JPS6439018A - Intermetallic compound semiconductor thin film and manufacture thereof - Google Patents
Intermetallic compound semiconductor thin film and manufacture thereofInfo
- Publication number
- JPS6439018A JPS6439018A JP62067292A JP6729287A JPS6439018A JP S6439018 A JPS6439018 A JP S6439018A JP 62067292 A JP62067292 A JP 62067292A JP 6729287 A JP6729287 A JP 6729287A JP S6439018 A JPS6439018 A JP S6439018A
- Authority
- JP
- Japan
- Prior art keywords
- intermetallic compound
- deposition
- temperature
- deposition substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To obtain an intermetallic compound semiconductor film having high electron mobility without reducing an element resistance by specifying a deposition parameter at the time of forming a thin film. CONSTITUTION:A deposition substrate temperature is maintained high and an evaporation source temperature is gradually increased. When an intermetallic compound of groups III-V starts adhering to the deposition substrate, the deposition substrate temperature is reduced. Then the evaporation source temperature is maintained at the intermetallic compound adhesion temperature. The deposition substrate is manufactured by controlling the deposition time and by specifying that the film thickness be 0.6mum or less and that the electron mobility be 5X10<4> to 6X10<4>cm<2>/V.sec. According to the constitution, the electron mobility and sensitivity are improved without reducing the element resistance and the thickness can be reduced. It also helps simplify the manufacturing process and reduce the production cost.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62067292A JP2596421B2 (en) | 1987-03-20 | 1987-03-20 | Method for producing intermetallic compound semiconductor thin film |
US07/138,192 US4874438A (en) | 1986-04-01 | 1987-04-01 | Intermetallic compound semiconductor thin film and method of manufacturing same |
PCT/JP1987/000205 WO1990007789A1 (en) | 1986-04-01 | 1987-04-01 | Thin film of intermetallic compound semiconductor and process for its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62067292A JP2596421B2 (en) | 1987-03-20 | 1987-03-20 | Method for producing intermetallic compound semiconductor thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6439018A true JPS6439018A (en) | 1989-02-09 |
JP2596421B2 JP2596421B2 (en) | 1997-04-02 |
Family
ID=13340762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62067292A Expired - Lifetime JP2596421B2 (en) | 1986-04-01 | 1987-03-20 | Method for producing intermetallic compound semiconductor thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2596421B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02272723A (en) * | 1989-04-14 | 1990-11-07 | Matsushita Electric Ind Co Ltd | Manufacture of indium antimony film |
JP2009135197A (en) * | 2007-11-29 | 2009-06-18 | Showa Denko Kk | Manufacturing methods of group iii nitride semiconductor and group iii nitride semiconductor light emitting element, group iii nitride semiconductor light emitting element and lamp |
-
1987
- 1987-03-20 JP JP62067292A patent/JP2596421B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
Title |
---|
J.APPL.PHYS=1986 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02272723A (en) * | 1989-04-14 | 1990-11-07 | Matsushita Electric Ind Co Ltd | Manufacture of indium antimony film |
JP2009135197A (en) * | 2007-11-29 | 2009-06-18 | Showa Denko Kk | Manufacturing methods of group iii nitride semiconductor and group iii nitride semiconductor light emitting element, group iii nitride semiconductor light emitting element and lamp |
US8765507B2 (en) | 2007-11-29 | 2014-07-01 | Toyoda Gosei Co., Ltd. | Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp |
Also Published As
Publication number | Publication date |
---|---|
JP2596421B2 (en) | 1997-04-02 |
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