JPS537171A - Vapor phase growth apparatus - Google Patents

Vapor phase growth apparatus

Info

Publication number
JPS537171A
JPS537171A JP8214576A JP8214576A JPS537171A JP S537171 A JPS537171 A JP S537171A JP 8214576 A JP8214576 A JP 8214576A JP 8214576 A JP8214576 A JP 8214576A JP S537171 A JPS537171 A JP S537171A
Authority
JP
Japan
Prior art keywords
vapor phase
phase growth
growth apparatus
making
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8214576A
Other languages
Japanese (ja)
Inventor
Masaki Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8214576A priority Critical patent/JPS537171A/en
Publication of JPS537171A publication Critical patent/JPS537171A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585—Compression of gas before it reaches the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain an epitaxial growth layer of a uniform thickness by making the sectional area of the passage for vapor phase growing gas in a reaction tube smaller thereby making the velocity of flow higher as it approcahes to the down flow side of the gas flow.
JP8214576A 1976-07-09 1976-07-09 Vapor phase growth apparatus Pending JPS537171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8214576A JPS537171A (en) 1976-07-09 1976-07-09 Vapor phase growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8214576A JPS537171A (en) 1976-07-09 1976-07-09 Vapor phase growth apparatus

Publications (1)

Publication Number Publication Date
JPS537171A true JPS537171A (en) 1978-01-23

Family

ID=13766254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8214576A Pending JPS537171A (en) 1976-07-09 1976-07-09 Vapor phase growth apparatus

Country Status (1)

Country Link
JP (1) JPS537171A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0229633A2 (en) * 1986-01-08 1987-07-22 Gregory A. Roche Apparatus and method for laser-induced chemical vapor deposition
JP2010138041A (en) * 2008-12-12 2010-06-24 Sumitomo Electric Ind Ltd Film formation apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0229633A2 (en) * 1986-01-08 1987-07-22 Gregory A. Roche Apparatus and method for laser-induced chemical vapor deposition
EP0229633A3 (en) * 1986-01-08 1988-09-14 Gregory A. Roche Apparatus and method for laser-induced chemical vapor deposition
JP2010138041A (en) * 2008-12-12 2010-06-24 Sumitomo Electric Ind Ltd Film formation apparatus

Similar Documents

Publication Publication Date Title
JPS537171A (en) Vapor phase growth apparatus
JPS5260570A (en) Vapor phase growing device
JPS52149064A (en) Device for ipitaxial growth
JPS5398775A (en) Gas phase growth unit
JPS53108389A (en) Manufacture for semiconductor device
JPS52124859A (en) Continuous vapor phase growth apparatus
JPS5384458A (en) Vapor growth method
JPS5358761A (en) Vapor phase growth apparatus
JPS53105370A (en) Vapor phase growing unit
JPS5372569A (en) Vapor growing device
JPS52115170A (en) Semiconductor vapor growing method
JPS53148278A (en) Method and apparatus of vapor phase growth of compound semiconductor crystals
JPS5354179A (en) Gas phase growing apparatus for multilayer crystal
JPS5249989A (en) Growth method of liquid phase epitaxial
JPS52140274A (en) Pressure-reduction vapor growth method
JPS5381488A (en) Gas phase growth apparatus
JPS533062A (en) Semiconductor crystal growth apparatus
JPS5244166A (en) Method of growing semiconductor
JPS5263669A (en) Device for production of semiconductors
JPS52117062A (en) Liquid phase epitaxial growth process
JPS52127065A (en) Gas phase growing method of semiconductor and its device
JPS51139774A (en) Liquid phase growing device
JPS5248466A (en) Method for vapor growth of semiconductor crystal
JPS5354180A (en) Gas phase growing apparatus for multilayer crystal
JPS5489565A (en) Gas phase growing method of semiconductor