FR2386142A1 - Thin film semiconductor solar cell - with specific semiconductor coating, preventing surface recombination of charge carriers - Google Patents

Thin film semiconductor solar cell - with specific semiconductor coating, preventing surface recombination of charge carriers

Info

Publication number
FR2386142A1
FR2386142A1 FR7808283A FR7808283A FR2386142A1 FR 2386142 A1 FR2386142 A1 FR 2386142A1 FR 7808283 A FR7808283 A FR 7808283A FR 7808283 A FR7808283 A FR 7808283A FR 2386142 A1 FR2386142 A1 FR 2386142A1
Authority
FR
France
Prior art keywords
solar cell
charge carriers
surface recombination
thin film
preventing surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7808283A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2386142A1 publication Critical patent/FR2386142A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A thin-film semiconductor solar cell consists of a substrate, carrying a monocrystalline semiconductor layer with a direct junction, which is covered by a second monocrystalline semiconductor layer. The second has a crystal structure similar to the first, with a lattice spacing differing by =1% from the frist, but with a distance of the energy bands which is >2 kT larger. Arrangement combines the excellent radiation absorption capacity of the direct-junction semiconductor with a protection against their high rate of surface recombination of charge carriers.
FR7808283A 1977-03-30 1978-03-22 Thin film semiconductor solar cell - with specific semiconductor coating, preventing surface recombination of charge carriers Withdrawn FR2386142A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772714243 DE2714243A1 (en) 1977-03-30 1977-03-30 THIN FILM SEMICONDUCTOR SOLAR CELL

Publications (1)

Publication Number Publication Date
FR2386142A1 true FR2386142A1 (en) 1978-10-27

Family

ID=6005178

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7808283A Withdrawn FR2386142A1 (en) 1977-03-30 1978-03-22 Thin film semiconductor solar cell - with specific semiconductor coating, preventing surface recombination of charge carriers

Country Status (4)

Country Link
JP (1) JPS53122393A (en)
DE (1) DE2714243A1 (en)
FR (1) FR2386142A1 (en)
IT (1) IT1093690B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0033429A2 (en) * 1980-02-01 1981-08-12 Thomson-Csf Photovoltaic cell suitable for manufacturing solar power units

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167968A (en) * 1984-09-11 1986-04-08 Sharp Corp Gaas solar cell element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0033429A2 (en) * 1980-02-01 1981-08-12 Thomson-Csf Photovoltaic cell suitable for manufacturing solar power units
EP0033429A3 (en) * 1980-02-01 1983-06-29 Thomson-Csf Photovoltaic cell suitable for manufacturing solar power units

Also Published As

Publication number Publication date
DE2714243A1 (en) 1978-10-05
IT1093690B (en) 1985-07-26
JPS53122393A (en) 1978-10-25
IT7821470A0 (en) 1978-03-22

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Legal Events

Date Code Title Description
ST Notification of lapse