KR960026937A - Semiconductor device manufacturing method - Google Patents
Semiconductor device manufacturing method Download PDFInfo
- Publication number
- KR960026937A KR960026937A KR1019940039483A KR19940039483A KR960026937A KR 960026937 A KR960026937 A KR 960026937A KR 1019940039483 A KR1019940039483 A KR 1019940039483A KR 19940039483 A KR19940039483 A KR 19940039483A KR 960026937 A KR960026937 A KR 960026937A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- semiconductor device
- photoresist pattern
- manufacturing
- ion implantation
- Prior art date
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 반도체 소자의 제조방법에 관한 것으로, 산화막 스페이서 없이 N+접합영역을 형성한 다음 LDD 이온주입영역 형성하므로써 제조공정을 간단히 할 수 있고 또한 공정결함을 제거할 수 있는 반도체 소자 제조방법이 개시된다.The present invention relates to a method for manufacturing a semiconductor device, and a semiconductor device manufacturing method which can simplify the manufacturing process and eliminate process defects by forming an N + junction region without an oxide film spacer and then forming an LDD ion implantation region. do.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A내지 제1D도는 본 발명에 따른 반도체 소자 제조방법으로 설명하기 위한 단면도.1A to 1D are cross-sectional views for explaining the semiconductor device manufacturing method according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940039483A KR960026937A (en) | 1994-12-30 | 1994-12-30 | Semiconductor device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940039483A KR960026937A (en) | 1994-12-30 | 1994-12-30 | Semiconductor device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960026937A true KR960026937A (en) | 1996-07-22 |
Family
ID=66647818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940039483A KR960026937A (en) | 1994-12-30 | 1994-12-30 | Semiconductor device manufacturing method |
Country Status (1)
Country | Link |
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KR (1) | KR960026937A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100506878B1 (en) * | 1997-12-29 | 2005-10-19 | 주식회사 하이닉스반도체 | Manufacturing method of MOS field effect transistor |
-
1994
- 1994-12-30 KR KR1019940039483A patent/KR960026937A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100506878B1 (en) * | 1997-12-29 | 2005-10-19 | 주식회사 하이닉스반도체 | Manufacturing method of MOS field effect transistor |
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