JPS5460236A - Etching method - Google Patents

Etching method

Info

Publication number
JPS5460236A
JPS5460236A JP12693277A JP12693277A JPS5460236A JP S5460236 A JPS5460236 A JP S5460236A JP 12693277 A JP12693277 A JP 12693277A JP 12693277 A JP12693277 A JP 12693277A JP S5460236 A JPS5460236 A JP S5460236A
Authority
JP
Japan
Prior art keywords
etching
gas
ion gun
speed
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12693277A
Other languages
Japanese (ja)
Inventor
Masahiko Yasuoka
Shigeji Kinoshita
Kazushi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12693277A priority Critical patent/JPS5460236A/en
Publication of JPS5460236A publication Critical patent/JPS5460236A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enhance the selectivity of etching by using a halogen or its compound as a gas for etching in order to increase the speed of etching in the etching of semiconductor, insulator, etc.
CONSTITUTION: A halogen compound, e.g., CF4, etc., is introduced from the inlet 6 for etching gas of the ion gun 2 and the pressure of the etching room 1 and the ion gun 2 is kept at a low pressure of approx. 10-4 to 10-5 torr while exhausting gas from the exhaust port 9. Then, the CF4 gas introduced is changed into plasmatic gas by means of the hot filament 3, the magnet 4, and cathode 5 in the ion gun 2, and then ions, e.g., CF+ 3, CF+ 2, CF+, F+, etc., are drawn into the etching room 1 by means of the accelerating electrode 7 and the drawing-out electrode 8 to make a dry etching for a material to be subjected to etching 11. Thus, it is possible to increase the speed of etching and also suppress the deterioration of resistors
COPYRIGHT: (C)1979,JPO&Japio
JP12693277A 1977-10-21 1977-10-21 Etching method Pending JPS5460236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12693277A JPS5460236A (en) 1977-10-21 1977-10-21 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12693277A JPS5460236A (en) 1977-10-21 1977-10-21 Etching method

Publications (1)

Publication Number Publication Date
JPS5460236A true JPS5460236A (en) 1979-05-15

Family

ID=14947459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12693277A Pending JPS5460236A (en) 1977-10-21 1977-10-21 Etching method

Country Status (1)

Country Link
JP (1) JPS5460236A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661310A (en) * 1979-10-05 1981-05-26 Sigma Tau Ind Farmaceuti Nutritious drug for nonoral administration
JPS56137635A (en) * 1980-03-31 1981-10-27 Toshiba Corp Ion etching method
JPS63209553A (en) * 1987-02-27 1988-08-31 Dainippon Pharmaceut Co Ltd Gel and production thereof
JPH01129256A (en) * 1987-11-13 1989-05-22 Seiko Instr & Electron Ltd Method for correcting pattern film
JPH05339762A (en) * 1992-01-31 1993-12-21 Hughes Aircraft Co Reactive gas for plasma assisted chemical etching and method for stable plasma etching of substrate
US5380401A (en) * 1993-01-14 1995-01-10 Micron Technology, Inc. Method to remove fluorine residues from bond pads
JPH07193044A (en) * 1992-12-16 1995-07-28 Science & Tech Agency Pattern etching method for sic
JPH09134000A (en) * 1996-09-02 1997-05-20 Seiko Instr Inc Pattern film correcting device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661310A (en) * 1979-10-05 1981-05-26 Sigma Tau Ind Farmaceuti Nutritious drug for nonoral administration
JPS56137635A (en) * 1980-03-31 1981-10-27 Toshiba Corp Ion etching method
JPS63209553A (en) * 1987-02-27 1988-08-31 Dainippon Pharmaceut Co Ltd Gel and production thereof
JPH0659175B2 (en) * 1987-02-27 1994-08-10 大日本製薬株式会社 Gel and method for producing the same
JPH01129256A (en) * 1987-11-13 1989-05-22 Seiko Instr & Electron Ltd Method for correcting pattern film
JPH05339762A (en) * 1992-01-31 1993-12-21 Hughes Aircraft Co Reactive gas for plasma assisted chemical etching and method for stable plasma etching of substrate
JPH07193044A (en) * 1992-12-16 1995-07-28 Science & Tech Agency Pattern etching method for sic
US5380401A (en) * 1993-01-14 1995-01-10 Micron Technology, Inc. Method to remove fluorine residues from bond pads
JPH09134000A (en) * 1996-09-02 1997-05-20 Seiko Instr Inc Pattern film correcting device

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