JPS563680A - Etching method - Google Patents

Etching method

Info

Publication number
JPS563680A
JPS563680A JP7989579A JP7989579A JPS563680A JP S563680 A JPS563680 A JP S563680A JP 7989579 A JP7989579 A JP 7989579A JP 7989579 A JP7989579 A JP 7989579A JP S563680 A JPS563680 A JP S563680A
Authority
JP
Japan
Prior art keywords
aluminum
etching
plasma
gas
ccl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7989579A
Other languages
Japanese (ja)
Other versions
JPS5913592B2 (en
Inventor
Haruhiko Abe
Kouji Harada
Natsuo Tsubouchi
Masahiro Yoneda
Yoshikazu Obayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7989579A priority Critical patent/JPS5913592B2/en
Publication of JPS563680A publication Critical patent/JPS563680A/en
Publication of JPS5913592B2 publication Critical patent/JPS5913592B2/en
Expired legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To perform plasma etching with excellent reproducibility, by performing sputter etching and plasma etching of aluminum which is internal wiring material of LST.
CONSTITUTION: The lag of the start of plasma etching of aluminum behind the anticipated starting time is corrected. For example, a resist 5 of desired shape is formed on the principal surface of aluminum (or aluminum alloy) film 3 made on a silicon substrate 1. The substrate 1 is placed in an etching chamber, which is evacuated, then an inert gas such as argon is introduced and plasma is generated. Suitable arrangement of the sample and the electrodes for generating plasma causes sputter etching by Ar ions 6, hereby alumina 4 is removed. Subsequently, CCl4 gas 7 is introduced into the reaction chamber, and the aluminum 3 is plasma etched. Because CCl4 gas 7 etches only the aluminum 3, the etching starts without being late for the anticipated starting time.
COPYRIGHT: (C)1981,JPO&Japio
JP7989579A 1979-06-22 1979-06-22 Etching method Expired JPS5913592B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7989579A JPS5913592B2 (en) 1979-06-22 1979-06-22 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7989579A JPS5913592B2 (en) 1979-06-22 1979-06-22 Etching method

Publications (2)

Publication Number Publication Date
JPS563680A true JPS563680A (en) 1981-01-14
JPS5913592B2 JPS5913592B2 (en) 1984-03-30

Family

ID=13703004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7989579A Expired JPS5913592B2 (en) 1979-06-22 1979-06-22 Etching method

Country Status (1)

Country Link
JP (1) JPS5913592B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390394A (en) * 1981-01-27 1983-06-28 Siemens Aktiengesellschaft Method of structuring with metal oxide masks by reactive ion-beam etching
US5411631A (en) * 1992-11-11 1995-05-02 Tokyo Electron Limited Dry etching method
CN112233976A (en) * 2020-12-17 2021-01-15 度亘激光技术（苏州）有限公司 Substrate etching method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390394A (en) * 1981-01-27 1983-06-28 Siemens Aktiengesellschaft Method of structuring with metal oxide masks by reactive ion-beam etching
US5411631A (en) * 1992-11-11 1995-05-02 Tokyo Electron Limited Dry etching method
CN112233976A (en) * 2020-12-17 2021-01-15 度亘激光技术（苏州）有限公司 Substrate etching method
CN112233976B (en) * 2020-12-17 2021-03-05 度亘激光技术（苏州）有限公司 Substrate etching method

Also Published As

Publication number Publication date
JPS5913592B2 (en) 1984-03-30

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