JPS56109899A - Gaseous phase growing method for magnespinel - Google Patents

Gaseous phase growing method for magnespinel

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Publication number
JPS56109899A
JPS56109899A JP1037480A JP1037480A JPS56109899A JP S56109899 A JPS56109899 A JP S56109899A JP 1037480 A JP1037480 A JP 1037480A JP 1037480 A JP1037480 A JP 1037480A JP S56109899 A JPS56109899 A JP S56109899A
Authority
JP
Japan
Prior art keywords
mgcl
tube
gas
time
magnespinel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1037480A
Other languages
Japanese (ja)
Inventor
Masayuki Chifuku
Masaru Ihara
Hideki Yamawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1037480A priority Critical patent/JPS56109899A/en
Publication of JPS56109899A publication Critical patent/JPS56109899A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prevent characteristic of the resulting crystal from being deteriorated in the gaseous phase growth of magnespinel using MgCl2, etc. as starting materials by feeding a carrier gas onto the MgCl2 in a reaction tube at the time of growth and reversing the direction of the gas in the tube at the other time to discharge the gas from the tube.
CONSTITUTION: MgCl2 and Al are separately placed in source chamber 2 of reaction tube 1. At the time of crystal growth, H2 is fed onto the MgCl2 as a carrier gas, H2 and HCl are fed onto the Al, and CO2 and H2 are introduced through pipe 5. AlCl3 as a reaction product of Al and HCl, MgCl2 and CO2 are allowed to react to grow an MgO.Al2O3 crystal on silicon wafer 6. At the other time, three-way motor valve 8 attached to the passage of the carrier gas for the MgCl2 is changed over to reverse the direction of the gas in tube 1 and discharge the gas from tube 1 as shows by arrow B. Thus, MgCl2 vapor is prevented from depositing on the inner wall of chamber 2.
COPYRIGHT: (C)1981,JPO&Japio
JP1037480A 1980-01-31 1980-01-31 Gaseous phase growing method for magnespinel Pending JPS56109899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1037480A JPS56109899A (en) 1980-01-31 1980-01-31 Gaseous phase growing method for magnespinel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1037480A JPS56109899A (en) 1980-01-31 1980-01-31 Gaseous phase growing method for magnespinel

Publications (1)

Publication Number Publication Date
JPS56109899A true JPS56109899A (en) 1981-08-31

Family

ID=11748357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1037480A Pending JPS56109899A (en) 1980-01-31 1980-01-31 Gaseous phase growing method for magnespinel

Country Status (1)

Country Link
JP (1) JPS56109899A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62137845A (en) * 1985-12-12 1987-06-20 Agency Of Ind Science & Technol Magnesia-spinnel-film forming apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62137845A (en) * 1985-12-12 1987-06-20 Agency Of Ind Science & Technol Magnesia-spinnel-film forming apparatus

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