CN209243237U - A kind of semiconductor preparation facilities and gallium arsenide semiconductor preparation facilities - Google Patents
A kind of semiconductor preparation facilities and gallium arsenide semiconductor preparation facilities Download PDFInfo
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- CN209243237U CN209243237U CN201821021064.XU CN201821021064U CN209243237U CN 209243237 U CN209243237 U CN 209243237U CN 201821021064 U CN201821021064 U CN 201821021064U CN 209243237 U CN209243237 U CN 209243237U
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Abstract
The utility model discloses a kind of semiconductor preparation facilities and gallium arsenide semiconductor preparation facilities, it is prepared applied to horizontal Bridgman method semiconductor, wherein the semiconductor preparation facilities includes the first furnace body and the second furnace body, temperature control equipment is individually arranged in first furnace body and the second furnace body, first furnace body is connected with second furnace body by intermediate conduit, wherein, thermal insulation material is coated in the periphery of the intermediate conduit.The problems such as device of the utility model realizes the temperature of effectively independent control high-temperature region and low-temperature space, avoids polycrystal material oxidation caused by as quartz ampoule deformation and cracking etc. occur or arsenic leakage and incomplete polycrystal material tail portion synthesis；Further, since Insulation appropriate is arranged between high-temperature region and middle warm area, so that the component of evaporation is able to react with other components completely, obtain matching uniform semiconducting compound.
Description
Technical field
The utility model belongs to technical field of semiconductor preparation, and in particular to a kind of semiconductor preparation facilities, more particularly to
A kind of improvement of the furnace body for horizontal Bridgman method semiconductor preparation facilities.
Background technique
The conductive capability of semiconductor material is between conductor and insulator, and resistivity is about in 1m Ω cm~1G Ω
It is a kind of electronic material that there is semiconducting behavior, can be used to make semiconductor devices and integrated circuit within the scope of cm.
For example, GaAs (GaAs) is by feat of high-frequency, high electron mobility, low noise, output power are high, power consumption
Superior characteristic, the development prospects such as small, high efficiency and the linearity are good, are not easy to be distorted are encouraging.And to obtain GaAs
The premise of material is growth arsenide gallium monocrystal, and the acquisition of arsenide gallium monocrystal again relies on the synthesis of gallium arsenide polycrystal.GaAs is more
Crystalline substance synthesis usually has horizontal Bridgman method, and low-pressure oxidized boron fluid-tight arsenic injects synthetic method, high-pressure oxidation boron fluid-tight fabricated in situ
The methods of method.
When synthesizing gallium arsenide polycrystal using horizontal Bridgman method, it is generally the case that due to heat radiation etc., high-temperature region
It is not easy to control with the temperature of low-temperature space, often there is polycrystal material oxidation caused by quartz ampoule deformation and cracking etc. or arsenic leakage, with
And polycrystal material tail portion synthesizes the problems such as incomplete；In addition, there is no Insulation appropriate between high-temperature region and middle warm area, cause to steam
Arsenic partial condensation after hair matches uniform gallium arsenide to be difficult to obtain.
Utility model content
[technical problems to be solved]
The purpose of this utility model is in the above-mentioned condition for improving the prior art.The utility model discloses adjustment furnace body high temperature
The arrangement in area and low-temperature space more independently controls the temperature of high-temperature region and low-temperature space, meanwhile, guarantee high-temperature region and low-temperature space
Between junction can have temperature appropriate, so as to improve the quality and yield of semiconductor product.
[technical solution]
The first aspect of the utility model provides a kind of semiconductor preparation facilities, partly leads applied to horizontal Bridgman method
Temperature control equipment is individually arranged in body preparation, including the first furnace body and the second furnace body, first furnace body and the second furnace body,
First furnace body is connected with second furnace body by intermediate conduit, wherein is coated with heat preservation in the periphery of the intermediate conduit
Material.
The second aspect of the utility model provides a kind of gallium arsenide semiconductor preparation facilities, including the utility model first
Device described in aspect, first furnace body is low-temperature space furnace body and second furnace body is high-temperature region furnace body.
[beneficial effect]
Temperature is individually arranged by the first furnace body and the second furnace body in semiconductor preparation facilities provided by the utility model
Control device, and the first furnace body is connected with second furnace body by the intermediate conduit that periphery is coated with thermal insulation material, has been realized
The temperature of effect ground independent control high-temperature region and low-temperature space, reducing undesirable heat radiation influences, and, it prevents from deforming because of quartz ampoule
With cracking etc. caused by polycrystal material oxidation or arsenic leakage.Since Insulation appropriate being arranged between high-temperature region and low-temperature space, make
The component that must be evaporated is able to react with other components completely, obtains matching semiconducting compound uniform, of good performance.
Detailed description of the invention
Fig. 1 is the preparation facilities schematic diagram according to an embodiment of the present invention；And
Fig. 2 is the preparation facilities schematic diagram according to another embodiment of the utility model.
Specific embodiment
The embodiments of the present invention is described below in conjunction with attached drawing.It is described in attached drawing using similar appended drawing reference in the whole text
Similar or identical component.Here the different characteristic disclosed can be used alone, or vary from one another combination, be not specified by this
Utility model is defined in the specific combination of described in the text.Described embodiment is not used in the model for limiting claim as a result,
It encloses.
Phrase " in one embodiment ", " in embodiments ", " in some embodiments " may be used in explanation,
Or " in other embodiments ", it can respectively refer to the implementation same or different according to one or more disclosed herein respectively
Mode.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that article or equipment including a series of elements not only include those elements, but also
It including other elements that are not explicitly listed, or further include for this article or the intrinsic element of equipment.Do not having
In the case where more limitations, the element that is limited by sentence "including a ...", it is not excluded that in the article including above-mentioned element
Or there is also other identical elements in equipment.
[embodiment 1]
As shown in Figure 1, semiconductor preparation facilities provided by the embodiment of the utility model, is applied to horizontal Bridgman method half
Temperature control dress is individually arranged in conductor preparation, including the first furnace body 1 and the second furnace body 2, the first furnace body 1 and the second furnace body 2
9-1,9-2 are set, the first furnace body 1 and the second furnace body 2 are connected by intermediate conduit 8, wherein are coated with guarantor in the periphery of intermediate conduit 8
Adiabator 10.
First furnace body 1, intermediate conduit 8, the common restriction internal cavity of the second furnace body 2, carrying reaction boat 5,6 and reactant
In the internally placed cavity of quartz ampoule bottle 4.
The temperature control equipment 9-1 for providing 1000 DEG C or less heating includes 2-4 sections of control temperature units, provides and adds higher than 1000 DEG C
The temperature control equipment 9-2 of heat includes 5-7 sections of control temperature units.
Control temperature unit is used to control the temperature of furnace body, it may include heating unit and temperature measuring unit.Heating unit can pass through height
Frequency induction coil or resistance heating stove heating, temperature measuring unit can be carried out by thermocouple.
[embodiment 2]
As shown in Fig. 2, semiconductor preparation facilities provided by the embodiment of the utility model, is applied to horizontal Bridgman method arsenic
Change the preparation of gallium semiconductor, including temperature is individually arranged in the first furnace body 1 and the second furnace body 2, the first furnace body 1 and the second furnace body 2
Control device 9-1,9-2, the first furnace body 1 is low-temperature space furnace body and the second furnace body 2 is high-temperature region furnace body, the first furnace body 1 and second
Furnace body 2 is connected by intermediate conduit 8, wherein is coated with thermal insulation material 10 in the periphery of intermediate conduit 8.
With quartz ampoule bottle 4 seal arsenic boat 5 and gallium boat 6 be individually positioned in the first furnace body 1 and the second furnace body 2 in.
Second furnace body 2 is made of 6 sections of temperature controls, and the first furnace body 1 is made of 3 sections of temperature controls.
Since the temperature of high-temperature region when semiconductor synthesizes and the temperature difference of low-temperature space are too big, in routine techniques, usually adopt
With the same furnace body, it is difficult to carry out the temperature control of low-temperature space due to thermal diffusion and heat radiation etc., often occurs being used to close
Even there is quartz ampoule and the safety problems such as bursts in the quartz ampoule strain cracking of envelope.The utility model on heating method by using
Low-temperature space and high-temperature region are carried out temperature control with furnace body respectively, and periphery are arranged and is coated with heat preservation by the heating structure of twin furnace
The intermediate conduit of material realizes the accurate control of furnace body temperature, nationality so that temperature is easily controllable when synthesis semiconductor
This, the proportion of the semiconductor of synthesis such as polycrystalline or monocrystalline is uniform, and qualification rate is high.
It is as follows for the further change mode of Examples 1 and 2.
Optionally, wall 3 is further arranged in the inner sidewall of at least one the first furnace body 1 and second furnace body 2, at interval
Layer 3, which surrounds, limits uniformly heated furnace chamber in space, for improving internal thermal field uniformity, to be more advantageous to the semiconductor of synthesis
The uniformity and further increase qualification rate that product matches.
Optionally, wall 3 is configured to quartz ampoule, carborundum tube, mullite pipe or combinations thereof casing, preferably silicon carbide
Pipe, mullite pipe or combinations thereof casing, it is more durable, while can more effectively reduce the inhomogeneities of inner radial temperature.
Optionally, when quartz ampoule bottle 4 is placed in the first furnace body 1 and the second furnace body 2, by wall between inner sidewall
3 separate.
Optionally, the spacing between the first furnace body 1 and the second furnace body 2 is 15-20cm.
Two furnace chambers it is spaced a distance, can avoid being difficult to carry out caused by due to thermal diffusion and heat radiation etc.
The temperature of low-temperature space controls.However, this easily causes middle part to be subcooled apart from too long such as larger than 20cm, too short such as less than 15cm, up to not
To the temperature of low-temperature space and high-temperature region control, through research, the inventor has found that, the spacing of above range can realize low-temperature space and
The temperature of high-temperature region controls while middle part junction temperature being made in OK range, to guarantee that reaction is gone on smoothly always, obtain
Match uniform semiconductor product.
Optionally, intermediate conduit 8 periphery coat thermal insulation material 10 be low-density thermal insulation material, cladding with a thickness of
3cm-5cm.The thickness of the material is too thin, cannot effectively keep the temperature, too thick to waste raw material, therefore selects above range that can meet guarantor
Temperature requires while making cost minimization.
The low-density thermal insulation material is the material as made from the component comprising silica and/or aluminium oxide.Thermal insulating material
Material is also referred to as heat preserving and insulating material, refers to the material or composite body for having significant resistance to hot-fluid, heat preserving and insulating material
Common feature be lightweight, it is loose, be in cellular or threadiness, with the conduction of the immobilising air barrier heat in its inside wherein without
Machine material has non-ignitable, wide using temperature, chemical corrosion resistance is preferable etc..The thermal insulation material that the utility model uses be, for example, include
Thermal insulation material made from silica component includes silica and aluminium oxide comprising thermal insulation material made from alumina component
Thermal insulation material made from component.Specific preparation method and product can refer to methods known in the art, as CN101671158A,
The product of the preparation of method disclosed in CN102795781A etc..
Optionally, preparation facilities further includes the thermal-insulating sealing plate of material 7 at 2 both ends of the first furnace body 1 and the second furnace body.It keeps the temperature close
Closure material plate 7 may be, for example, heat-preservation cotton plate, silicate fiber plate etc..The thermal-insulating sealing material of first furnace body and the second furnace body can make
It also can be used different materials with identical material, such as the thermal insulation material of the first furnace chamber can be used and be suitable for providing lower temperature furnace
The thermal insulation material for being suitable for providing higher temperature furnace body can be used in the thermal insulation material of body, the thermal insulation material of the second furnace chamber.
In order to make those skilled in the art better understand the technical solution of the utility model, below with the polycrystalline of GaAs
It is illustrated for synthesis.
[embodiment 3]
As shown in Fig. 2, semiconductor preparation facilities used includes the first furnace body 1 and the second furnace body 2, the first furnace body 1 and the
Temperature control equipment 9-1,9-2 is individually arranged in two furnace bodies 2, and the first furnace body 1 is low-temperature space furnace body and the second furnace body 2 is high temperature
Area's furnace body, the first furnace body 1 and the second furnace body 2 are that 15-20cm intermediate conduit 8 connects by length, wherein in the outer of intermediate conduit 8
It is coated with 3cm-5cm low-density thermal insulation material 10 week.
With quartz ampoule bottle 4 seal arsenic boat 5 and gallium boat 6 be individually positioned in the first furnace body 1 and the second furnace body 2 in.The
Two furnace bodies 2 are made of 6 sections of temperature controls, and the first furnace body 1 is made of 3 sections of temperature controls.
First furnace body 1 is connected to the carborundum tube interval of the first furnace body 1 and the second furnace body 2 with the setting of 2 inner sidewall of the second furnace body
Layer 3；It is separated between quartz ampoule bottle 4 and inner sidewall by wall 3.
Thermal-insulating sealing plate of material 7 is arranged in first furnace body 1 and 2 both ends of the second furnace body.
The polycrystalline growth method of GaAs includes the following steps:
(1) materials such as quartz ampoule, PBN boat are cleaned up with hydrofluoric acid, the mixed acid of nitric acid and deionized water, is used in combination
Ethanol dehydration air-dries spare；The PBN boat cleaned up is put into clean quartz heating stove and is toasted, baking temperature 600-
900 DEG C or so, baking time is 2-4 hours, and then cooled to room temperature is stand-by；
(2) the 6N gallium for weighing about 2000g is placed in a PBN boat, is pushed into quartz reaction bottom of the tube；Weigh about 2170g
6N arsenic be placed in a PBN boat, and the boat is put into the quartz reaction pipe port of wash clean, finally covers quartz cap；
(3) mounted crystal reaction tube is moved on oven, is vacuumized, and be heated to temperature at 150-300 DEG C, kept the temperature
Power supply is closed after 3-4 hours, and carries out vacuum sealing welding, and cooled to room temperature；
(4) by equipped in arsenic and gallium and the crystal reaction tube being sealed loading HB horizontal stove body, the boat one end for filling arsenic is placed on
Low-temperature space, the one end for filling the boat of gallium are placed on high-temperature region；
(5) it heats, the temperature of low-temperature space is controlled in 620-650 DEG C or so (613 DEG C of the sublimation point of arsenic), high-temperature region furnace
The temperature of body keeps the temperature 1-3h at 1250-1255 DEG C (higher than 1238 DEG C of the fusing point of GaAs), constantly rises from the arsenic of low-temperature end
Huawei's gas and the gallium of high-temperature region occur combination reaction and form GaAs, until arsenic evaporates, after complete reaction, are cooled to
Room temperature obtains gallium arsenide polycrystal；
(6) crystal reaction tube is taken out out of furnace body, is cut from arsenic end by quartz ampoule, and synthetic semicircle polycrystalline rod is taken
Out and detected.
Do not occur quartz ampoule deformation and cracking phenomena in reaction process.The polycrystalline rod surface synthesized three times in parallel
Gloss, it is fine and close, without hole, it is good without rich gallium, synthesis ratio；The polycrystalline qualification rate synthesized three times is 93% or more, same crystal bar
Head carrier concentration and tail portion carrier density approximation, it is seen that be made crystal uniformity it is very good.
The device of the utility model uses the heating structure of twin furnace on heating method, and low-temperature space and high-temperature region are used respectively
Furnace body carries out temperature control, and junction is kept the temperature using low density material, so that the accurate control of furnace body temperature is realized,
The qualification rate for obtaining product is high, and crystal property uniformity is good.
The utility model includes at least following concept:
A kind of semiconductor preparation facilities of concept 1. is applied to horizontal Bridgman method semiconductor and prepares, including the first furnace body
With the second furnace body, first furnace body and the second furnace body are individually arranged temperature control equipment, first furnace body and described
Second furnace body is connected by intermediate conduit, wherein is coated with thermal insulation material in the periphery of the intermediate conduit.
The semiconductor preparation facilities according to concept 1 of concept 2., wherein first furnace body, the intermediate conduit, institute
It states the second furnace body and limits internal cavity jointly, carrying is reacted in the internally placed cavity of quartz ampoule bottle of boat and reactant.
The semiconductor preparation facilities according to concept 1 or 2 of concept 3., wherein the first furnace body and second furnace body are extremely
Wall is further arranged in one of few inner sidewall, limits uniformly heated furnace chamber to surround in space in wall.
The semiconductor preparation facilities according to concept 3 of concept 4., wherein the spacer formation is quartz ampoule, carbonization
Silicone tube, mullite pipe or combinations thereof casing.
The semiconductor preparation facilities according to concept 3 of concept 5., wherein the quartz ampoule bottle is in the first furnace body and institute
It states when being placed in the second furnace body, by the spacing layer separates between the inner sidewall.
The device according to concept 1 or 2 of concept 6., wherein the temperature control equipment packet of 1000 DEG C or less heating is provided
2-4 sections of control temperature units are included, providing the temperature control equipment heated higher than 1000 DEG C includes 5-7 sections of control temperature units.
The semiconductor preparation facilities according to concept 1 or 2 of concept 7., wherein first furnace body and second furnace
Spacing between body is 15-20cm.
The semiconductor preparation facilities according to concept 1 or 2 of concept 8., wherein coated in the periphery of the intermediate conduit
Thermal insulation material be low-density thermal insulation material, coat with a thickness of 3 cm-5cm.
A kind of gallium arsenide semiconductor preparation facilities of concept 9., wherein including the dress according to any one of concept 1-8
It sets, first furnace body is low-temperature space furnace body and second furnace body is high-temperature region furnace body.
The gallium arsenide semiconductor preparation facilities according to concept 9 of concept 10., wherein the arsenic sealed with quartz ampoule bottle
Boat and gallium boat are individually positioned in the low-temperature space furnace body and in the high-temperature region furnace body.
The gallium arsenide semiconductor preparation facilities according to concept 10 of concept 11., wherein the high-temperature region furnace body is by 6 sections
Temperature control composition, the low-temperature space furnace body are made of 3 sections of temperature controls.
It is understood that above embodiments and its preferred/optional example are merely to illustrate that the utility model
Principle and the illustrative embodiments used, however the utility model is not limited thereto.For ordinary skill in the art
For personnel, in the case where not departing from the spirit and essence of the utility model, various changes and modifications can be made therein, these changes
Type and improvement are also considered as the protection scope of the utility model.
Claims (11)
1. a kind of semiconductor preparation facilities is applied to horizontal Bridgman method semiconductor and prepares, which is characterized in that including the first furnace
Temperature control equipment, first furnace body and institute is individually arranged in body and the second furnace body, first furnace body and the second furnace body
It states the second furnace body to be connected by intermediate conduit, wherein be coated with thermal insulation material in the periphery of the intermediate conduit.
2. semiconductor preparation facilities according to claim 1, which is characterized in that first furnace body, the intermediate conduit,
Second furnace body limits internal cavity jointly, and carrying is reacted in the internally placed cavity of quartz ampoule bottle of boat and reactant.
3. semiconductor preparation facilities according to claim 2, which is characterized in that the first furnace body and second furnace body are at least
One of inner sidewall wall is further set, with wall surround space in limit uniformly heated furnace chamber.
4. semiconductor preparation facilities according to claim 3, which is characterized in that the spacer formation is quartz ampoule, carbon
SiClx pipe, mullite pipe or combinations thereof casing.
5. semiconductor preparation facilities according to claim 3, which is characterized in that the quartz ampoule bottle in the first furnace body and
When being placed in second furnace body, by the spacing layer separates between the inner sidewall.
6. semiconductor preparation facilities according to claim 1 or 2, which is characterized in that provide the temperature of 1000 DEG C or less heating
Spending control device includes 2-4 sections of control temperature units, and providing the temperature control equipment heated higher than 1000 DEG C includes 5-7 sections of temperature control lists
Member.
7. semiconductor preparation facilities according to claim 1 or 2, which is characterized in that first furnace body and described second
Spacing between furnace body is 15-20cm.
8. semiconductor preparation facilities according to claim 1 or 2, which is characterized in that wrapped in the periphery of the intermediate conduit
The thermal insulation material covered is low-density thermal insulation material, is coated with a thickness of 3cm-5cm.
9. a kind of gallium arsenide semiconductor preparation facilities, which is characterized in that including dress according to claim 1 to 8
It sets, first furnace body is low-temperature space furnace body, and, second furnace body is high-temperature region furnace body.
10. gallium arsenide semiconductor preparation facilities according to claim 9, which is characterized in that sealed with quartz ampoule bottle
Arsenic boat and gallium boat are individually positioned in the low-temperature space furnace body and in the high-temperature region furnace body.
11. gallium arsenide semiconductor preparation facilities according to claim 10, which is characterized in that the high-temperature region furnace body is by 6
Section temperature control composition, the low-temperature space furnace body are made of 3 sections of temperature controls.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821021064.XU CN209243237U (en) | 2018-06-29 | 2018-06-29 | A kind of semiconductor preparation facilities and gallium arsenide semiconductor preparation facilities |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821021064.XU CN209243237U (en) | 2018-06-29 | 2018-06-29 | A kind of semiconductor preparation facilities and gallium arsenide semiconductor preparation facilities |
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| Publication Number | Publication Date |
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| CN209243237U true CN209243237U (en) | 2019-08-13 |
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| CN201821021064.XU Active CN209243237U (en) | 2018-06-29 | 2018-06-29 | A kind of semiconductor preparation facilities and gallium arsenide semiconductor preparation facilities |
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2018
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Effective date of registration: 20210210 Address after: 101400 No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing (cluster registration) Patentee after: Beijing Huihong Technology Co., Ltd Address before: 101407 Yanqi Industrial Development Zone, Huairou District, Beijing Patentee before: Hanergy New Material Technology Co.,Ltd. |
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Effective date of registration: 20210928 Address after: 101400 Yanqi Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Dongjun new energy Co.,Ltd. Address before: 101400 No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing (cluster registration) Patentee before: Beijing Huihong Technology Co., Ltd |
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