JPS55136199A - Vapor phase growing method for magnesia spinel - Google Patents

Vapor phase growing method for magnesia spinel

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Publication number
JPS55136199A
JPS55136199A JP4359879A JP4359879A JPS55136199A JP S55136199 A JPS55136199 A JP S55136199A JP 4359879 A JP4359879 A JP 4359879A JP 4359879 A JP4359879 A JP 4359879A JP S55136199 A JPS55136199 A JP S55136199A
Authority
JP
Japan
Prior art keywords
vapor phase
hcl
mgcl2
magnesia spinel
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4359879A
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Japanese (ja)
Other versions
JPS5924760B2 (en
Inventor
Masaru Ihara
Hideki Yamawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4359879A priority Critical patent/JPS5924760B2/en
Publication of JPS55136199A publication Critical patent/JPS55136199A/en
Publication of JPS5924760B2 publication Critical patent/JPS5924760B2/en
Expired legal-status Critical Current

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Abstract

PURPOSE:To enable vapor phase epitaxial growth of uniform high-quality magnesia spinel by using specified substances such as Al and HCl as starting materials and carrying MgCl2 and AlCl3 onto a semiconductor substrate in a predetermined molar ratio at a predetermined temp. CONSTITUTION:In vapor phase epitaxial growth of single crystal Mg.Al2O3 on semiconductor substrate 8 in reaction tube 12 provided with heaters 4, 5 and high frequency heating furnace 10, Al, HCl, CO2 and MgCl2 are used as starting materials. The MgCl2 and AlCl3 as a reaction product of the Al and HCl are carried to the growing region of tube 12 in a molar ratio of 0.1-10 at a growing temp. of 850-1,080, desirably 900-1,060 deg.C and the flow rate of the CO2 is made 2-100, pref. 4-80 times as high as that of the HCl. Thus, vapor phase epitaxial growth of uniform high-quality magnesia spinel is enabled. This method is very effective in manufacture of a silicon MOS transistor, etc.
JP4359879A 1979-04-12 1979-04-12 Vapor phase growth method of magnesia spinel Expired JPS5924760B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4359879A JPS5924760B2 (en) 1979-04-12 1979-04-12 Vapor phase growth method of magnesia spinel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4359879A JPS5924760B2 (en) 1979-04-12 1979-04-12 Vapor phase growth method of magnesia spinel

Publications (2)

Publication Number Publication Date
JPS55136199A true JPS55136199A (en) 1980-10-23
JPS5924760B2 JPS5924760B2 (en) 1984-06-12

Family

ID=12668240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4359879A Expired JPS5924760B2 (en) 1979-04-12 1979-04-12 Vapor phase growth method of magnesia spinel

Country Status (1)

Country Link
JP (1) JPS5924760B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507169A (en) * 1981-06-29 1985-03-26 Fujitsu Limited Method and apparatus for vapor phase growth of a semiconductor
KR100432907B1 (en) * 2001-11-29 2004-05-24 김정기 Method for growing single crystal of magnesia

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59162273A (en) * 1983-03-07 1984-09-13 Anelva Corp Continuous producing device for thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507169A (en) * 1981-06-29 1985-03-26 Fujitsu Limited Method and apparatus for vapor phase growth of a semiconductor
KR100432907B1 (en) * 2001-11-29 2004-05-24 김정기 Method for growing single crystal of magnesia

Also Published As

Publication number Publication date
JPS5924760B2 (en) 1984-06-12

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