JPS54143780A - Manufacture of semiconductor sputtering target - Google Patents

Manufacture of semiconductor sputtering target

Info

Publication number
JPS54143780A
JPS54143780A JP5075778A JP5075778A JPS54143780A JP S54143780 A JPS54143780 A JP S54143780A JP 5075778 A JP5075778 A JP 5075778A JP 5075778 A JP5075778 A JP 5075778A JP S54143780 A JPS54143780 A JP S54143780A
Authority
JP
Japan
Prior art keywords
pieces
melt
substrate
semiconductor
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5075778A
Other languages
Japanese (ja)
Other versions
JPS5621350B2 (en
Inventor
Nobuo Matsumoto
Kenji Kumabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5075778A priority Critical patent/JPS54143780A/en
Publication of JPS54143780A publication Critical patent/JPS54143780A/en
Publication of JPS5621350B2 publication Critical patent/JPS5621350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To manufacture a target having the substantially same element component ratio as that of a raw material semiconductor and contg. little impurities by arranging a plurality of platelike pieces cut off a semiconductor crystal as a target face-constituting material on a substrate with a Ga melt in-between while closely contacting the pieces and by adhering the pieces to the substrate. CONSTITUTION:Substrate 1 made of Al, SiO2 or the like easy to adhere to Ga is heated to 100-150 deg.C and coated with a Ga melt in the form of a 10-100mum thick film. About 0.5mm thick rectangular platelike pieces 3 made of III-V group cpd. semiconductor such as GaAs or GaP are arranged on the Ga melt while closely contacting pieces 3 in mosaic work to constitute a series of target faces of a predetermined size. By cooling to below 10 deg.C the Ga melt is solidified to firmly adhere pieces 3 to substrate 1 with Ga solidified layer 2 in-between, thus manufacturing a desired semiconductor sputtering target.
JP5075778A 1978-05-01 1978-05-01 Manufacture of semiconductor sputtering target Granted JPS54143780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5075778A JPS54143780A (en) 1978-05-01 1978-05-01 Manufacture of semiconductor sputtering target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5075778A JPS54143780A (en) 1978-05-01 1978-05-01 Manufacture of semiconductor sputtering target

Publications (2)

Publication Number Publication Date
JPS54143780A true JPS54143780A (en) 1979-11-09
JPS5621350B2 JPS5621350B2 (en) 1981-05-19

Family

ID=12867704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5075778A Granted JPS54143780A (en) 1978-05-01 1978-05-01 Manufacture of semiconductor sputtering target

Country Status (1)

Country Link
JP (1) JPS54143780A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134729A (en) * 1980-03-25 1981-10-21 Seiji Miyake Production of thin film by sputtering
JPS56134730A (en) * 1980-03-25 1981-10-21 Seiji Miyake Production of thin film by sputtering
JPH01164757U (en) * 1988-05-06 1989-11-17
EP1614767A1 (en) * 2004-07-09 2006-01-11 Applied Materials, Inc. Target tiles in a staggered array
US7550066B2 (en) 2004-07-09 2009-06-23 Applied Materials, Inc. Staggered target tiles

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134729A (en) * 1980-03-25 1981-10-21 Seiji Miyake Production of thin film by sputtering
JPS56134730A (en) * 1980-03-25 1981-10-21 Seiji Miyake Production of thin film by sputtering
JPH01164757U (en) * 1988-05-06 1989-11-17
EP1614767A1 (en) * 2004-07-09 2006-01-11 Applied Materials, Inc. Target tiles in a staggered array
KR100822921B1 (en) * 2004-07-09 2008-04-18 어플라이드 머티어리얼스, 인코포레이티드 A tiled sputtering target, a plasma sputtering reactor including the same, and a method of sputtering using the same
US7550066B2 (en) 2004-07-09 2009-06-23 Applied Materials, Inc. Staggered target tiles

Also Published As

Publication number Publication date
JPS5621350B2 (en) 1981-05-19

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