JPS57131372A - Plasma etching device - Google Patents

Plasma etching device

Info

Publication number
JPS57131372A
JPS57131372A JP1614881A JP1614881A JPS57131372A JP S57131372 A JPS57131372 A JP S57131372A JP 1614881 A JP1614881 A JP 1614881A JP 1614881 A JP1614881 A JP 1614881A JP S57131372 A JPS57131372 A JP S57131372A
Authority
JP
Japan
Prior art keywords
gas
electrode
etched
vessel
route
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1614881A
Other languages
Japanese (ja)
Inventor
Tadahiro Nakamichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP1614881A priority Critical patent/JPS57131372A/en
Publication of JPS57131372A publication Critical patent/JPS57131372A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To make the supply of a reactive gas uniform and to make the rate of etching uniform in plasma etching of integrated circuits, etc., by providing a gas lead-in route and gas ejection ports as well as gas exhausting holes to an electrode disposed in a vaccum vessel.
CONSTITUTION: A sample 13 to be etched is placed on a lower electrode 4 placed in a vaccum vessel 2. An upper electrode 3 is formed of a part 3 having a gas lead-in route, parts 14 provided uniformly with many gas ejection holes and screws 15. A reactive gas is passed through a valve 10 then through the center of the part 3 and is supplied through the ejection ports 15 of the parts 14 into the vessel 2. This reactive gas is turned to plasma by the high frequency voltage applied between the electrode 3 and the electrode 4, by which the sample to be etched is etched. The gas completed of the reaction is sucked into a rotary pump through the exhausting port 17 provided to the electrode 4. This device is used for production, etc. of semiconductor integrated circuits.
COPYRIGHT: (C)1982,JPO&Japio
JP1614881A 1981-02-05 1981-02-05 Plasma etching device Pending JPS57131372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1614881A JPS57131372A (en) 1981-02-05 1981-02-05 Plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1614881A JPS57131372A (en) 1981-02-05 1981-02-05 Plasma etching device

Publications (1)

Publication Number Publication Date
JPS57131372A true JPS57131372A (en) 1982-08-14

Family

ID=11908410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1614881A Pending JPS57131372A (en) 1981-02-05 1981-02-05 Plasma etching device

Country Status (1)

Country Link
JP (1) JPS57131372A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947732A (en) * 1982-09-10 1984-03-17 Hitachi Ltd Semiconductor manufacturing apparatus
JPS6059078A (en) * 1983-09-12 1985-04-05 Nec Corp Dry etching apparatus
JPS60106336U (en) * 1983-12-23 1985-07-19 株式会社日立国際電気 plasma etching equipment
JPS60118236U (en) * 1984-01-18 1985-08-09 株式会社日立国際電気 Electrode for plasma etching equipment
JPS60167330A (en) * 1983-11-14 1985-08-30 ジ−・シ−・エ−・コ−ポレ−シヨン Gas supply device of reactive ion etching equipment
JPS61130494A (en) * 1984-11-29 1986-06-18 Tokuda Seisakusho Ltd Plasma etching device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128584A (en) * 1979-03-27 1980-10-04 Mitsubishi Electric Corp Plasma etching device
JPS5684478A (en) * 1979-12-10 1981-07-09 Matsushita Electronics Corp Apparatus for plasma treatment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128584A (en) * 1979-03-27 1980-10-04 Mitsubishi Electric Corp Plasma etching device
JPS5684478A (en) * 1979-12-10 1981-07-09 Matsushita Electronics Corp Apparatus for plasma treatment

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947732A (en) * 1982-09-10 1984-03-17 Hitachi Ltd Semiconductor manufacturing apparatus
JPS6059078A (en) * 1983-09-12 1985-04-05 Nec Corp Dry etching apparatus
JPS6366394B2 (en) * 1983-09-12 1988-12-20 Nippon Electric Co
JPS60167330A (en) * 1983-11-14 1985-08-30 ジ−・シ−・エ−・コ−ポレ−シヨン Gas supply device of reactive ion etching equipment
JPS60106336U (en) * 1983-12-23 1985-07-19 株式会社日立国際電気 plasma etching equipment
JPH034025Y2 (en) * 1983-12-23 1991-02-01
JPS60118236U (en) * 1984-01-18 1985-08-09 株式会社日立国際電気 Electrode for plasma etching equipment
JPS61130494A (en) * 1984-11-29 1986-06-18 Tokuda Seisakusho Ltd Plasma etching device

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