JPS57102011A - Manufacture of amorphous semiconductor device - Google Patents

Manufacture of amorphous semiconductor device

Info

Publication number
JPS57102011A
JPS57102011A JP55178444A JP17844480A JPS57102011A JP S57102011 A JPS57102011 A JP S57102011A JP 55178444 A JP55178444 A JP 55178444A JP 17844480 A JP17844480 A JP 17844480A JP S57102011 A JPS57102011 A JP S57102011A
Authority
JP
Japan
Prior art keywords
uniform
film
vapor flow
vacuum chamber
control cylinder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55178444A
Other languages
Japanese (ja)
Inventor
Kuniharu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55178444A priority Critical patent/JPS57102011A/en
Publication of JPS57102011A publication Critical patent/JPS57102011A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Abstract

PURPOSE:To make vapor flow uniform and obtain a uniform film by a method wherein a vapor flow control cylinder is provided close to discharge electrodes. CONSTITUTION:Vapor of materials such as monosilane, diborane and phosphine is introdced into a vacuum chamber 41 and an amorphous semiconductor film is formed by a discharge phenomenon in the vacuum chamber 41. In above procedure, a vapor flow control cylinder 47 is provided close to discharge electrodes 42, 43 in the vacuum chamber 41. Holes are made at the lower part of the control cylinder 47 so as to provide uniform vapor flow. With above method a film which has not only a uniform thickness but also some uniform electric properties is obtained, so that overall characteristics of the film are improved.
JP55178444A 1980-12-17 1980-12-17 Manufacture of amorphous semiconductor device Pending JPS57102011A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55178444A JPS57102011A (en) 1980-12-17 1980-12-17 Manufacture of amorphous semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55178444A JPS57102011A (en) 1980-12-17 1980-12-17 Manufacture of amorphous semiconductor device

Publications (1)

Publication Number Publication Date
JPS57102011A true JPS57102011A (en) 1982-06-24

Family

ID=16048622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55178444A Pending JPS57102011A (en) 1980-12-17 1980-12-17 Manufacture of amorphous semiconductor device

Country Status (1)

Country Link
JP (1) JPS57102011A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09115836A (en) * 1995-09-29 1997-05-02 Hyundai Electron Ind Co Ltd Thin film vapor deposition apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09115836A (en) * 1995-09-29 1997-05-02 Hyundai Electron Ind Co Ltd Thin film vapor deposition apparatus
US5948167A (en) * 1995-09-29 1999-09-07 Hyundai Electronics Industries Co., Ltd. Thin film deposition apparatus

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