JPS5515290A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS5515290A JPS5515290A JP8907478A JP8907478A JPS5515290A JP S5515290 A JPS5515290 A JP S5515290A JP 8907478 A JP8907478 A JP 8907478A JP 8907478 A JP8907478 A JP 8907478A JP S5515290 A JPS5515290 A JP S5515290A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- sample
- gaas
- chamber
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To permit a minute work with less undercut by performing an etching for a GaAs in the plasma of a halide carbon containing chlride, boron, iodine and others in performing a selectable etching for the GaAs.
CONSTITUTION: A conductive cylinder 2 in which a sample 6 to be etched is included is provided in a crystal chamber 1, and a halide carbon 3 of CCl2F2,CF4 is introduced into the vaccum chamber 1 after making it in a vaccum condition by using a pump. Successively, a plasma is generated in the cylinder 2 by utilizing a RF power 4 provided on the outer circumference of the chamber 1 to etch a sample 6. In this case, the sample 6 has the compostion in which a photoresist film 9 having an opening by growing a GaAs layer 7 is provided on a GaAlAs substrate 8. However, according to such a process, the etching only for the layer 7 can be achieved and the undercut be reduced considerably. A desirable etching rate can be obtained by varying the relationships between the RF output and gas pressure.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8907478A JPS5515290A (en) | 1978-07-20 | 1978-07-20 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8907478A JPS5515290A (en) | 1978-07-20 | 1978-07-20 | Manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5515290A true JPS5515290A (en) | 1980-02-02 |
Family
ID=13960700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8907478A Pending JPS5515290A (en) | 1978-07-20 | 1978-07-20 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5515290A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58101429A (en) * | 1981-12-12 | 1983-06-16 | Semiconductor Res Found | Dry etching method |
JPS595655A (en) * | 1982-07-01 | 1984-01-12 | Fujitsu Ltd | Semiconductor device |
JPS5961073A (en) * | 1982-09-29 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS609173A (en) * | 1983-06-29 | 1985-01-18 | Fujitsu Ltd | Manufacture of field-effect type semiconductor device |
JPH01204425A (en) * | 1988-02-10 | 1989-08-17 | Toyota Central Res & Dev Lab Inc | Dry etching method of alxga1-xn |
CN110589756A (en) * | 2019-08-02 | 2019-12-20 | 南方科技大学 | Preparation method of curved surface nano structure |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51105272A (en) * | 1975-03-13 | 1976-09-17 | Fujitsu Ltd | ETSUCHINGUHOHO |
-
1978
- 1978-07-20 JP JP8907478A patent/JPS5515290A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51105272A (en) * | 1975-03-13 | 1976-09-17 | Fujitsu Ltd | ETSUCHINGUHOHO |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58101429A (en) * | 1981-12-12 | 1983-06-16 | Semiconductor Res Found | Dry etching method |
JPH03769B2 (en) * | 1981-12-12 | 1991-01-08 | Handotai Kenkyu Shinkokai | |
JPS595655A (en) * | 1982-07-01 | 1984-01-12 | Fujitsu Ltd | Semiconductor device |
JPH0216587B2 (en) * | 1982-07-01 | 1990-04-17 | Fujitsu Ltd | |
JPS5961073A (en) * | 1982-09-29 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0320063B2 (en) * | 1982-09-29 | 1991-03-18 | Fujitsu Ltd | |
JPS609173A (en) * | 1983-06-29 | 1985-01-18 | Fujitsu Ltd | Manufacture of field-effect type semiconductor device |
JPH01204425A (en) * | 1988-02-10 | 1989-08-17 | Toyota Central Res & Dev Lab Inc | Dry etching method of alxga1-xn |
CN110589756A (en) * | 2019-08-02 | 2019-12-20 | 南方科技大学 | Preparation method of curved surface nano structure |
CN110589756B (en) * | 2019-08-02 | 2020-11-10 | 南方科技大学 | Preparation method of curved surface nano structure |
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