KR970008580A - Transistor manufacturing method of semiconductor device - Google Patents
Transistor manufacturing method of semiconductor device Download PDFInfo
- Publication number
- KR970008580A KR970008580A KR1019950021557A KR19950021557A KR970008580A KR 970008580 A KR970008580 A KR 970008580A KR 1019950021557 A KR1019950021557 A KR 1019950021557A KR 19950021557 A KR19950021557 A KR 19950021557A KR 970008580 A KR970008580 A KR 970008580A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- polysilicon layer
- etched
- source
- transistor
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
본 발명은 반도체 소자의 트랜지스터 제조방법이 개시된다.The present invention discloses a transistor manufacturing method of a semiconductor device.
본 발명은 게이트 전극 마스크 작업으로 폴리실리콘층을 1차 식각하고, 1차 식각으로 형성된 식각면에 스페이서를 형성한 후 2차 식각하여 게이트 전극을 완성하고, 소오스/드레인 불순물 주입 공정을 실시하여 LDD구조의 트랜지스터가 제조된다.According to the present invention, a polysilicon layer is firstly etched by a gate electrode mask operation, a spacer is formed on an etch surface formed by the first etch, and then secondly is etched to complete a gate electrode, and a source / drain impurity implantation process is performed to perform LDD. A transistor of the structure is manufactured.
따라서, 본 발명은 한번의 소오스/드레인 불순물 주입공정으로 소오스/드레인 영역과 LDD영역을 동시에 형성시켜 LDD구조의 트랜지스터를 제조하므로 공정을 단순화 할 수 있으며, 특히 LDD 영역이 폴리실리콘으로 완전히 덮혀지게 되므로서 게이트 전압으로 용이하게 조절 가능하여 핫 캐리어에 의한 소자의 신뢰성 저하방지 및 전류 구동 능력을 향상시킬 수 있다.Therefore, the present invention can simplify the process by forming a transistor having an LDD structure by simultaneously forming a source / drain region and an LDD region in a single source / drain impurity implantation process, in particular, since the LDD region is completely covered with polysilicon. It can be easily adjusted by the gate voltage to prevent the device from being degraded by hot carriers and improve the current driving capability.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1C 내지 제1D도는 본 발명에 따른 반도체 소자의 트랜지스터 제조방법을 설명하기 위한 소자의 단면도.1C to 1D are cross-sectional views of a device for explaining a transistor manufacturing method of a semiconductor device according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950021557A KR970008580A (en) | 1995-07-21 | 1995-07-21 | Transistor manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950021557A KR970008580A (en) | 1995-07-21 | 1995-07-21 | Transistor manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
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KR970008580A true KR970008580A (en) | 1997-02-24 |
Family
ID=66541548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019950021557A KR970008580A (en) | 1995-07-21 | 1995-07-21 | Transistor manufacturing method of semiconductor device |
Country Status (1)
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KR (1) | KR970008580A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990057347A (en) * | 1997-12-29 | 1999-07-15 | 김영환 | Manufacturing method of semiconductor device |
KR20030002250A (en) * | 2001-06-30 | 2003-01-08 | 주식회사 하이닉스반도체 | Method of Manufacturing MOSFET |
KR100469147B1 (en) * | 1997-12-29 | 2005-04-06 | 주식회사 하이닉스반도체 | Manufacturing method of semiconductor device |
KR100511097B1 (en) * | 2003-07-21 | 2005-08-30 | 매그나칩 반도체 유한회사 | Method for manufacturing semiconductor device to improve hot carrier effect |
KR100881387B1 (en) * | 2002-07-11 | 2009-02-02 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
-
1995
- 1995-07-21 KR KR1019950021557A patent/KR970008580A/en not_active Application Discontinuation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990057347A (en) * | 1997-12-29 | 1999-07-15 | 김영환 | Manufacturing method of semiconductor device |
KR100469147B1 (en) * | 1997-12-29 | 2005-04-06 | 주식회사 하이닉스반도체 | Manufacturing method of semiconductor device |
KR20030002250A (en) * | 2001-06-30 | 2003-01-08 | 주식회사 하이닉스반도체 | Method of Manufacturing MOSFET |
KR100881387B1 (en) * | 2002-07-11 | 2009-02-02 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
KR100511097B1 (en) * | 2003-07-21 | 2005-08-30 | 매그나칩 반도체 유한회사 | Method for manufacturing semiconductor device to improve hot carrier effect |
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