JPS6439018A - Intermetallic compound semiconductor thin film and manufacture thereof - Google Patents

Intermetallic compound semiconductor thin film and manufacture thereof

Info

Publication number
JPS6439018A
JPS6439018A JP62067292A JP6729287A JPS6439018A JP S6439018 A JPS6439018 A JP S6439018A JP 62067292 A JP62067292 A JP 62067292A JP 6729287 A JP6729287 A JP 6729287A JP S6439018 A JPS6439018 A JP S6439018A
Authority
JP
Japan
Prior art keywords
intermetallic compound
deposition
temperature
deposition substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62067292A
Other languages
Japanese (ja)
Other versions
JP2596421B2 (en
Inventor
Toshiaki Fukunaka
Masahide Oshita
Masaaki Inishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP62067292A priority Critical patent/JP2596421B2/en
Priority to US07/138,192 priority patent/US4874438A/en
Priority to PCT/JP1987/000205 priority patent/WO1990007789A1/en
Publication of JPS6439018A publication Critical patent/JPS6439018A/en
Application granted granted Critical
Publication of JP2596421B2 publication Critical patent/JP2596421B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain an intermetallic compound semiconductor film having high electron mobility without reducing an element resistance by specifying a deposition parameter at the time of forming a thin film. CONSTITUTION:A deposition substrate temperature is maintained high and an evaporation source temperature is gradually increased. When an intermetallic compound of groups III-V starts adhering to the deposition substrate, the deposition substrate temperature is reduced. Then the evaporation source temperature is maintained at the intermetallic compound adhesion temperature. The deposition substrate is manufactured by controlling the deposition time and by specifying that the film thickness be 0.6mum or less and that the electron mobility be 5X10<4> to 6X10<4>cm<2>/V.sec. According to the constitution, the electron mobility and sensitivity are improved without reducing the element resistance and the thickness can be reduced. It also helps simplify the manufacturing process and reduce the production cost.
JP62067292A 1986-04-01 1987-03-20 Method for producing intermetallic compound semiconductor thin film Expired - Lifetime JP2596421B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62067292A JP2596421B2 (en) 1987-03-20 1987-03-20 Method for producing intermetallic compound semiconductor thin film
US07/138,192 US4874438A (en) 1986-04-01 1987-04-01 Intermetallic compound semiconductor thin film and method of manufacturing same
PCT/JP1987/000205 WO1990007789A1 (en) 1986-04-01 1987-04-01 Thin film of intermetallic compound semiconductor and process for its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62067292A JP2596421B2 (en) 1987-03-20 1987-03-20 Method for producing intermetallic compound semiconductor thin film

Publications (2)

Publication Number Publication Date
JPS6439018A true JPS6439018A (en) 1989-02-09
JP2596421B2 JP2596421B2 (en) 1997-04-02

Family

ID=13340762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62067292A Expired - Lifetime JP2596421B2 (en) 1986-04-01 1987-03-20 Method for producing intermetallic compound semiconductor thin film

Country Status (1)

Country Link
JP (1) JP2596421B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02272723A (en) * 1989-04-14 1990-11-07 Matsushita Electric Ind Co Ltd Manufacture of indium antimony film
JP2009135197A (en) * 2007-11-29 2009-06-18 Showa Denko Kk Manufacturing methods of group iii nitride semiconductor and group iii nitride semiconductor light emitting element, group iii nitride semiconductor light emitting element and lamp

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.APPL.PHYS=1986 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02272723A (en) * 1989-04-14 1990-11-07 Matsushita Electric Ind Co Ltd Manufacture of indium antimony film
JP2009135197A (en) * 2007-11-29 2009-06-18 Showa Denko Kk Manufacturing methods of group iii nitride semiconductor and group iii nitride semiconductor light emitting element, group iii nitride semiconductor light emitting element and lamp
US8765507B2 (en) 2007-11-29 2014-07-01 Toyoda Gosei Co., Ltd. Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp

Also Published As

Publication number Publication date
JP2596421B2 (en) 1997-04-02

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