JPS5562169A - Ion-etching method - Google Patents

Ion-etching method

Info

Publication number
JPS5562169A
JPS5562169A JP13372178A JP13372178A JPS5562169A JP S5562169 A JPS5562169 A JP S5562169A JP 13372178 A JP13372178 A JP 13372178A JP 13372178 A JP13372178 A JP 13372178A JP S5562169 A JPS5562169 A JP S5562169A
Authority
JP
Japan
Prior art keywords
etching
ion
substrate
etched
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13372178A
Other languages
Japanese (ja)
Inventor
Haruo Okano
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13372178A priority Critical patent/JPS5562169A/en
Publication of JPS5562169A publication Critical patent/JPS5562169A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To detect the end point of etching surely, by measuring an electirc current flowing through a Si substrate in ion-etching of a thermally oxidized film on the Si substrate. CONSTITUTION:In ion-etching of the oxide film on a semiconductor Si substrate, an ion source (a), a shutter mechanism, and a working chamber C are built in the same vacuum vessel. C2F6 gas is introduced in the chamber for ion source (a), in which are arranged a box-shaped cathode 12, a permanent magnet 11, and a flat plate-shaped anode 13 to form a closed loop cross magnetic field through an annular slit 14. C2F6 gas collides with space charges which revolve along the above described magnetic field to form plasma. By the negative voltage of the cathode 12, ions in the plasma are taken out as a beam 17 so as to ion-etch the material 25 to be etched. During the process, the electric current flowing through the Si substrate to be etched is measured by an ampere meter 29. When the end point of etching is detected by measuring the electric current which increases with the progress of the etching to a constant value, the ion beam 17 is shaded by a shutter 23 to terminate the etching.
JP13372178A 1978-11-01 1978-11-01 Ion-etching method Pending JPS5562169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13372178A JPS5562169A (en) 1978-11-01 1978-11-01 Ion-etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13372178A JPS5562169A (en) 1978-11-01 1978-11-01 Ion-etching method

Publications (1)

Publication Number Publication Date
JPS5562169A true JPS5562169A (en) 1980-05-10

Family

ID=15111347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13372178A Pending JPS5562169A (en) 1978-11-01 1978-11-01 Ion-etching method

Country Status (1)

Country Link
JP (1) JPS5562169A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482783A1 (en) * 1980-05-16 1981-11-20 Varian Associates METHOD OF DETECTING THE FINAL INSTANT FOR PHYSICAL ATTACK PROCESSING
JPS5732376A (en) * 1980-07-31 1982-02-22 Fujitsu Ltd Dry etching method
US4759817A (en) * 1986-05-15 1988-07-26 Seiichiro Aigo Apparatus for etching semiconductor material
US4810335A (en) * 1987-01-20 1989-03-07 Siemens Aktiengesellschaft Method for monitoring etching processes
US4902631A (en) * 1988-10-28 1990-02-20 At&T Bell Laboratories Monitoring the fabrication of semiconductor devices by photon induced electron emission
US5273610A (en) * 1992-06-23 1993-12-28 Association Institutions For Material Sciences, Inc. Apparatus and method for determining power in plasma processing
US6181410B1 (en) 1997-05-29 2001-01-30 Seiko Instruments Inc. Oscillating motor, measurement device for measuring distance, speed or direction using a laser light, and vehicle having the measurement device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482783A1 (en) * 1980-05-16 1981-11-20 Varian Associates METHOD OF DETECTING THE FINAL INSTANT FOR PHYSICAL ATTACK PROCESSING
JPS5732376A (en) * 1980-07-31 1982-02-22 Fujitsu Ltd Dry etching method
US4759817A (en) * 1986-05-15 1988-07-26 Seiichiro Aigo Apparatus for etching semiconductor material
US4810335A (en) * 1987-01-20 1989-03-07 Siemens Aktiengesellschaft Method for monitoring etching processes
US4902631A (en) * 1988-10-28 1990-02-20 At&T Bell Laboratories Monitoring the fabrication of semiconductor devices by photon induced electron emission
US5273610A (en) * 1992-06-23 1993-12-28 Association Institutions For Material Sciences, Inc. Apparatus and method for determining power in plasma processing
US6181410B1 (en) 1997-05-29 2001-01-30 Seiko Instruments Inc. Oscillating motor, measurement device for measuring distance, speed or direction using a laser light, and vehicle having the measurement device

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