JPS55136199A - Vapor phase growing method for magnesia spinel - Google Patents
Vapor phase growing method for magnesia spinelInfo
- Publication number
- JPS55136199A JPS55136199A JP4359879A JP4359879A JPS55136199A JP S55136199 A JPS55136199 A JP S55136199A JP 4359879 A JP4359879 A JP 4359879A JP 4359879 A JP4359879 A JP 4359879A JP S55136199 A JPS55136199 A JP S55136199A
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- hcl
- mgcl2
- magnesia spinel
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4359879A JPS5924760B2 (en) | 1979-04-12 | 1979-04-12 | Vapor phase growth method of magnesia spinel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4359879A JPS5924760B2 (en) | 1979-04-12 | 1979-04-12 | Vapor phase growth method of magnesia spinel |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55136199A true JPS55136199A (en) | 1980-10-23 |
JPS5924760B2 JPS5924760B2 (en) | 1984-06-12 |
Family
ID=12668240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4359879A Expired JPS5924760B2 (en) | 1979-04-12 | 1979-04-12 | Vapor phase growth method of magnesia spinel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5924760B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4507169A (en) * | 1981-06-29 | 1985-03-26 | Fujitsu Limited | Method and apparatus for vapor phase growth of a semiconductor |
KR100432907B1 (en) * | 2001-11-29 | 2004-05-24 | 김정기 | Method for growing single crystal of magnesia |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59162273A (en) * | 1983-03-07 | 1984-09-13 | Anelva Corp | Continuous producing device for thin film |
-
1979
- 1979-04-12 JP JP4359879A patent/JPS5924760B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4507169A (en) * | 1981-06-29 | 1985-03-26 | Fujitsu Limited | Method and apparatus for vapor phase growth of a semiconductor |
KR100432907B1 (en) * | 2001-11-29 | 2004-05-24 | 김정기 | Method for growing single crystal of magnesia |
Also Published As
Publication number | Publication date |
---|---|
JPS5924760B2 (en) | 1984-06-12 |
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