JPS55104484A - Ion etching method - Google Patents
Ion etching methodInfo
- Publication number
- JPS55104484A JPS55104484A JP911779A JP911779A JPS55104484A JP S55104484 A JPS55104484 A JP S55104484A JP 911779 A JP911779 A JP 911779A JP 911779 A JP911779 A JP 911779A JP S55104484 A JPS55104484 A JP S55104484A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etched
- halogen element
- objects
- contg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To etch selectively one of two different materials, by producing plasma in a gas contg. halogen element, and by casuing ions in the plasma to collide against a gas contg. no halogen element in an isolated sample chamber.
CONSTITUTION: A gas contg. a halogen element, e.g., C2F6 gas, is introduced into a discharging chamber composed of a cover 12 for producing press. difference and an ion source. The gas is ionized by discharge and is released as an ion beam 7, which is irradiated on the objects 14 to be etched placed in a sample chamber 19, the objects 14 having materials different from each other. Introduction of a gas contg. no halogen element, e.g., H or O atom through an inlet 17 to the chamber 19 causes selective etching of the object to be etched. That is, change in the ratio of addn. of H2 or O2 to the indroduced gas, e.g., C2H6, causes to adjust the etching speed of the objects to be etched. Consequently two materials different from each other are etched selectively.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP911779A JPS55104484A (en) | 1979-01-31 | 1979-01-31 | Ion etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP911779A JPS55104484A (en) | 1979-01-31 | 1979-01-31 | Ion etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55104484A true JPS55104484A (en) | 1980-08-09 |
Family
ID=11711682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP911779A Pending JPS55104484A (en) | 1979-01-31 | 1979-01-31 | Ion etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55104484A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04257801A (en) * | 1991-02-13 | 1992-09-14 | Sharp Corp | Manufacture of polarized light diffraction element |
-
1979
- 1979-01-31 JP JP911779A patent/JPS55104484A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04257801A (en) * | 1991-02-13 | 1992-09-14 | Sharp Corp | Manufacture of polarized light diffraction element |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5378170A (en) | Continuous processor for gas plasma etching | |
JPS5329076A (en) | Plasma treating apparatus of semiconductor substrates | |
JPS5747876A (en) | Plasma etching apparatus and method | |
JPS55134175A (en) | Microwave plasma etching unit | |
JPS5656636A (en) | Processing method of fine pattern | |
JPS5288900A (en) | Ion beam machine tool | |
JPS55104484A (en) | Ion etching method | |
JPS57174466A (en) | Dry etching method | |
JPS5254897A (en) | Plasma ion source for solid materials | |
JPS5460236A (en) | Etching method | |
JPS54102872A (en) | Ion etching method | |
JPS57200569A (en) | Apparatus for treating surface with gas decomposed by light | |
JPS5381289A (en) | Ion-molecule reaction mass spectrometer | |
JPS572585A (en) | Forming method for aluminum electrode | |
JPS5747800A (en) | Etching method for crystal substrate | |
JPS57116774A (en) | Etching method | |
JPS53114742A (en) | Plasma ashing method | |
JPS5687665A (en) | Ion etching method | |
JPS5252099A (en) | Plasma ion source | |
JPS5338263A (en) | Plasma treating apparatus of semiconductors | |
JPS563680A (en) | Etching method | |
JPS57192264A (en) | Method of etching | |
JPS544571A (en) | Plasma treating apparatus | |
JPS57138060A (en) | Manufacture for magnetic recording medium | |
JPS5651582A (en) | Gas etching method |