07-09 Kanegafuchi Chem Ind Co Ltd Flexible photoelectromotive force generating device
JP2004297008A (en) * 2003-03-28 2004-10-21 National Institute Of Advanced Industrial & Technology P-type semiconductor material, its manufacturing method, its manufacturing device, photoelectric conversion element, light emitting device, and thin film transistor
JP2005268481A (en) * 2004-03-18 2005-09-29 Toppan Printing Co Ltd Non-single crystal solar cell and apparatus for manufacturing p type semiconductor material
US10176958B2 (en) 2012-05-07 2019-01-08 Tanaka Kikinzoku Kogyo K.K. Electrode material for thermal-fuse movable electrode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833150A (en) * 1971-08-28 1973-05-08
JPS4942423A (en) * 1972-05-04 1974-04-22
JPS531465A (en) * 1976-06-25 1978-01-09 Matsushita Electric Ind Co Ltd Manufacturer for semiconductor mono crystal thin film and its manufacturing unit
JPS54153740A (en) * 1978-05-25 1979-12-04 Ulvac Corp Continuous vacuum treatment apparatus
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833150A (en) * 1971-08-28 1973-05-08
JPS4942423A (en) * 1972-05-04 1974-04-22
JPS531465A (en) * 1976-06-25 1978-01-09 Matsushita Electric Ind Co Ltd Manufacturer for semiconductor mono crystal thin film and its manufacturing unit
JPS54153740A (en) * 1978-05-25 1979-12-04 Ulvac Corp Continuous vacuum treatment apparatus
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115872A (en) * 1981-12-28 1983-07-09 Kanegafuchi Chem Ind Co Ltd Flexible photoelectromotive force generating device
JP2004297008A (en) * 2003-03-28 2004-10-21 National Institute Of Advanced Industrial & Technology P-type semiconductor material, its manufacturing method, its manufacturing device, photoelectric conversion element, light emitting device, and thin film transistor
JP2005268481A (en) * 2004-03-18 2005-09-29 Toppan Printing Co Ltd Non-single crystal solar cell and apparatus for manufacturing p type semiconductor material
US10176958B2 (en) 2012-05-07 2019-01-08 Tanaka Kikinzoku Kogyo K.K. Electrode material for thermal-fuse movable electrode

Also Published As

Publication number Publication date
JPS6236632B2 (en) 1987-08-07

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