JPS5248466A - Method for vapor growth of semiconductor crystal - Google Patents

Method for vapor growth of semiconductor crystal

Info

Publication number
JPS5248466A
JPS5248466A JP12472575A JP12472575A JPS5248466A JP S5248466 A JPS5248466 A JP S5248466A JP 12472575 A JP12472575 A JP 12472575A JP 12472575 A JP12472575 A JP 12472575A JP S5248466 A JPS5248466 A JP S5248466A
Authority
JP
Japan
Prior art keywords
semiconductor crystal
vapor growth
substrate
tilting
degrees
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12472575A
Other languages
Japanese (ja)
Inventor
Yoshifumi Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12472575A priority Critical patent/JPS5248466A/en
Publication of JPS5248466A publication Critical patent/JPS5248466A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To let an epitaxial layer of a uniform thickness grow in vapor phase on a large diameter substrate, by tilting the substrate 15-45 degrees on the raw material side in a reaction tube.
JP12472575A 1975-10-16 1975-10-16 Method for vapor growth of semiconductor crystal Pending JPS5248466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12472575A JPS5248466A (en) 1975-10-16 1975-10-16 Method for vapor growth of semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12472575A JPS5248466A (en) 1975-10-16 1975-10-16 Method for vapor growth of semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS5248466A true JPS5248466A (en) 1977-04-18

Family

ID=14892550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12472575A Pending JPS5248466A (en) 1975-10-16 1975-10-16 Method for vapor growth of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5248466A (en)

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