JPS55104484A - Ion etching method - Google Patents

Ion etching method

Info

Publication number
JPS55104484A
JPS55104484A JP911779A JP911779A JPS55104484A JP S55104484 A JPS55104484 A JP S55104484A JP 911779 A JP911779 A JP 911779A JP 911779 A JP911779 A JP 911779A JP S55104484 A JPS55104484 A JP S55104484A
Authority
JP
Japan
Prior art keywords
gas
etched
halogen element
objects
contg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP911779A
Other languages
Japanese (ja)
Inventor
Haruo Okano
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP911779A priority Critical patent/JPS55104484A/en
Publication of JPS55104484A publication Critical patent/JPS55104484A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To etch selectively one of two different materials, by producing plasma in a gas contg. halogen element, and by casuing ions in the plasma to collide against a gas contg. no halogen element in an isolated sample chamber.
CONSTITUTION: A gas contg. a halogen element, e.g., C2F6 gas, is introduced into a discharging chamber composed of a cover 12 for producing press. difference and an ion source. The gas is ionized by discharge and is released as an ion beam 7, which is irradiated on the objects 14 to be etched placed in a sample chamber 19, the objects 14 having materials different from each other. Introduction of a gas contg. no halogen element, e.g., H or O atom through an inlet 17 to the chamber 19 causes selective etching of the object to be etched. That is, change in the ratio of addn. of H2 or O2 to the indroduced gas, e.g., C2H6, causes to adjust the etching speed of the objects to be etched. Consequently two materials different from each other are etched selectively.
COPYRIGHT: (C)1980,JPO&Japio
JP911779A 1979-01-31 1979-01-31 Ion etching method Pending JPS55104484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP911779A JPS55104484A (en) 1979-01-31 1979-01-31 Ion etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP911779A JPS55104484A (en) 1979-01-31 1979-01-31 Ion etching method

Publications (1)

Publication Number Publication Date
JPS55104484A true JPS55104484A (en) 1980-08-09

Family

ID=11711682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP911779A Pending JPS55104484A (en) 1979-01-31 1979-01-31 Ion etching method

Country Status (1)

Country Link
JP (1) JPS55104484A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04257801A (en) * 1991-02-13 1992-09-14 Sharp Corp Manufacture of polarized light diffraction element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04257801A (en) * 1991-02-13 1992-09-14 Sharp Corp Manufacture of polarized light diffraction element

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