JPS5460236A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS5460236A JPS5460236A JP12693277A JP12693277A JPS5460236A JP S5460236 A JPS5460236 A JP S5460236A JP 12693277 A JP12693277 A JP 12693277A JP 12693277 A JP12693277 A JP 12693277A JP S5460236 A JPS5460236 A JP S5460236A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- ion gun
- speed
- increase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To enhance the selectivity of etching by using a halogen or its compound as a gas for etching in order to increase the speed of etching in the etching of semiconductor, insulator, etc.
CONSTITUTION: A halogen compound, e.g., CF4, etc., is introduced from the inlet 6 for etching gas of the ion gun 2 and the pressure of the etching room 1 and the ion gun 2 is kept at a low pressure of approx. 10-4 to 10-5 torr while exhausting gas from the exhaust port 9. Then, the CF4 gas introduced is changed into plasmatic gas by means of the hot filament 3, the magnet 4, and cathode 5 in the ion gun 2, and then ions, e.g., CF+ 3, CF+ 2, CF+, F+, etc., are drawn into the etching room 1 by means of the accelerating electrode 7 and the drawing-out electrode 8 to make a dry etching for a material to be subjected to etching 11. Thus, it is possible to increase the speed of etching and also suppress the deterioration of resistors
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12693277A JPS5460236A (en) | 1977-10-21 | 1977-10-21 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12693277A JPS5460236A (en) | 1977-10-21 | 1977-10-21 | Etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5460236A true JPS5460236A (en) | 1979-05-15 |
Family
ID=14947459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12693277A Pending JPS5460236A (en) | 1977-10-21 | 1977-10-21 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5460236A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5661310A (en) * | 1979-10-05 | 1981-05-26 | Sigma Tau Ind Farmaceuti | Nutritious drug for nonoral administration |
JPS56137635A (en) * | 1980-03-31 | 1981-10-27 | Toshiba Corp | Ion etching method |
JPS63209553A (en) * | 1987-02-27 | 1988-08-31 | Dainippon Pharmaceut Co Ltd | Gel and production thereof |
JPH01129256A (en) * | 1987-11-13 | 1989-05-22 | Seiko Instr & Electron Ltd | Method for correcting pattern film |
JPH05339762A (en) * | 1992-01-31 | 1993-12-21 | Hughes Aircraft Co | Reactive gas for plasma assisted chemical etching and method for stable plasma etching of substrate |
US5380401A (en) * | 1993-01-14 | 1995-01-10 | Micron Technology, Inc. | Method to remove fluorine residues from bond pads |
JPH07193044A (en) * | 1992-12-16 | 1995-07-28 | Science & Tech Agency | Pattern etching method for sic |
JPH09134000A (en) * | 1996-09-02 | 1997-05-20 | Seiko Instr Inc | Pattern film correcting device |
-
1977
- 1977-10-21 JP JP12693277A patent/JPS5460236A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5661310A (en) * | 1979-10-05 | 1981-05-26 | Sigma Tau Ind Farmaceuti | Nutritious drug for nonoral administration |
JPS56137635A (en) * | 1980-03-31 | 1981-10-27 | Toshiba Corp | Ion etching method |
JPS63209553A (en) * | 1987-02-27 | 1988-08-31 | Dainippon Pharmaceut Co Ltd | Gel and production thereof |
JPH0659175B2 (en) * | 1987-02-27 | 1994-08-10 | 大日本製薬株式会社 | Gel and method for producing the same |
JPH01129256A (en) * | 1987-11-13 | 1989-05-22 | Seiko Instr & Electron Ltd | Method for correcting pattern film |
JPH05339762A (en) * | 1992-01-31 | 1993-12-21 | Hughes Aircraft Co | Reactive gas for plasma assisted chemical etching and method for stable plasma etching of substrate |
JPH07193044A (en) * | 1992-12-16 | 1995-07-28 | Science & Tech Agency | Pattern etching method for sic |
US5380401A (en) * | 1993-01-14 | 1995-01-10 | Micron Technology, Inc. | Method to remove fluorine residues from bond pads |
JPH09134000A (en) * | 1996-09-02 | 1997-05-20 | Seiko Instr Inc | Pattern film correcting device |
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