JPS5669374A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS5669374A
JPS5669374A JP14511379A JP14511379A JPS5669374A JP S5669374 A JPS5669374 A JP S5669374A JP 14511379 A JP14511379 A JP 14511379A JP 14511379 A JP14511379 A JP 14511379A JP S5669374 A JPS5669374 A JP S5669374A
Authority
JP
Japan
Prior art keywords
worked
dry etching
etching
uniformity
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14511379A
Other languages
Japanese (ja)
Inventor
Hiroshi Kinoshita
Tsunetoshi Arikado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14511379A priority Critical patent/JPS5669374A/en
Publication of JPS5669374A publication Critical patent/JPS5669374A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Abstract

PURPOSE:To enhance the uniformity of the dry etching without reducing the etching speed, selectivity ratio (a ratio of the etching speed between those for the silicon oxide and for the silicon substrate in the silicon substrate for a semiconductor device) and the like by changing the shape of an electrode confronting the work to be processed in accordance with the shape of the member to be worked and carry ing out the etching by a reaction gas. CONSTITUTION:Reaction gas such as fluorocarbon and chlorocarbon is introduced into a cylindrical container 1 from a gas introduction tube 2. Turning on high frequency power source 8, etchant such as CF 3 of relatively short life is produced between opposed electrodes 5' and 7 and material 9 to be worked on a lower electrode 7 is subjected to dry etching. At this time, the part of the upper electrode 5' corresponding to the material 9 to be worked is bent upward correspondingly to the thickness of the material to be worked, thereby the uniformity of the dry etching being increased.
JP14511379A 1979-11-09 1979-11-09 Dry etching method Pending JPS5669374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14511379A JPS5669374A (en) 1979-11-09 1979-11-09 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14511379A JPS5669374A (en) 1979-11-09 1979-11-09 Dry etching method

Publications (1)

Publication Number Publication Date
JPS5669374A true JPS5669374A (en) 1981-06-10

Family

ID=15377682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14511379A Pending JPS5669374A (en) 1979-11-09 1979-11-09 Dry etching method

Country Status (1)

Country Link
JP (1) JPS5669374A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045858A2 (en) * 1980-08-11 1982-02-17 Eaton Corporation Plasma etching electrode
NL9201938A (en) * 1991-11-13 1993-06-01 Leybold Ag DEVICE FOR IONIC ETCHING OVER A LARGE SURFACE.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045858A2 (en) * 1980-08-11 1982-02-17 Eaton Corporation Plasma etching electrode
EP0045858A3 (en) * 1980-08-11 1983-01-12 Eaton Corporation Plasma etching electrode
NL9201938A (en) * 1991-11-13 1993-06-01 Leybold Ag DEVICE FOR IONIC ETCHING OVER A LARGE SURFACE.

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