JPS55146936A - Treatment of semiconductor film - Google Patents

Treatment of semiconductor film

Info

Publication number
JPS55146936A
JPS55146936A JP5422279A JP5422279A JPS55146936A JP S55146936 A JPS55146936 A JP S55146936A JP 5422279 A JP5422279 A JP 5422279A JP 5422279 A JP5422279 A JP 5422279A JP S55146936 A JPS55146936 A JP S55146936A
Authority
JP
Japan
Prior art keywords
layer
defect
single crystal
etching
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5422279A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Mitsuru Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP5422279A priority Critical patent/JPS55146936A/en
Publication of JPS55146936A publication Critical patent/JPS55146936A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To obtain a defect-free semiconductor layer, by driving ion into single crystal semiconductor film on a dielectric body, providing heat treatment on it and removing the surface. CONSTITUTION:By providing a single crystal epitaxial layer 2, which has (110) crystallized surface, on a sapphire substrate 1 having a particular crystallized surface, and driving into the surface Si ion in such a manner that it has its center at the depth of approximately 0.2mu, a single crystal 3 is left on the surface and an amorphous Si layer 4 is formed. If it is annealed, a layer having a depth of approximately 500Angstrom from the surface becomes the single crystal 3 having crystal defect, but deeper section becomes a defect-free layer 10. By removing the layer 3 by etching, however, it is possible to obtain an SOS substrate 12 having a defect-free layer. Further, it is also possible to execute oxidation treatment after annealing and to remove this oxide film by etching. Or, it may be possible, after annealing, to drive the ion shallower than the first one and execute etching after another annealing.
JP5422279A 1979-05-04 1979-05-04 Treatment of semiconductor film Pending JPS55146936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5422279A JPS55146936A (en) 1979-05-04 1979-05-04 Treatment of semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5422279A JPS55146936A (en) 1979-05-04 1979-05-04 Treatment of semiconductor film

Publications (1)

Publication Number Publication Date
JPS55146936A true JPS55146936A (en) 1980-11-15

Family

ID=12964500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5422279A Pending JPS55146936A (en) 1979-05-04 1979-05-04 Treatment of semiconductor film

Country Status (1)

Country Link
JP (1) JPS55146936A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59502047A (en) * 1982-11-15 1984-12-06 ヒユ−ズ・エアクラフト・カンパニ− Semiconductor epitaxial phase and growth method with controlled defect concentration cross section for mixed epitaxial semiconductors on insulating mixed substrates
JPS6184075A (en) * 1984-09-18 1986-04-28 イギリス国 Photovoltaic solar cell
JPS63142655A (en) * 1986-11-26 1988-06-15 エイ・ティ・アンド・ティ・コーポレーション Manufacture of device containing buried sio2 layer
EP1037272A1 (en) * 1997-06-19 2000-09-20 Asahi Kasei Kogyo Kabushiki Kaisha Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
KR100972605B1 (en) * 2008-03-19 2010-07-28 동국대학교 산학협력단 Method for preparing a silicon on sapphire thin film and the silicon on sapphire thin film prepared by the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344170A (en) * 1976-10-05 1978-04-20 Fujitsu Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344170A (en) * 1976-10-05 1978-04-20 Fujitsu Ltd Production of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59502047A (en) * 1982-11-15 1984-12-06 ヒユ−ズ・エアクラフト・カンパニ− Semiconductor epitaxial phase and growth method with controlled defect concentration cross section for mixed epitaxial semiconductors on insulating mixed substrates
JPS6184075A (en) * 1984-09-18 1986-04-28 イギリス国 Photovoltaic solar cell
JPS63142655A (en) * 1986-11-26 1988-06-15 エイ・ティ・アンド・ティ・コーポレーション Manufacture of device containing buried sio2 layer
EP1037272A1 (en) * 1997-06-19 2000-09-20 Asahi Kasei Kogyo Kabushiki Kaisha Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
US6528387B1 (en) 1997-06-19 2003-03-04 Asahi Kasei Kabushiki Kaisha SOI substrate and process for preparing the same, and semiconductor device and process for preparing the same
EP1037272A4 (en) * 1997-06-19 2004-07-28 Asahi Chemical Ind Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
KR100972605B1 (en) * 2008-03-19 2010-07-28 동국대학교 산학협력단 Method for preparing a silicon on sapphire thin film and the silicon on sapphire thin film prepared by the same

Similar Documents

Publication Publication Date Title
JPS55115341A (en) Manufacture of semiconductor device
KR890012402A (en) Manufacturing Method of Semiconductor Device
ES466901A1 (en) Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation
EP0663689A3 (en) Diffusion process for integrated circuits
JPS55146936A (en) Treatment of semiconductor film
US3592707A (en) Precision masking using silicon nitride and silicon oxide
JPS5635434A (en) Manufacturing of semiconductor device
JPS57130448A (en) Manufacture of semiconductor device
JPS61289620A (en) Heat treatment for semiconductor thin film
JPS57194525A (en) Manufacture of semiconductor device
JPS5687339A (en) Manufacture of semiconductor device
KR970008580A (en) Transistor manufacturing method of semiconductor device
JPS54130883A (en) Production of semiconductor device
JPS57106076A (en) Manufacture of semiconductor integrated circuit device
JPS54124687A (en) Production of semiconductor device
JPH06296003A (en) Manufacture of semiconductor device
JPS55153343A (en) Semiconductor device and its manufacture
JPS6477115A (en) Manufacture of semiconductor device
JPS56152234A (en) Manufacture of semiconductor device
JPS6446976A (en) Manufacture of semiconductor integrated circuit device
JPS5565438A (en) Semiconductor substrate treatment
GB1536763A (en) Manufacture of semiconductor body
JPH06252116A (en) Formation of game insulating film
JPS6442862A (en) Manufacture of high-withstand voltage mos semiconductor device
JPH06349819A (en) Formation of area for isolating elements