JPS57131372A - Plasma etching device - Google Patents
Plasma etching deviceInfo
- Publication number
- JPS57131372A JPS57131372A JP1614881A JP1614881A JPS57131372A JP S57131372 A JPS57131372 A JP S57131372A JP 1614881 A JP1614881 A JP 1614881A JP 1614881 A JP1614881 A JP 1614881A JP S57131372 A JPS57131372 A JP S57131372A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- electrode
- etched
- vessel
- route
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To make the supply of a reactive gas uniform and to make the rate of etching uniform in plasma etching of integrated circuits, etc., by providing a gas lead-in route and gas ejection ports as well as gas exhausting holes to an electrode disposed in a vaccum vessel.
CONSTITUTION: A sample 13 to be etched is placed on a lower electrode 4 placed in a vaccum vessel 2. An upper electrode 3 is formed of a part 3 having a gas lead-in route, parts 14 provided uniformly with many gas ejection holes and screws 15. A reactive gas is passed through a valve 10 then through the center of the part 3 and is supplied through the ejection ports 15 of the parts 14 into the vessel 2. This reactive gas is turned to plasma by the high frequency voltage applied between the electrode 3 and the electrode 4, by which the sample to be etched is etched. The gas completed of the reaction is sucked into a rotary pump through the exhausting port 17 provided to the electrode 4. This device is used for production, etc. of semiconductor integrated circuits.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1614881A JPS57131372A (en) | 1981-02-05 | 1981-02-05 | Plasma etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1614881A JPS57131372A (en) | 1981-02-05 | 1981-02-05 | Plasma etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57131372A true JPS57131372A (en) | 1982-08-14 |
Family
ID=11908410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1614881A Pending JPS57131372A (en) | 1981-02-05 | 1981-02-05 | Plasma etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57131372A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947732A (en) * | 1982-09-10 | 1984-03-17 | Hitachi Ltd | Semiconductor manufacturing apparatus |
JPS6059078A (en) * | 1983-09-12 | 1985-04-05 | Nec Corp | Dry etching apparatus |
JPS60106336U (en) * | 1983-12-23 | 1985-07-19 | 株式会社日立国際電気 | plasma etching equipment |
JPS60118236U (en) * | 1984-01-18 | 1985-08-09 | 株式会社日立国際電気 | Electrode for plasma etching equipment |
JPS60167330A (en) * | 1983-11-14 | 1985-08-30 | ジ−・シ−・エ−・コ−ポレ−シヨン | Gas supply device of reactive ion etching equipment |
JPS61130494A (en) * | 1984-11-29 | 1986-06-18 | Tokuda Seisakusho Ltd | Plasma etching device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55128584A (en) * | 1979-03-27 | 1980-10-04 | Mitsubishi Electric Corp | Plasma etching device |
JPS5684478A (en) * | 1979-12-10 | 1981-07-09 | Matsushita Electronics Corp | Apparatus for plasma treatment |
-
1981
- 1981-02-05 JP JP1614881A patent/JPS57131372A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55128584A (en) * | 1979-03-27 | 1980-10-04 | Mitsubishi Electric Corp | Plasma etching device |
JPS5684478A (en) * | 1979-12-10 | 1981-07-09 | Matsushita Electronics Corp | Apparatus for plasma treatment |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947732A (en) * | 1982-09-10 | 1984-03-17 | Hitachi Ltd | Semiconductor manufacturing apparatus |
JPS6059078A (en) * | 1983-09-12 | 1985-04-05 | Nec Corp | Dry etching apparatus |
JPS6366394B2 (en) * | 1983-09-12 | 1988-12-20 | Nippon Electric Co | |
JPS60167330A (en) * | 1983-11-14 | 1985-08-30 | ジ−・シ−・エ−・コ−ポレ−シヨン | Gas supply device of reactive ion etching equipment |
JPS60106336U (en) * | 1983-12-23 | 1985-07-19 | 株式会社日立国際電気 | plasma etching equipment |
JPH034025Y2 (en) * | 1983-12-23 | 1991-02-01 | ||
JPS60118236U (en) * | 1984-01-18 | 1985-08-09 | 株式会社日立国際電気 | Electrode for plasma etching equipment |
JPS61130494A (en) * | 1984-11-29 | 1986-06-18 | Tokuda Seisakusho Ltd | Plasma etching device |
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