FR2189876A1 - Radiation resistant silicon wafers - and solar cells made therefrom for use in space - Google Patents

Radiation resistant silicon wafers - and solar cells made therefrom for use in space

Info

Publication number
FR2189876A1
FR2189876A1 FR7222797A FR7222797A FR2189876A1 FR 2189876 A1 FR2189876 A1 FR 2189876A1 FR 7222797 A FR7222797 A FR 7222797A FR 7222797 A FR7222797 A FR 7222797A FR 2189876 A1 FR2189876 A1 FR 2189876A1
Authority
FR
France
Prior art keywords
solar cells
space
silicon wafers
made therefrom
cells made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7222797A
Other languages
French (fr)
Other versions
FR2189876B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7222797A priority Critical patent/FR2189876A1/en
Publication of FR2189876A1 publication Critical patent/FR2189876A1/en
Application granted granted Critical
Publication of FR2189876B1 publication Critical patent/FR2189876B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The silicon is made resistant to weak radiation, e.g. electrons, protom of several MeV, by introducing uniformly into the structure atoms of tin, lead or carbon. This can be effected either during the growth of the Si monocrystal, by addition of Sn, Pb or C to the melt or by introduction of these atoms into the structure of an epitaxially grown layer on a substrate of Si. The dopants increase the life of carriers in the semiconductor. The wafers so made are used in making solar cells for space technology.
FR7222797A 1972-06-23 1972-06-23 Radiation resistant silicon wafers - and solar cells made therefrom for use in space Granted FR2189876A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7222797A FR2189876A1 (en) 1972-06-23 1972-06-23 Radiation resistant silicon wafers - and solar cells made therefrom for use in space

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7222797A FR2189876A1 (en) 1972-06-23 1972-06-23 Radiation resistant silicon wafers - and solar cells made therefrom for use in space

Publications (2)

Publication Number Publication Date
FR2189876A1 true FR2189876A1 (en) 1974-01-25
FR2189876B1 FR2189876B1 (en) 1974-12-27

Family

ID=9100713

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7222797A Granted FR2189876A1 (en) 1972-06-23 1972-06-23 Radiation resistant silicon wafers - and solar cells made therefrom for use in space

Country Status (1)

Country Link
FR (1) FR2189876A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2457914A1 (en) * 1979-05-30 1980-12-26 Siemens Ag PROCESS FOR THE MANUFACTURE OF SILICON HAVING SEMICONDUCTOR PROPERTIES
EP0155576A1 (en) * 1984-03-02 1985-09-25 Hitachi, Ltd. Radiation-resistant semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390020A (en) * 1964-03-17 1968-06-25 Mandelkorn Joseph Semiconductor material and method of making same
NL6917221A (en) * 1968-11-19 1970-05-21
DE2014903A1 (en) * 1969-03-28 1970-10-01 Matsushita Electronics Corporation Kadoma City, Osaka (Japan) Low noise semiconductor device and method of manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390020A (en) * 1964-03-17 1968-06-25 Mandelkorn Joseph Semiconductor material and method of making same
NL6917221A (en) * 1968-11-19 1970-05-21
DE2014903A1 (en) * 1969-03-28 1970-10-01 Matsushita Electronics Corporation Kadoma City, Osaka (Japan) Low noise semiconductor device and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE JAPONAISE "JAPANESE JOURNAL OF APPLIED PHYSICS", VOL 9, SEPTEMBRE 1970, NO. 9, "EFFECTS OF IMPURITIES OF THE RADIATION DAMAGE AND ANNEALING BEHAVIOR OF SI SOLAR CELLS", A. USAMI PAGES 1063-1069 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2457914A1 (en) * 1979-05-30 1980-12-26 Siemens Ag PROCESS FOR THE MANUFACTURE OF SILICON HAVING SEMICONDUCTOR PROPERTIES
EP0155576A1 (en) * 1984-03-02 1985-09-25 Hitachi, Ltd. Radiation-resistant semiconductor device

Also Published As

Publication number Publication date
FR2189876B1 (en) 1974-12-27

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Legal Events

Date Code Title Description
ST Notification of lapse