JPS56134729A - Production of thin film by sputtering - Google Patents

Production of thin film by sputtering

Info

Publication number
JPS56134729A
JPS56134729A JP3860480A JP3860480A JPS56134729A JP S56134729 A JPS56134729 A JP S56134729A JP 3860480 A JP3860480 A JP 3860480A JP 3860480 A JP3860480 A JP 3860480A JP S56134729 A JPS56134729 A JP S56134729A
Authority
JP
Japan
Prior art keywords
target
thin film
sputtering
photoelectric
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3860480A
Other languages
Japanese (ja)
Inventor
Seiji Miyake
Naoyuki Miyata
Koichi Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Narumi China Corp
Original Assignee
Narumi China Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Narumi China Corp filed Critical Narumi China Corp
Priority to JP3860480A priority Critical patent/JPS56134729A/en
Publication of JPS56134729A publication Critical patent/JPS56134729A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a thin film excellent in the photoelectric and optical properties for a higher frequency sputtering by molding an inorganic material into a target under pressure at a low temperature with no binder. CONSTITUTION:A powdered material of an inorganic substance is molded into a target 3 under pressure at a normal temperature or a temperature range free from chemical change with no binder. The target 3 is placed on a cathode 2 in a vacuum discharge box 1 while a glass substrate 5 is fixed on an anode 4. A high frequency discharging is performed between the cathode 2 and the anode 4 by a high frequency power source 8 to form a sputtering film 6 on the substrate 5. This keeps the target 3 from mixture with impurities and chemical changes thereby providing a thin film highly excellent in the photoelectric and optical properties.
JP3860480A 1980-03-25 1980-03-25 Production of thin film by sputtering Pending JPS56134729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3860480A JPS56134729A (en) 1980-03-25 1980-03-25 Production of thin film by sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3860480A JPS56134729A (en) 1980-03-25 1980-03-25 Production of thin film by sputtering

Publications (1)

Publication Number Publication Date
JPS56134729A true JPS56134729A (en) 1981-10-21

Family

ID=12529872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3860480A Pending JPS56134729A (en) 1980-03-25 1980-03-25 Production of thin film by sputtering

Country Status (1)

Country Link
JP (1) JPS56134729A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017212362A1 (en) * 2016-06-10 2017-12-14 株式会社半導体エネルギー研究所 Sputtering target and method for producing sputtering target
WO2018011645A1 (en) * 2016-07-11 2018-01-18 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143780A (en) * 1978-05-01 1979-11-09 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor sputtering target

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143780A (en) * 1978-05-01 1979-11-09 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor sputtering target

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017212362A1 (en) * 2016-06-10 2017-12-14 株式会社半導体エネルギー研究所 Sputtering target and method for producing sputtering target
WO2018011645A1 (en) * 2016-07-11 2018-01-18 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing the same
CN109477206A (en) * 2016-07-11 2019-03-15 株式会社半导体能源研究所 The manufacturing method of sputtering target material and the sputtering target material
US11081326B2 (en) 2016-07-11 2021-08-03 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing the same
US11735403B2 (en) 2016-07-11 2023-08-22 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing the same

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