JPS5515290A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5515290A
JPS5515290A JP8907478A JP8907478A JPS5515290A JP S5515290 A JPS5515290 A JP S5515290A JP 8907478 A JP8907478 A JP 8907478A JP 8907478 A JP8907478 A JP 8907478A JP S5515290 A JPS5515290 A JP S5515290A
Authority
JP
Japan
Prior art keywords
etching
sample
gaas
chamber
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8907478A
Other languages
Japanese (ja)
Inventor
Yoshihiro Todokoro
Masaru Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8907478A priority Critical patent/JPS5515290A/en
Publication of JPS5515290A publication Critical patent/JPS5515290A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To permit a minute work with less undercut by performing an etching for a GaAs in the plasma of a halide carbon containing chlride, boron, iodine and others in performing a selectable etching for the GaAs.
CONSTITUTION: A conductive cylinder 2 in which a sample 6 to be etched is included is provided in a crystal chamber 1, and a halide carbon 3 of CCl2F2,CF4 is introduced into the vaccum chamber 1 after making it in a vaccum condition by using a pump. Successively, a plasma is generated in the cylinder 2 by utilizing a RF power 4 provided on the outer circumference of the chamber 1 to etch a sample 6. In this case, the sample 6 has the compostion in which a photoresist film 9 having an opening by growing a GaAs layer 7 is provided on a GaAlAs substrate 8. However, according to such a process, the etching only for the layer 7 can be achieved and the undercut be reduced considerably. A desirable etching rate can be obtained by varying the relationships between the RF output and gas pressure.
COPYRIGHT: (C)1980,JPO&Japio
JP8907478A 1978-07-20 1978-07-20 Manufacturing method of semiconductor device Pending JPS5515290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8907478A JPS5515290A (en) 1978-07-20 1978-07-20 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8907478A JPS5515290A (en) 1978-07-20 1978-07-20 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5515290A true JPS5515290A (en) 1980-02-02

Family

ID=13960700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8907478A Pending JPS5515290A (en) 1978-07-20 1978-07-20 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5515290A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101429A (en) * 1981-12-12 1983-06-16 Semiconductor Res Found Dry etching method
JPS595655A (en) * 1982-07-01 1984-01-12 Fujitsu Ltd Semiconductor device
JPS5961073A (en) * 1982-09-29 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPS609173A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Manufacture of field-effect type semiconductor device
JPH01204425A (en) * 1988-02-10 1989-08-17 Toyota Central Res & Dev Lab Inc Dry etching method of alxga1-xn
CN110589756A (en) * 2019-08-02 2019-12-20 南方科技大学 Preparation method of curved surface nano structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51105272A (en) * 1975-03-13 1976-09-17 Fujitsu Ltd ETSUCHINGUHOHO

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51105272A (en) * 1975-03-13 1976-09-17 Fujitsu Ltd ETSUCHINGUHOHO

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101429A (en) * 1981-12-12 1983-06-16 Semiconductor Res Found Dry etching method
JPH03769B2 (en) * 1981-12-12 1991-01-08 Handotai Kenkyu Shinkokai
JPS595655A (en) * 1982-07-01 1984-01-12 Fujitsu Ltd Semiconductor device
JPH0216587B2 (en) * 1982-07-01 1990-04-17 Fujitsu Ltd
JPS5961073A (en) * 1982-09-29 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPH0320063B2 (en) * 1982-09-29 1991-03-18 Fujitsu Ltd
JPS609173A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Manufacture of field-effect type semiconductor device
JPH01204425A (en) * 1988-02-10 1989-08-17 Toyota Central Res & Dev Lab Inc Dry etching method of alxga1-xn
CN110589756A (en) * 2019-08-02 2019-12-20 南方科技大学 Preparation method of curved surface nano structure
CN110589756B (en) * 2019-08-02 2020-11-10 南方科技大学 Preparation method of curved surface nano structure

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