JPS56134730A - Production of thin film by sputtering - Google Patents

Production of thin film by sputtering

Info

Publication number
JPS56134730A
JPS56134730A JP3860580A JP3860580A JPS56134730A JP S56134730 A JPS56134730 A JP S56134730A JP 3860580 A JP3860580 A JP 3860580A JP 3860580 A JP3860580 A JP 3860580A JP S56134730 A JPS56134730 A JP S56134730A
Authority
JP
Japan
Prior art keywords
target
thin film
binder
sputtering
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3860580A
Other languages
Japanese (ja)
Inventor
Seiji Miyake
Naoyuki Miyata
Koichi Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Narumi China Corp
Original Assignee
Narumi China Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Narumi China Corp filed Critical Narumi China Corp
Priority to JP3860580A priority Critical patent/JPS56134730A/en
Publication of JPS56134730A publication Critical patent/JPS56134730A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a thin film excellent in photoelectric and optical properties with a target made by heating a target material molded with an inorganic substance to a binder and a solvent. CONSTITUTION:A sputtering target material made of an inorganic substance is mixed with a binder and a solvent and molded under pressure. Then, it is heated upto about 500 deg.C to remove the binder and the solvent to make a target. The target 3 is placed on a cathode 2 in a vaccum dischrge box 1 while a glass substrate 5 is fixed on an anode 4 and a high frequency discharging is performed between the cathode 2 and the anode 4 with a high frequency power source 8. This forms a sputtering film 6 on a substrate 5, which keeps the target form leaving impurity and chemical changes thereby providing a thin film highly excellent in the photoelectric and optical properties.
JP3860580A 1980-03-25 1980-03-25 Production of thin film by sputtering Pending JPS56134730A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3860580A JPS56134730A (en) 1980-03-25 1980-03-25 Production of thin film by sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3860580A JPS56134730A (en) 1980-03-25 1980-03-25 Production of thin film by sputtering

Publications (1)

Publication Number Publication Date
JPS56134730A true JPS56134730A (en) 1981-10-21

Family

ID=12529896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3860580A Pending JPS56134730A (en) 1980-03-25 1980-03-25 Production of thin film by sputtering

Country Status (1)

Country Link
JP (1) JPS56134730A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010516892A (en) * 2007-01-16 2010-05-20 ハー ツェー シュタルク インコーポレイテッド High density refractory metal and alloy sputtering targets

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143780A (en) * 1978-05-01 1979-11-09 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor sputtering target

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143780A (en) * 1978-05-01 1979-11-09 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor sputtering target

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010516892A (en) * 2007-01-16 2010-05-20 ハー ツェー シュタルク インコーポレイテッド High density refractory metal and alloy sputtering targets
JP2014012895A (en) * 2007-01-16 2014-01-23 Hc Starck Inc High density, refractory metal, and sputtering target of alloy

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