JPS5260570A - Vapor phase growing device - Google Patents

Vapor phase growing device

Info

Publication number
JPS5260570A
JPS5260570A JP13570175A JP13570175A JPS5260570A JP S5260570 A JPS5260570 A JP S5260570A JP 13570175 A JP13570175 A JP 13570175A JP 13570175 A JP13570175 A JP 13570175A JP S5260570 A JPS5260570 A JP S5260570A
Authority
JP
Japan
Prior art keywords
vapor phase
growing device
phase growing
multiplicity
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13570175A
Other languages
Japanese (ja)
Inventor
Takatoshi Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13570175A priority Critical patent/JPS5260570A/en
Publication of JPS5260570A publication Critical patent/JPS5260570A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45506—Turbulent flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles

Abstract

PURPOSE:To obtain a vapor phase growing device that can obtain a multiplicity of grown layers of a uniform thickness by completely offsetting the flow of raw material gas once from normal direction of a substrate.
JP13570175A 1975-11-13 1975-11-13 Vapor phase growing device Pending JPS5260570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13570175A JPS5260570A (en) 1975-11-13 1975-11-13 Vapor phase growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13570175A JPS5260570A (en) 1975-11-13 1975-11-13 Vapor phase growing device

Publications (1)

Publication Number Publication Date
JPS5260570A true JPS5260570A (en) 1977-05-19

Family

ID=15157864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13570175A Pending JPS5260570A (en) 1975-11-13 1975-11-13 Vapor phase growing device

Country Status (1)

Country Link
JP (1) JPS5260570A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618413A (en) * 1979-07-23 1981-02-21 Toshiba Corp Apparatus for vapor growth of compound semiconductor
JPS6076115A (en) * 1983-10-01 1985-04-30 Ulvac Corp Heating device of substrate
JPS6071137U (en) * 1983-10-19 1985-05-20 富士通株式会社 Plasma CVD equipment
EP0283007A2 (en) * 1987-03-17 1988-09-21 Fujitsu Limited Chemical vapour deposition apparatus having a perforated head
JPH07273036A (en) * 1994-03-30 1995-10-20 Uchu Kankyo Riyou Kenkyusho:Kk Formation of compound semiconductor crystal
US5620523A (en) * 1994-04-11 1997-04-15 Canon Sales Co., Inc. Apparatus for forming film
JP2009514715A (en) * 2003-07-01 2009-04-09 コンチネンタル・テベス・アーゲー・ウント・コンパニー・オーハーゲー Brake booster

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618413A (en) * 1979-07-23 1981-02-21 Toshiba Corp Apparatus for vapor growth of compound semiconductor
JPS6076115A (en) * 1983-10-01 1985-04-30 Ulvac Corp Heating device of substrate
JPS6071137U (en) * 1983-10-19 1985-05-20 富士通株式会社 Plasma CVD equipment
EP0283007A2 (en) * 1987-03-17 1988-09-21 Fujitsu Limited Chemical vapour deposition apparatus having a perforated head
JPH07273036A (en) * 1994-03-30 1995-10-20 Uchu Kankyo Riyou Kenkyusho:Kk Formation of compound semiconductor crystal
US5620523A (en) * 1994-04-11 1997-04-15 Canon Sales Co., Inc. Apparatus for forming film
JP2009514715A (en) * 2003-07-01 2009-04-09 コンチネンタル・テベス・アーゲー・ウント・コンパニー・オーハーゲー Brake booster
JP4908205B2 (en) * 2003-07-01 2012-04-04 コンチネンタル・テベス・アーゲー・ウント・コンパニー・オーハーゲー Brake booster

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