JPS5587427A - Method and apparatus for liquid-phase epitaxial growth - Google Patents

Method and apparatus for liquid-phase epitaxial growth

Info

Publication number
JPS5587427A
JPS5587427A JP16317078A JP16317078A JPS5587427A JP S5587427 A JPS5587427 A JP S5587427A JP 16317078 A JP16317078 A JP 16317078A JP 16317078 A JP16317078 A JP 16317078A JP S5587427 A JPS5587427 A JP S5587427A
Authority
JP
Japan
Prior art keywords
growing
holder
solution
substrates
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16317078A
Other languages
Japanese (ja)
Inventor
Koichi Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16317078A priority Critical patent/JPS5587427A/en
Publication of JPS5587427A publication Critical patent/JPS5587427A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To increase the productivity in continuously growing multi-layer epitaxial layers having different thickness on a many number of substrates, by controlling the thickness of each layer by the amount of growing solution and growth time, and obtaining a number of multi-layer epitaxial layers with uniform thickness and composition.
CONSTITUTION: In the case n-type GaAs layers and p-type GaAs layers, having different thickness, are stacked on a GaAs substrate and epitaxially grown, a plurality of substrate fixing portions 5a and 5b, 5c and 5d, 5e and 5f, and so on are provided on a substrate holder 4 to be used. Then, dummy GaAs substrates 6a and 6b are placed on the fixing portions 5a and 5b, growing substrates 6cW6f are placed on 5cW5f, and a slidable growing solution holder 8 having 2 growing solution reservoirs 7a and 7b are placed on the holder 4. In this constitution a specified amount of Ga and Te is put in the solution reservoir 7a, and a specified amount of Ga and Ge are put in the solution reservoir 7b. Then, compressing lid 9a is placed, and at first heat is applied to reach 900°C at a point A quickly. Then, the holder 8 is slid, and a point G is reached after a specified period.
COPYRIGHT: (C)1980,JPO&Japio
JP16317078A 1978-12-26 1978-12-26 Method and apparatus for liquid-phase epitaxial growth Pending JPS5587427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16317078A JPS5587427A (en) 1978-12-26 1978-12-26 Method and apparatus for liquid-phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16317078A JPS5587427A (en) 1978-12-26 1978-12-26 Method and apparatus for liquid-phase epitaxial growth

Publications (1)

Publication Number Publication Date
JPS5587427A true JPS5587427A (en) 1980-07-02

Family

ID=15768562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16317078A Pending JPS5587427A (en) 1978-12-26 1978-12-26 Method and apparatus for liquid-phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5587427A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712677A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712680A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712673A (en) * 1980-06-27 1982-01-22 Nec Corp Serial printer
US5223079A (en) * 1991-03-18 1993-06-29 Motorola, Inc. Forming thin liquid phase epitaxial layers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135677A (en) * 1974-09-20 1976-03-26 Hitachi Ltd RENZOKUEKISOSEICHOHOHO OYOBI SOCHI

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135677A (en) * 1974-09-20 1976-03-26 Hitachi Ltd RENZOKUEKISOSEICHOHOHO OYOBI SOCHI

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712677A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712680A (en) * 1980-06-27 1982-01-22 Nec Corp Printer
JPS5712673A (en) * 1980-06-27 1982-01-22 Nec Corp Serial printer
JPS6353036B2 (en) * 1980-06-27 1988-10-20 Nippon Electric Co
US5223079A (en) * 1991-03-18 1993-06-29 Motorola, Inc. Forming thin liquid phase epitaxial layers

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