KR970004037A - Transistor manufacturing method of semiconductor device - Google Patents

Transistor manufacturing method of semiconductor device Download PDF

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Publication number
KR970004037A
KR970004037A KR1019950017287A KR19950017287A KR970004037A KR 970004037 A KR970004037 A KR 970004037A KR 1019950017287 A KR1019950017287 A KR 1019950017287A KR 19950017287 A KR19950017287 A KR 19950017287A KR 970004037 A KR970004037 A KR 970004037A
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KR
South Korea
Prior art keywords
oxide film
low voltage
region
semiconductor device
transistor
Prior art date
Application number
KR1019950017287A
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Korean (ko)
Inventor
장상환
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950017287A priority Critical patent/KR970004037A/en
Publication of KR970004037A publication Critical patent/KR970004037A/en

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Abstract

본 발명은 반도체 소자의 트랜지스터 제조방법에 관한 것으로, 게이트절연막의 질을 향상시키기 위하여 고전압용 트랜지스터의 게이트절연막을 산화막 및 질화막으로 형성하므로써 소자의 신뢰성을 향상시킬 수 있도록 한 반도체 소자의 트랜지스터 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a transistor of a semiconductor device, and to forming a gate insulating film of a high voltage transistor as an oxide film and a nitride film in order to improve the quality of a gate insulating film. It is about.

Description

반도체 소자의 트랜지스터 제조방법Transistor manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A 내지 제1E도는 본 발명에 따른 반도체 소자의 트랜지스터 제조방법을 설명하기 위한 소자의 단면도.1A to 1E are cross-sectional views of a device for explaining a transistor manufacturing method of a semiconductor device according to the present invention.

Claims (1)

반도체 소자의 트랜지스터 제조방법에 있어서, 고전압 및 저전압용 트랜지스터가 형성될 지역이 필드산화막에 의해 각각 분리된 실리콘기판상에 산화막 및 질화막을 순차적으로 형성하는 단계와, 상기 단계로부터 소정의 마스크를 이용한 사진 및 식각공정으로 상기 저전압용 트랜지스터가 형성될 지역의 실리콘기판이 노출되도록 상기 질화막 및 산화막을 순차적으로 패터닝하는 단계와, 상기 단계로부터 산화공정을 실시하여 상기 저전압용 트랜지스터가 형성될 지역의 노출된 실리콘기판상에 산화막을 형성한 후 전체 상부면에 폴리실리콘층을 형성하는 단계와, 상기 단계로부터 게이트 전극용 마스크를 이용한 사진 및 식각공정으로 상기 폴리실리콘층을 패터닝하여 상기 고전압 및 저전압용 트랜지스터가 형성될 지역에 게이트전극을 각각 형성시키는 단계와, 상기단계로부터 접합영역을 형성하기 위하여 노출된 실리콘기판에 불순물이온을 주입하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.A method of manufacturing a transistor of a semiconductor device, comprising the steps of sequentially forming an oxide film and a nitride film on a silicon substrate in which regions for high and low voltage transistors are to be formed, respectively, separated by a field oxide film; And sequentially patterning the nitride film and the oxide film to expose the silicon substrate of the region where the low voltage transistor is to be formed by an etching process, and performing an oxidation process from the step to expose the silicon of the region where the low voltage transistor is to be formed. Forming a polysilicon layer on the entire upper surface after forming an oxide film on the substrate, and patterning the polysilicon layer by a photolithography and etching process using a mask for a gate electrode from the step to form the high voltage and low voltage transistors. Form gate electrodes in each region And implanting impurity ions into the exposed silicon substrate to form a junction region from the step. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950017287A 1995-06-24 1995-06-24 Transistor manufacturing method of semiconductor device KR970004037A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950017287A KR970004037A (en) 1995-06-24 1995-06-24 Transistor manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017287A KR970004037A (en) 1995-06-24 1995-06-24 Transistor manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970004037A true KR970004037A (en) 1997-01-29

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KR1019950017287A KR970004037A (en) 1995-06-24 1995-06-24 Transistor manufacturing method of semiconductor device

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KR (1) KR970004037A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100440263B1 (en) * 2002-10-29 2004-07-15 주식회사 하이닉스반도체 Transistor in a semiconductor device and a method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100440263B1 (en) * 2002-10-29 2004-07-15 주식회사 하이닉스반도체 Transistor in a semiconductor device and a method of manufacturing the same

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