JPS568814A - Epitaxial growth of silicon under reduced pressure - Google Patents

Epitaxial growth of silicon under reduced pressure

Info

Publication number
JPS568814A
JPS568814A JP8360679A JP8360679A JPS568814A JP S568814 A JPS568814 A JP S568814A JP 8360679 A JP8360679 A JP 8360679A JP 8360679 A JP8360679 A JP 8360679A JP S568814 A JPS568814 A JP S568814A
Authority
JP
Japan
Prior art keywords
reaction tube
wafers
gas
epitaxial layer
supply port
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8360679A
Other languages
Japanese (ja)
Inventor
Masakazu Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8360679A priority Critical patent/JPS568814A/en
Publication of JPS568814A publication Critical patent/JPS568814A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To form a silicon epitaxial layer having uniform thickness for wafers by a method wherein an inner tube, whose tubular wall area is reduced as it extends across the reaction tube from a rection gas supply port, is provided between a reaction tube and a substrate wafer. CONSTITUTION:A plurality of substrate wafers 7 are disposed at predetermined intervals substantially intersecting perpendicularly the axis of the reaction tube 2 of reduced internal pressure. Reaction gas is supplied to the wafers 7 from the gas supply port 1 of the reaction tube 2 whereby the wafers are resistance-heated by the gas. The gas causes a silicon epitaxial layer to grow on the wafer 7, and is then exhausted from a gas exhaust port 4. An inner tube 5 whose tubular wall area is reduced as it traverses the reaction tube 2 along its axis from the gas supply port 1, is provided between the reaction tube 2 and the wafer 7, thereby forming a silicon epitaxial layer having uniform thickness for the respective wafers 7.
JP8360679A 1979-07-02 1979-07-02 Epitaxial growth of silicon under reduced pressure Pending JPS568814A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8360679A JPS568814A (en) 1979-07-02 1979-07-02 Epitaxial growth of silicon under reduced pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8360679A JPS568814A (en) 1979-07-02 1979-07-02 Epitaxial growth of silicon under reduced pressure

Publications (1)

Publication Number Publication Date
JPS568814A true JPS568814A (en) 1981-01-29

Family

ID=13807136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8360679A Pending JPS568814A (en) 1979-07-02 1979-07-02 Epitaxial growth of silicon under reduced pressure

Country Status (1)

Country Link
JP (1) JPS568814A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933847A (en) * 1982-08-18 1984-02-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5933846A (en) * 1982-08-18 1984-02-23 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933847A (en) * 1982-08-18 1984-02-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5933846A (en) * 1982-08-18 1984-02-23 Mitsubishi Electric Corp Manufacture of semiconductor device

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