JPS52127168A - Etching unit - Google Patents

Etching unit

Info

Publication number
JPS52127168A
JPS52127168A JP4364676A JP4364676A JPS52127168A JP S52127168 A JPS52127168 A JP S52127168A JP 4364676 A JP4364676 A JP 4364676A JP 4364676 A JP4364676 A JP 4364676A JP S52127168 A JPS52127168 A JP S52127168A
Authority
JP
Japan
Prior art keywords
etching
etching unit
etched
halogen
samples
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4364676A
Other languages
Japanese (ja)
Other versions
JPS5622367B2 (en
Inventor
Masanao Itoga
Minoru Inoue
Katsuhiro Fujino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4364676A priority Critical patent/JPS52127168A/en
Publication of JPS52127168A publication Critical patent/JPS52127168A/en
Publication of JPS5622367B2 publication Critical patent/JPS5622367B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To eliminate side etch and to increase etching by previously applying D/A voltage to samples which should be etched, by connecting direct current, low frequency or high frequency power to the opposite electrode or the coil electrode and then by etching with plasma generating on gas such as halogen among these.
COPYRIGHT: (C)1977,JPO&Japio
JP4364676A 1976-04-19 1976-04-19 Etching unit Granted JPS52127168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4364676A JPS52127168A (en) 1976-04-19 1976-04-19 Etching unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4364676A JPS52127168A (en) 1976-04-19 1976-04-19 Etching unit

Publications (2)

Publication Number Publication Date
JPS52127168A true JPS52127168A (en) 1977-10-25
JPS5622367B2 JPS5622367B2 (en) 1981-05-25

Family

ID=12669618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4364676A Granted JPS52127168A (en) 1976-04-19 1976-04-19 Etching unit

Country Status (1)

Country Link
JP (1) JPS52127168A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5480080A (en) * 1977-12-09 1979-06-26 Hitachi Ltd Etching device
JPS5643727A (en) * 1979-09-17 1981-04-22 Mitsubishi Electric Corp Pattern formation on film to be etched
JPS6079726A (en) * 1983-10-03 1985-05-07 テ−ガル・コ−ポレ−シヨン Plasma reactor device and method
JPS60153129A (en) * 1984-01-20 1985-08-12 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPH01286911A (en) * 1988-05-13 1989-11-17 Semiconductor Energy Lab Co Ltd Formation of carbon film
JPH0280579A (en) * 1988-09-16 1990-03-20 Semiconductor Energy Lab Co Ltd Method and equipment for plasma reaction
US6048435A (en) * 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
US6127277A (en) * 1996-07-03 2000-10-03 Tegal Corporation Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls
US6354240B1 (en) 1996-07-03 2002-03-12 Tegal Corporation Plasma etch reactor having a plurality of magnets
US6492280B1 (en) 1996-07-03 2002-12-10 Tegal Corporation Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5480080A (en) * 1977-12-09 1979-06-26 Hitachi Ltd Etching device
JPS6032972B2 (en) * 1977-12-09 1985-07-31 株式会社日立製作所 Etching device
JPS5643727A (en) * 1979-09-17 1981-04-22 Mitsubishi Electric Corp Pattern formation on film to be etched
JPS6079726A (en) * 1983-10-03 1985-05-07 テ−ガル・コ−ポレ−シヨン Plasma reactor device and method
JPH0469416B2 (en) * 1983-10-03 1992-11-06 Tegal Corp
JPS60153129A (en) * 1984-01-20 1985-08-12 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPH01286911A (en) * 1988-05-13 1989-11-17 Semiconductor Energy Lab Co Ltd Formation of carbon film
JPH0280579A (en) * 1988-09-16 1990-03-20 Semiconductor Energy Lab Co Ltd Method and equipment for plasma reaction
US6048435A (en) * 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
US6127277A (en) * 1996-07-03 2000-10-03 Tegal Corporation Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls
US6190496B1 (en) 1996-07-03 2001-02-20 Tegal Corporation Plasma etch reactor and method for emerging films
US6354240B1 (en) 1996-07-03 2002-03-12 Tegal Corporation Plasma etch reactor having a plurality of magnets
US6410448B1 (en) 1996-07-03 2002-06-25 Tegal Corporation Plasma etch reactor and method for emerging films
US6492280B1 (en) 1996-07-03 2002-12-10 Tegal Corporation Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls
US6500314B1 (en) 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6620335B1 (en) 1996-07-03 2003-09-16 Tegal Corporation Plasma etch reactor and method
US6905969B2 (en) 1996-07-03 2005-06-14 Tegal Corporation Plasma etch reactor and method

Also Published As

Publication number Publication date
JPS5622367B2 (en) 1981-05-25

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