Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP4095577ApriorityCriticalpatent/JPS53126261A/en
Publication of JPS53126261ApublicationCriticalpatent/JPS53126261A/en
PURPOSE: To reduce variations and perform epitaxial growth on plural substrates by turning substrate holders to move the substrates onto the circumference of a section perpendicular to gas flow.
COPYRIGHT: (C)1978,JPO&Japio
JP4095577A1977-04-121977-04-12Epitaxial vapor growth method of semiconductor
PendingJPS53126261A
(en)