JPS5277897A - Production of gallium phosphide crystal - Google Patents

Production of gallium phosphide crystal

Info

Publication number
JPS5277897A
JPS5277897A JP15424175A JP15424175A JPS5277897A JP S5277897 A JPS5277897 A JP S5277897A JP 15424175 A JP15424175 A JP 15424175A JP 15424175 A JP15424175 A JP 15424175A JP S5277897 A JPS5277897 A JP S5277897A
Authority
JP
Japan
Prior art keywords
gallium phosphide
production
phosphide crystal
crystal
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15424175A
Other languages
Japanese (ja)
Other versions
JPS5946919B2 (en
Inventor
Akihito Tsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP15424175A priority Critical patent/JPS5946919B2/en
Publication of JPS5277897A publication Critical patent/JPS5277897A/en
Publication of JPS5946919B2 publication Critical patent/JPS5946919B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a substrate of gallium photsphide crystal by growing epitaxially the gallium phosphide layer on the substrate of the same crystal via a specified epitaxial layer which can be removed by etching, followed by removing the specified layer after the growth.
JP15424175A 1975-12-24 1975-12-24 Gallium linkage Expired JPS5946919B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15424175A JPS5946919B2 (en) 1975-12-24 1975-12-24 Gallium linkage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15424175A JPS5946919B2 (en) 1975-12-24 1975-12-24 Gallium linkage

Publications (2)

Publication Number Publication Date
JPS5277897A true JPS5277897A (en) 1977-06-30
JPS5946919B2 JPS5946919B2 (en) 1984-11-15

Family

ID=15579912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15424175A Expired JPS5946919B2 (en) 1975-12-24 1975-12-24 Gallium linkage

Country Status (1)

Country Link
JP (1) JPS5946919B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6149727U (en) * 1984-09-05 1986-04-03

Also Published As

Publication number Publication date
JPS5946919B2 (en) 1984-11-15

Similar Documents

Publication Publication Date Title
IE34306L (en) Epitaxial growth of semiconductor crystals.
JPS5493378A (en) Manufacture for semiconductor device
JPS5277897A (en) Production of gallium phosphide crystal
JPS5271171A (en) Production of epitaxial wafer
JPS5245273A (en) Method for production of semiconductor device
JPS53104162A (en) Forming method for epitaxial layer on semiconductor wafer
JPS5344170A (en) Production of semiconductor device
JPS5724591A (en) Manufacture of semiconductor laser device
JPS5386571A (en) Production of self-alignment type crystal
JPS5244193A (en) Epitaxial growth method
JPS5328374A (en) Wafer production
JPS52127500A (en) Production of linb1-taxo3 single crystal film
JPS52109866A (en) Liquid epitaxial growing method
JPS52155189A (en) Multiple layer crystal growth
JPS52116070A (en) Process for lqiuid phase epitaxial growth
JPS51140474A (en) Method of fabricating semiconductor crystal
JPS5262698A (en) Working method of garnet crystal
JPS5335699A (en) Growing method for heteroepitaxial membrane
JPS52146556A (en) Silicon crystal growth method
JPS5286775A (en) Bebeling method for semiconductor substrate
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS5254385A (en) Production of semiconductor light emitting device
JPS5391571A (en) Growth method for semiconductor crystal
JPS5319777A (en) Semiconductor laser
JPS51111057A (en) Crystal growing device