ES448032A1 - Fabrication of polycrystalline solar cells on low-cost substrates - Google Patents

Fabrication of polycrystalline solar cells on low-cost substrates

Info

Publication number
ES448032A1
ES448032A1 ES448032A ES448032A ES448032A1 ES 448032 A1 ES448032 A1 ES 448032A1 ES 448032 A ES448032 A ES 448032A ES 448032 A ES448032 A ES 448032A ES 448032 A1 ES448032 A1 ES 448032A1
Authority
ES
Spain
Prior art keywords
polycrystalline silicon
solar cells
low
fabrication
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES448032A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Aeronautics and Space Administration NASA
Original Assignee
National Aeronautics and Space Administration NASA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Aeronautics and Space Administration NASA filed Critical National Aeronautics and Space Administration NASA
Publication of ES448032A1 publication Critical patent/ES448032A1/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Low-cost polycrystalline silicon solar cells supported on substrates are prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical-grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices are formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon is substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.
ES448032A 1975-05-12 1976-05-11 Fabrication of polycrystalline solar cells on low-cost substrates Expired ES448032A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/576,488 US3961997A (en) 1975-05-12 1975-05-12 Fabrication of polycrystalline solar cells on low-cost substrates

Publications (1)

Publication Number Publication Date
ES448032A1 true ES448032A1 (en) 1977-11-01

Family

ID=24304624

Family Applications (1)

Application Number Title Priority Date Filing Date
ES448032A Expired ES448032A1 (en) 1975-05-12 1976-05-11 Fabrication of polycrystalline solar cells on low-cost substrates

Country Status (8)

Country Link
US (2) US3961997A (en)
JP (1) JPS5231692A (en)
CA (1) CA1068805A (en)
DE (1) DE2620832A1 (en)
ES (1) ES448032A1 (en)
FR (1) FR2311409A1 (en)
GB (1) GB1547626A (en)
NL (1) NL7605065A (en)

Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4119744A (en) * 1975-02-07 1978-10-10 U.S. Philips Corporation Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4142195A (en) * 1976-03-22 1979-02-27 Rca Corporation Schottky barrier semiconductor device and method of making same
DE2638269C2 (en) * 1976-08-25 1983-05-26 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Process for the production of substrate-bound, large-area silicon
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
US4094751A (en) * 1976-09-30 1978-06-13 Allied Chemical Corporation Photochemical diodes
US4127424A (en) * 1976-12-06 1978-11-28 Ses, Incorporated Photovoltaic cell array
US4129463A (en) * 1977-06-29 1978-12-12 The United States Of America As Represented By The United States Department Of Energy Polycrystalline silicon semiconducting material by nuclear transmutation doping
FR2401696A1 (en) * 1977-08-31 1979-03-30 Ugine Kuhlmann METHOD FOR DEPOSITING CRYSTALLINE SILICON IN THIN FILMS ON GRAPHITE SUBSTRATES
US4124410A (en) * 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates
JPS5481091A (en) * 1977-12-12 1979-06-28 Agency Of Ind Science & Technol Plate-type silicon semiconductor and its manufacture
US4341610A (en) * 1978-06-22 1982-07-27 Schumacher John C Energy efficient process for continuous production of thin semiconductor films on metallic substrates
US4525223A (en) * 1978-09-19 1985-06-25 Noboru Tsuya Method of manufacturing a thin ribbon wafer of semiconductor material
US4330582A (en) * 1978-11-13 1982-05-18 Semix Incorporated Semicrystalline silicon products
US4402771A (en) * 1979-03-02 1983-09-06 Westinghouse Electric Corp. Substrate for silicon solar cells
US4343963A (en) * 1979-03-02 1982-08-10 Westinghouse Electric Corp. Substrate for silicon solar cells
US4213801A (en) * 1979-03-26 1980-07-22 Bell Telephone Laboratories, Incorporated Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers
FR2455362A1 (en) * 1979-04-23 1980-11-21 Labo Electronique Physique Solar cell mfr. - by depositing silicon onto carbon substrate with doped intermediate silicon carbide layer
US4332838A (en) * 1980-09-24 1982-06-01 Wegrzyn James E Particulate thin film fabrication process
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
US4778478A (en) * 1981-11-16 1988-10-18 University Of Delaware Method of making thin film photovoltaic solar cell
US4482913A (en) * 1982-02-24 1984-11-13 Westinghouse Electric Corp. Semiconductor device soldered to a graphite substrate
US4507674A (en) * 1982-06-07 1985-03-26 Hughes Aircraft Company Backside illuminated blocked impurity band infrared detector
US4503089A (en) * 1982-09-30 1985-03-05 Allegheny Ludlum Steel Corporation Method for producing semiconductor devices
US4450208A (en) * 1982-09-30 1984-05-22 Allegheny Ludlum Steel Corporation Composite article for a semiconductor device
JPS6024641A (en) * 1983-07-20 1985-02-07 Nec Corp Microprogram controlling system
DE3242831A1 (en) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München AMORPHOUS SILICON SOLAR CELL AND METHOD FOR THEIR PRODUCTION
DE3429899A1 (en) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo METHOD FOR FORMING A DEPOSITION FILM
JPH0652795B2 (en) * 1984-03-07 1994-07-06 太陽誘電株式会社 Flexible amorphous semiconductor solar cell
US4639277A (en) * 1984-07-02 1987-01-27 Eastman Kodak Company Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material
US4759947A (en) * 1984-10-08 1988-07-26 Canon Kabushiki Kaisha Method for forming deposition film using Si compound and active species from carbon and halogen compound
US4726963A (en) * 1985-02-19 1988-02-23 Canon Kabushiki Kaisha Process for forming deposited film
US4818563A (en) * 1985-02-21 1989-04-04 Canon Kabushiki Kaisha Process for forming deposited film
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film
US4853251A (en) * 1985-02-22 1989-08-01 Canon Kabushiki Kaisha Process for forming deposited film including carbon as a constituent element
US4801468A (en) * 1985-02-25 1989-01-31 Canon Kabushiki Kaisha Process for forming deposited film
JP2537175B2 (en) * 1985-03-27 1996-09-25 キヤノン株式会社 Functional deposition film manufacturing equipment
US4677250A (en) * 1985-10-30 1987-06-30 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell
US4772564A (en) * 1985-10-30 1988-09-20 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell fabrication process
US4781766A (en) * 1985-10-30 1988-11-01 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell and method
JPH0647727B2 (en) * 1985-12-24 1994-06-22 キヤノン株式会社 Deposited film formation method
JPH084071B2 (en) * 1985-12-28 1996-01-17 キヤノン株式会社 Deposited film formation method
JPH0639357B2 (en) * 1986-09-08 1994-05-25 新技術開発事業団 Method for growing element semiconductor single crystal thin film
JPS63168056A (en) * 1986-12-29 1988-07-12 Taiyo Yuden Co Ltd Amorphous semiconductor solar battery
US4916091A (en) * 1987-11-05 1990-04-10 Texas Instruments Incorporated Plasma and plasma UV deposition of SiO2
DE3813737A1 (en) * 1988-04-23 1989-11-02 Fraunhofer Ges Forschung METHOD FOR PRODUCING SOLAR CELLS AND MIRROR STOVES FOR CARRYING OUT THE METHOD
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
US5273911A (en) * 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
DE4119531A1 (en) * 1991-06-13 1992-12-17 Wacker Chemitronic EPITAXED SEMICONDUCTOR DISC WITH A LOW-OXYGEN ZONE, ADJUSTABLE EXPANSION AND METHOD FOR THEIR PRODUCTION
US5455430A (en) * 1991-08-01 1995-10-03 Sanyo Electric Co., Ltd. Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate
DE4133644A1 (en) * 1991-10-11 1993-04-15 Nukem Gmbh SEMICONDUCTOR COMPONENT, METHOD FOR THE PRODUCTION THEREOF AND THE ARRANGEMENT USED FOR THIS
JPH0690014A (en) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp Thin solar cell and its production, etching method and automatic etching device, and production of semiconductor device
DE4237017A1 (en) * 1992-11-02 1994-05-05 Mir Patent Lizenzverwertungen Method of making a heating element
US6649824B1 (en) * 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
EP1468789A3 (en) * 2003-04-17 2008-06-04 BLACK & DECKER INC. Clutch for rotary power tool and rotary power tool incorporating such clutch
EP1605499A3 (en) * 2004-06-07 2009-12-02 Imec Method for manufacturing a crystalline silicon layer
US7709360B2 (en) * 2004-06-07 2010-05-04 Imec Method for manufacturing a crystalline silicon layer
FR2878648B1 (en) * 2004-11-30 2007-02-02 Commissariat Energie Atomique RECTANGULAR SEMICONDUCTOR SUPPORT FOR MICROELECTRONICS AND METHOD OF MAKING SUCH A SUPPORT
US7468485B1 (en) 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US8314327B2 (en) * 2005-11-06 2012-11-20 Banpil Photonics, Inc. Photovoltaic cells based on nano or micro-scale structures
DE202005019945U1 (en) * 2005-12-17 2006-03-23 Solarwatt Ag Crystalline photovoltaic solar module
US8624108B1 (en) * 2006-11-01 2014-01-07 Banpil Photonics, Inc. Photovoltaic cells based on nano or micro-scale structures
US8053038B2 (en) * 2007-09-18 2011-11-08 Atomic Energy Council-Institute Of Nuclear Energy Research Method for making titanium-based compound film of poly silicon solar cell
US7851249B2 (en) * 2007-10-31 2010-12-14 Atomic Energy Council - Institute Of Nuclear Energy Research Tandem solar cell including an amorphous silicon carbide layer and a multi-crystalline silicon layer
WO2009062117A1 (en) * 2007-11-09 2009-05-14 Sunpreme, Inc. Low-cost solar cells and methods for their production
US8198528B2 (en) * 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
US7863080B1 (en) * 2008-01-07 2011-01-04 Atomic Energy Council-Institute Of Nuclear Energy Process for making multi-crystalline silicon thin-film solar cells
US8222516B2 (en) 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
JP5386747B2 (en) * 2008-02-21 2014-01-15 公益財団法人神奈川科学技術アカデミー Semiconductor substrate, semiconductor element, light emitting element, and electronic element
US7851698B2 (en) * 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US7951640B2 (en) * 2008-11-07 2011-05-31 Sunpreme, Ltd. Low-cost multi-junction solar cells and methods for their production
US8796066B2 (en) * 2008-11-07 2014-08-05 Sunpreme, Inc. Low-cost solar cells and methods for fabricating low cost substrates for solar cells
US8242354B2 (en) * 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
US8409911B2 (en) * 2009-02-24 2013-04-02 Sunpower Corporation Methods for metallization of solar cells
US9070804B2 (en) * 2009-02-24 2015-06-30 Sunpower Corporation Back contact sliver cells
US8253058B2 (en) * 2009-03-19 2012-08-28 Integrated Photovoltaics, Incorporated Hybrid nozzle for plasma spraying silicon
US8283559B2 (en) * 2009-04-09 2012-10-09 Silevo, Inc. Silicon-based dielectric stack passivation of Si-epitaxial thin-film solar cells
TWI379430B (en) * 2009-04-16 2012-12-11 Atomic Energy Council A method of fabricating a thin interface for internal light reflection and impurities isolation
US20110017299A1 (en) * 2009-07-27 2011-01-27 Mccormack Jr Joe Thornton Solar Sheath
US8110419B2 (en) 2009-08-20 2012-02-07 Integrated Photovoltaic, Inc. Process of manufacturing photovoltaic device
US8476660B2 (en) * 2009-08-20 2013-07-02 Integrated Photovoltaics, Inc. Photovoltaic cell on substrate
US20110048505A1 (en) * 2009-08-27 2011-03-03 Gabriela Bunea Module Level Solution to Solar Cell Polarization Using an Encapsulant with Opened UV Transmission Curve
US9012766B2 (en) * 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US8377738B2 (en) 2010-07-01 2013-02-19 Sunpower Corporation Fabrication of solar cells with counter doping prevention
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
WO2012044284A1 (en) * 2010-09-28 2012-04-05 Empire Technology Development Llc Directionally recrystallized graphene growth substrates
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
FR2971086B1 (en) 2011-01-31 2014-04-18 Inst Polytechnique Grenoble STRUCTURE SUITABLE FOR FORMATION OF SOLAR CELLS
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US20130171769A1 (en) * 2011-12-30 2013-07-04 Innovation & Infinity Global Corp. Manufacturing method of composite poly-silicon substrate of solar cell
CN104781936A (en) 2012-10-04 2015-07-15 喜瑞能源公司 Photovoltaic devices with electroplated metal grids
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9812590B2 (en) 2012-10-25 2017-11-07 Sunpower Corporation Bifacial solar cell module with backside reflector
US9035172B2 (en) 2012-11-26 2015-05-19 Sunpower Corporation Crack resistant solar cell modules
US9312406B2 (en) 2012-12-19 2016-04-12 Sunpower Corporation Hybrid emitter all back contact solar cell
US8796061B2 (en) 2012-12-21 2014-08-05 Sunpower Corporation Module assembly for thin solar cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US9685571B2 (en) 2013-08-14 2017-06-20 Sunpower Corporation Solar cell module with high electric susceptibility layer
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL66954C (en) * 1946-03-20
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2840489A (en) * 1956-01-17 1958-06-24 Owens Illinois Glass Co Process for the controlled deposition of silicon dihalide vapors onto selected surfaces
FR1141561A (en) * 1956-01-20 1957-09-04 Cedel Method and means for the manufacture of semiconductor materials
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
US2992903A (en) * 1957-10-30 1961-07-18 Imber Oscar Apparatus for growing thin crystals
US3078328A (en) * 1959-11-12 1963-02-19 Texas Instruments Inc Solar cell
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
US3511702A (en) * 1965-08-20 1970-05-12 Motorola Inc Epitaxial growth process from an atmosphere composed of a hydrogen halide,semiconductor halide and hydrogen
US3460240A (en) * 1965-08-24 1969-08-12 Westinghouse Electric Corp Manufacture of semiconductor solar cells
US3449705A (en) * 1966-04-21 1969-06-10 Ncr Co Photoconductive matrix sheet
US3411050A (en) * 1966-04-28 1968-11-12 Air Force Usa Flexible storable solar cell array
US3433677A (en) * 1967-04-05 1969-03-18 Cornell Aeronautical Labor Inc Flexible sheet thin-film photovoltaic generator
US3914856A (en) * 1972-06-05 1975-10-28 Fang Pao Hsien Economical solar cell for producing electricity
US3925577A (en) * 1972-11-24 1975-12-09 Westinghouse Electric Corp Silicon carbide coated graphite members and process for producing the same
US3900943A (en) * 1973-06-07 1975-08-26 Dow Corning Silicon semiconductor device array and method of making same
NL7311470A (en) * 1973-08-21 1975-02-25 Philips Nv METHOD OF DEPOSITING AN EPITAXIAL
US3969163A (en) * 1974-09-19 1976-07-13 Texas Instruments Incorporated Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases
US4003770A (en) * 1975-03-24 1977-01-18 Monsanto Research Corporation Plasma spraying process for preparing polycrystalline solar cells

Also Published As

Publication number Publication date
FR2311409A1 (en) 1976-12-10
US3961997A (en) 1976-06-08
US4077818A (en) 1978-03-07
DE2620832A1 (en) 1976-11-25
NL7605065A (en) 1976-11-16
JPS5231692A (en) 1977-03-10
FR2311409B1 (en) 1980-05-30
CA1068805A (en) 1979-12-25
GB1547626A (en) 1979-06-27

Similar Documents

Publication Publication Date Title
ES448032A1 (en) Fabrication of polycrystalline solar cells on low-cost substrates
Goetzberger et al. Photovoltaic materials, history, status and outlook
JPS5752176A (en) Semiconductor device
CN103887347B (en) A kind of two-sided P-shaped crystalline silicon battery structure and preparation method thereof
CN201699033U (en) Two-sided illuminated crystalline silicon solar battery
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
GB1452637A (en) Diffusion of impurities into a semiconductor
CHU Process for utilizing low-cost graphite substrates for polycrystalline solar cells[Patent]
DE3066689D1 (en) Method of manufacturing a layer containig silicon with an hybrid structure between an amorphous and a polycrystalline form, and solar cell containig such a layer
CHU Fabrication of polycrystalline solar cells on low-cost substrates[Patent]
JPS52124888A (en) Production of solar battery
FR2386142A1 (en) Thin film semiconductor solar cell - with specific semiconductor coating, preventing surface recombination of charge carriers
JPS5283187A (en) Production of solar cell
Fabre et al. Polycrystalline silicon solar cells
CN111785615A (en) Boron doping method of solar cell
JPS5670675A (en) Manufacture of photoelectric converter
ES8201769A1 (en) Photovoltaic cell suitable for manufacturing solar power units.
Woodall State of the art homojunction cells
JPS5643775A (en) Production of solar battery
Strobl et al. From extraterrestrial to terrestrial applications
JPS51123588A (en) Manufacturing method of thin film solar battery
JPS5748258A (en) Semiconductor memory
JPS5568681A (en) Amorphous silicon solar battery and fabricating the same
CHU Development of low cost thin film polycrystalline silicon solar cells for terrestrial applications[Final Report, 1 Jun. 1973- 30 Nov. 1976]
Bae Defect free very shallow p+/n junction and associated photovoltaic effect