JPS57184224A - Microwave plasma treating method and its device - Google Patents

Microwave plasma treating method and its device

Info

Publication number
JPS57184224A
JPS57184224A JP6986881A JP6986881A JPS57184224A JP S57184224 A JPS57184224 A JP S57184224A JP 6986881 A JP6986881 A JP 6986881A JP 6986881 A JP6986881 A JP 6986881A JP S57184224 A JPS57184224 A JP S57184224A
Authority
JP
Japan
Prior art keywords
plasma
treating
shielding plate
openings
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6986881A
Other languages
Japanese (ja)
Other versions
JPH0415613B2 (en
Inventor
Hiroshi Yano
Hideki Miyaji
Mikio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6986881A priority Critical patent/JPS57184224A/en
Publication of JPS57184224A publication Critical patent/JPS57184224A/en
Publication of JPH0415613B2 publication Critical patent/JPH0415613B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the characteristics of etching by dividing a plasma treating device into two of a plasma generating region and a treating region, shielding the two regions by a metallic shielding plate, introducing only active plasma into the treating region and integrally forming the device by a metallic material. CONSTITUTION:A microwave treating chamber is formed by the plasma generating section 12 and the treating section 13, and the metallic shielding plate 14, to an intermediate section thereof openings are formed, is mounted. Plasma particles having high energy are limited to the plasma generating section 12 by the shielding plate 14, and only active plasma particles react with a sample 17 arranged onto a smaple base 20 through the openings of the shielding plate 14. The shielding plate 14 is formed by a 5mm. thick aluminum plate with a diameter such as an approximately 2mm. diameter, which has a large number of the openings. The whole treating chamber is shaped integrally by 10mm. thick aluminum, which is easy to be worked and resists pressure. Accordingly, the plasma particles having high energy do not damage the sample 17, and etching can be conducted under an excellent condition.
JP6986881A 1981-05-08 1981-05-08 Microwave plasma treating method and its device Granted JPS57184224A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6986881A JPS57184224A (en) 1981-05-08 1981-05-08 Microwave plasma treating method and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6986881A JPS57184224A (en) 1981-05-08 1981-05-08 Microwave plasma treating method and its device

Publications (2)

Publication Number Publication Date
JPS57184224A true JPS57184224A (en) 1982-11-12
JPH0415613B2 JPH0415613B2 (en) 1992-03-18

Family

ID=13415196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6986881A Granted JPS57184224A (en) 1981-05-08 1981-05-08 Microwave plasma treating method and its device

Country Status (1)

Country Link
JP (1) JPS57184224A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169135A (en) * 1983-03-16 1984-09-25 Fujitsu Ltd Manufacture of semiconductor device
JPS612320A (en) * 1984-06-15 1986-01-08 Toshiba Corp Sample processing device
JPH05129235A (en) * 1991-10-31 1993-05-25 Yuichi Sakamoto Ecr-type plasma processing apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52126177A (en) * 1976-04-15 1977-10-22 Hitachi Ltd Etching device
JPS536239A (en) * 1976-07-08 1978-01-20 Nippon Electric Co Plasma etching method
JPS5341076A (en) * 1976-09-27 1978-04-14 Toshiba Corp Process for treating bulb wastes containing mercury
JPS5424580A (en) * 1977-07-27 1979-02-23 Toshiba Corp Etching method
JPS5449073A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Plasma processing unit
JPS5532423A (en) * 1978-08-25 1980-03-07 Rhythm Watch Co Ltd Winding method and construction of motor coil

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52126177A (en) * 1976-04-15 1977-10-22 Hitachi Ltd Etching device
JPS536239A (en) * 1976-07-08 1978-01-20 Nippon Electric Co Plasma etching method
JPS5341076A (en) * 1976-09-27 1978-04-14 Toshiba Corp Process for treating bulb wastes containing mercury
JPS5424580A (en) * 1977-07-27 1979-02-23 Toshiba Corp Etching method
JPS5449073A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Plasma processing unit
JPS5532423A (en) * 1978-08-25 1980-03-07 Rhythm Watch Co Ltd Winding method and construction of motor coil

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169135A (en) * 1983-03-16 1984-09-25 Fujitsu Ltd Manufacture of semiconductor device
JPS612320A (en) * 1984-06-15 1986-01-08 Toshiba Corp Sample processing device
JPH05129235A (en) * 1991-10-31 1993-05-25 Yuichi Sakamoto Ecr-type plasma processing apparatus

Also Published As

Publication number Publication date
JPH0415613B2 (en) 1992-03-18

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