JPS5481091A - Plate-type silicon semiconductor and its manufacture - Google Patents

Plate-type silicon semiconductor and its manufacture

Info

Publication number
JPS5481091A
JPS5481091A JP14816077A JP14816077A JPS5481091A JP S5481091 A JPS5481091 A JP S5481091A JP 14816077 A JP14816077 A JP 14816077A JP 14816077 A JP14816077 A JP 14816077A JP S5481091 A JPS5481091 A JP S5481091A
Authority
JP
Japan
Prior art keywords
plate
type
layer
poly
dense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14816077A
Other languages
Japanese (ja)
Other versions
JPS6134267B2 (en
Inventor
Takeshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP14816077A priority Critical patent/JPS5481091A/en
Publication of JPS5481091A publication Critical patent/JPS5481091A/en
Publication of JPS6134267B2 publication Critical patent/JPS6134267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To decrease the loss of the raw material as well as to reduce the energy necessary for production for the Si semiconductor used for the solar battery by producing the plate-type Si semiconductor containing the dense poly-crystal layer on its surface via the eutectic reaction between Si and the low fusing point metal.
CONSTITUTION: The pressure molding is given to the Si powder, and then Al film 2 is sticked on porous plate-type Si surface 1 which if formed by heating and sintering the molded substance of the Si powder to form the Al-Si eutectic liquid layer on th surface. Then silicon crystal 4 is deposited from eutectic liquid layer 3 by cooling the layer starting at one end. In this way, the plate-type Si semiconductor containing the dense poly-crystal layer on the surface of the porous plate-type Si can be produced with a low cost. Owing to the poly-crystal layer featuring the dense surface, it is used as the substrate to grow the Si thin film via the vapor growing method. Then the P-N junction is given to produce the solar battery.
COPYRIGHT: (C)1979,JPO&Japio
JP14816077A 1977-12-12 1977-12-12 Plate-type silicon semiconductor and its manufacture Granted JPS5481091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14816077A JPS5481091A (en) 1977-12-12 1977-12-12 Plate-type silicon semiconductor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14816077A JPS5481091A (en) 1977-12-12 1977-12-12 Plate-type silicon semiconductor and its manufacture

Publications (2)

Publication Number Publication Date
JPS5481091A true JPS5481091A (en) 1979-06-28
JPS6134267B2 JPS6134267B2 (en) 1986-08-06

Family

ID=15446590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14816077A Granted JPS5481091A (en) 1977-12-12 1977-12-12 Plate-type silicon semiconductor and its manufacture

Country Status (1)

Country Link
JP (1) JPS5481091A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289367A (en) * 1985-10-15 1987-04-23 シ−メンス、アクチエンゲゼルシヤフト Manufacture of large area silicon crystal for solar battery

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
JPS5237790A (en) * 1975-09-20 1977-03-23 Agency Of Ind Science & Technol Process for production of polycrystalline semiconductor films
JPS5245868A (en) * 1975-10-08 1977-04-11 Agency Of Ind Science & Technol Process for production of plate-from silicone
JPS5282086A (en) * 1975-12-29 1977-07-08 Shinetsu Handotai Kk Method of producing silicon solar battery

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
JPS5237790A (en) * 1975-09-20 1977-03-23 Agency Of Ind Science & Technol Process for production of polycrystalline semiconductor films
JPS5245868A (en) * 1975-10-08 1977-04-11 Agency Of Ind Science & Technol Process for production of plate-from silicone
JPS5282086A (en) * 1975-12-29 1977-07-08 Shinetsu Handotai Kk Method of producing silicon solar battery

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289367A (en) * 1985-10-15 1987-04-23 シ−メンス、アクチエンゲゼルシヤフト Manufacture of large area silicon crystal for solar battery

Also Published As

Publication number Publication date
JPS6134267B2 (en) 1986-08-06

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