JPS5635414A - Method of liquid phase growth - Google Patents
Method of liquid phase growthInfo
- Publication number
- JPS5635414A JPS5635414A JP11020579A JP11020579A JPS5635414A JP S5635414 A JPS5635414 A JP S5635414A JP 11020579 A JP11020579 A JP 11020579A JP 11020579 A JP11020579 A JP 11020579A JP S5635414 A JPS5635414 A JP S5635414A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- melts
- substrates
- growing
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To avoid the wasting of materials when simultaneously growing epitaxial layers of various constructions on a plurality of substrates in accordance with a sliding method, by growing a succeeding melt on the second substrate while growing a preceding layer on the first substrate and by producing a preceding grown layer on the grown layer on the second substrate. CONSTITUTION:A plurality of substrate housing recesses are provided on a board 2 made of graphite. GaAs single crystal substrates 7a-7c and GaAs polycrystalline plates 8-10 are set in the recesses. A slider 3 having melt reservoirs and made of the same material as the board 2 is placed on its end so that a growing boat 1 is provided. Melts 4-6 in the reservoirs are brought into contact with the polycrystalline plates 8-10 first and heated to dissolve prescribed quantities of Ga and As from the plate 8 into the melts 4-6. After that, the slider 3 is moved to wet the substrates 7a-7c with the melts 4-6 and then wet the substrates 7a, 7b with the melts 5, 6 and finally bring the melt 6 into contact with only the substrate 7a. Double and single hetero-junctions are thereby produced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11020579A JPS5635414A (en) | 1979-08-31 | 1979-08-31 | Method of liquid phase growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11020579A JPS5635414A (en) | 1979-08-31 | 1979-08-31 | Method of liquid phase growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5635414A true JPS5635414A (en) | 1981-04-08 |
Family
ID=14529709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11020579A Pending JPS5635414A (en) | 1979-08-31 | 1979-08-31 | Method of liquid phase growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5635414A (en) |
-
1979
- 1979-08-31 JP JP11020579A patent/JPS5635414A/en active Pending
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