JPS56137635A - Ion etching method - Google Patents
Ion etching methodInfo
- Publication number
- JPS56137635A JPS56137635A JP4023980A JP4023980A JPS56137635A JP S56137635 A JPS56137635 A JP S56137635A JP 4023980 A JP4023980 A JP 4023980A JP 4023980 A JP4023980 A JP 4023980A JP S56137635 A JPS56137635 A JP S56137635A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- cathode
- silicon oxide
- etching
- electric discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title 1
- 238000000992 sputter etching Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 125000001309 chloro group Chemical group Cl* 0.000 abstract 1
- 229910052740 iodine Inorganic materials 0.000 abstract 1
- 239000011630 iodine Substances 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 230000009257 reactivity Effects 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To selectively etch high melting-point metals such as silicon, molybdenum, tungsten, etc. of monocrystal and multicrystal form and their silicides in a sample chamber with gaseous ion by introducing a single gas of halogen element in to an electric discharge chamber and dissociating it. CONSTITUTION:A permanent magnet 7 is deposited in the center of a cathode 6 and a magnetic field and a DC field between an anode 1 and a cathode 6 are caused to directly cross each other in an electric discharge clearance 2. Cl2 is introduced 3 and impacted by an electronic cycloid motion so that it is ionized to become a plasma. If the cathode 6 is maintained at a negative potential, a positive ion beam 5 is pulled out of a window 4, etching an objected to be etched 12 on a rotary table 14 inside a sample chamber. If an incident angle is set at theta and a gas containing carbon and halogen such as CCl4 is used as an etching gas to etch silicon oxide and silicon, silicon is quickly etched because the reactivity of dissociated Cl atom and silicon oxide is low. If bromine and iodine are used, the selectivity of silicon oxide is further enhanced, thus enabling a high-speed and selective etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4023980A JPS56137635A (en) | 1980-03-31 | 1980-03-31 | Ion etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4023980A JPS56137635A (en) | 1980-03-31 | 1980-03-31 | Ion etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56137635A true JPS56137635A (en) | 1981-10-27 |
Family
ID=12575158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4023980A Pending JPS56137635A (en) | 1980-03-31 | 1980-03-31 | Ion etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56137635A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62111432A (en) * | 1985-11-08 | 1987-05-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4698126A (en) * | 1985-03-18 | 1987-10-06 | U.S. Philips Corporation | Method of manufacturing a semiconductor device by plasma etching of a double layer |
| EP0284795A2 (en) * | 1987-03-30 | 1988-10-05 | International Business Machines Corporation | Anisotropic etch process for tungsten metallurgy |
| EP0565212A2 (en) * | 1986-12-19 | 1993-10-13 | Applied Materials, Inc. | Iodine etch process for silicon and silicides |
| JPH0658829U (en) * | 1993-01-26 | 1994-08-16 | タイジ株式会社 | Onsen |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5368075A (en) * | 1976-11-29 | 1978-06-17 | Nec Corp | Manufacture of element containing micro pattern |
| JPS5460236A (en) * | 1977-10-21 | 1979-05-15 | Mitsubishi Electric Corp | Etching method |
-
1980
- 1980-03-31 JP JP4023980A patent/JPS56137635A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5368075A (en) * | 1976-11-29 | 1978-06-17 | Nec Corp | Manufacture of element containing micro pattern |
| JPS5460236A (en) * | 1977-10-21 | 1979-05-15 | Mitsubishi Electric Corp | Etching method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698126A (en) * | 1985-03-18 | 1987-10-06 | U.S. Philips Corporation | Method of manufacturing a semiconductor device by plasma etching of a double layer |
| JPS62111432A (en) * | 1985-11-08 | 1987-05-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| EP0565212A2 (en) * | 1986-12-19 | 1993-10-13 | Applied Materials, Inc. | Iodine etch process for silicon and silicides |
| US5874362A (en) * | 1986-12-19 | 1999-02-23 | Applied Materials, Inc. | Bromine and iodine etch process for silicon and silicides |
| EP0284795A2 (en) * | 1987-03-30 | 1988-10-05 | International Business Machines Corporation | Anisotropic etch process for tungsten metallurgy |
| JPH0658829U (en) * | 1993-01-26 | 1994-08-16 | タイジ株式会社 | Onsen |
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