JPS5747800A - Etching method for crystal substrate - Google Patents

Etching method for crystal substrate

Info

Publication number
JPS5747800A
JPS5747800A JP12074380A JP12074380A JPS5747800A JP S5747800 A JPS5747800 A JP S5747800A JP 12074380 A JP12074380 A JP 12074380A JP 12074380 A JP12074380 A JP 12074380A JP S5747800 A JPS5747800 A JP S5747800A
Authority
JP
Japan
Prior art keywords
crystal substrate
etching
substrate
steam
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12074380A
Other languages
Japanese (ja)
Other versions
JPS643840B2 (en
Inventor
Toshimitsu Shirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP12074380A priority Critical patent/JPS5747800A/en
Publication of JPS5747800A publication Critical patent/JPS5747800A/en
Publication of JPS643840B2 publication Critical patent/JPS643840B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To increase the etching speed by introducing steam into an etching chamber when a crystal substrate is etched with ion beams.
CONSTITUTION: A crystal substrate 8 is mounted on a sample holder 7 in an etching chamber 2 evacuated with an exhaust system 3, and ions of an active or inert gas such as He or CF4 introduced into an ion gun chamber 1 from the inlet 4 are allowed to collide against said substrate 8 to etch the substrate 8. In said ion beam etching method, by introducing a prescribed amount of steam into the etching chamber 2 from a steam generator 6 through a valve 5, the sample 8 can be etched at a speed about 4 times as high as a conventional method.
COPYRIGHT: (C)1982,JPO&Japio
JP12074380A 1980-09-01 1980-09-01 Etching method for crystal substrate Granted JPS5747800A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12074380A JPS5747800A (en) 1980-09-01 1980-09-01 Etching method for crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12074380A JPS5747800A (en) 1980-09-01 1980-09-01 Etching method for crystal substrate

Publications (2)

Publication Number Publication Date
JPS5747800A true JPS5747800A (en) 1982-03-18
JPS643840B2 JPS643840B2 (en) 1989-01-23

Family

ID=14793879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12074380A Granted JPS5747800A (en) 1980-09-01 1980-09-01 Etching method for crystal substrate

Country Status (1)

Country Link
JP (1) JPS5747800A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05125688A (en) * 1991-10-30 1993-05-21 Kobayashi Seisakusho:Kk Twin-wire paper machine
WO1996032741A1 (en) * 1995-04-13 1996-10-17 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US5626716A (en) * 1995-09-29 1997-05-06 Lam Research Corporation Plasma etching of semiconductors

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05125688A (en) * 1991-10-30 1993-05-21 Kobayashi Seisakusho:Kk Twin-wire paper machine
WO1996032741A1 (en) * 1995-04-13 1996-10-17 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US6140655A (en) * 1995-04-13 2000-10-31 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
EP1205967A2 (en) * 1995-04-13 2002-05-15 North Carolina State University Method for water vapour enhanced ion-beam machining
EP1205967A3 (en) * 1995-04-13 2005-03-02 North Carolina State University Method for water vapour enhanced ion-beam machining
US5626716A (en) * 1995-09-29 1997-05-06 Lam Research Corporation Plasma etching of semiconductors

Also Published As

Publication number Publication date
JPS643840B2 (en) 1989-01-23

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