JPS5344170A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5344170A
JPS5344170A JP11962776A JP11962776A JPS5344170A JP S5344170 A JPS5344170 A JP S5344170A JP 11962776 A JP11962776 A JP 11962776A JP 11962776 A JP11962776 A JP 11962776A JP S5344170 A JPS5344170 A JP S5344170A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
crystallinity
temperature
lowee
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11962776A
Other languages
Japanese (ja)
Inventor
Motoo Nakano
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11962776A priority Critical patent/JPS5344170A/en
Publication of JPS5344170A publication Critical patent/JPS5344170A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To improve crystallinity by ion implanting an inert substance to the silicon layer epitaxially grown on sapphire to break its crystallinity thereafter heat treating and recrystallizing said layer at a temperature lowee than the crystal growth temperature.
JP11962776A 1976-10-05 1976-10-05 Production of semiconductor device Pending JPS5344170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11962776A JPS5344170A (en) 1976-10-05 1976-10-05 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11962776A JPS5344170A (en) 1976-10-05 1976-10-05 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5344170A true JPS5344170A (en) 1978-04-20

Family

ID=14766113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11962776A Pending JPS5344170A (en) 1976-10-05 1976-10-05 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5344170A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55146936A (en) * 1979-05-04 1980-11-15 Chiyou Lsi Gijutsu Kenkyu Kumiai Treatment of semiconductor film
JPS56125298A (en) * 1980-01-30 1981-10-01 Siemens Ag Growth of metal layer or alloy layer on substrate
JPS58110208A (en) * 1981-12-24 1983-06-30 株式会社　石川時鉄工所 Roll molding method and device for wet ceramic raw material rough forging
US4837172A (en) * 1986-07-18 1989-06-06 Matsushita Electric Industrial Co., Ltd. Method for removing impurities existing in semiconductor substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038838A (en) * 1973-08-02 1975-04-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038838A (en) * 1973-08-02 1975-04-10

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55146936A (en) * 1979-05-04 1980-11-15 Chiyou Lsi Gijutsu Kenkyu Kumiai Treatment of semiconductor film
JPS56125298A (en) * 1980-01-30 1981-10-01 Siemens Ag Growth of metal layer or alloy layer on substrate
JPS58110208A (en) * 1981-12-24 1983-06-30 株式会社　石川時鉄工所 Roll molding method and device for wet ceramic raw material rough forging
JPS6017684B2 (en) * 1981-12-24 1985-05-04 株式会社 石川時鉄工所 Roll forming method and device for wet ceramic raw material wasteland having partially large protrusions
US4837172A (en) * 1986-07-18 1989-06-06 Matsushita Electric Industrial Co., Ltd. Method for removing impurities existing in semiconductor substrate

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