JPS52127168A - Etching unit - Google Patents
Etching unitInfo
- Publication number
- JPS52127168A JPS52127168A JP4364676A JP4364676A JPS52127168A JP S52127168 A JPS52127168 A JP S52127168A JP 4364676 A JP4364676 A JP 4364676A JP 4364676 A JP4364676 A JP 4364676A JP S52127168 A JPS52127168 A JP S52127168A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etching unit
- etched
- halogen
- samples
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To eliminate side etch and to increase etching by previously applying D/A voltage to samples which should be etched, by connecting direct current, low frequency or high frequency power to the opposite electrode or the coil electrode and then by etching with plasma generating on gas such as halogen among these.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4364676A JPS52127168A (en) | 1976-04-19 | 1976-04-19 | Etching unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4364676A JPS52127168A (en) | 1976-04-19 | 1976-04-19 | Etching unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52127168A true JPS52127168A (en) | 1977-10-25 |
JPS5622367B2 JPS5622367B2 (en) | 1981-05-25 |
Family
ID=12669618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4364676A Granted JPS52127168A (en) | 1976-04-19 | 1976-04-19 | Etching unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52127168A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5480080A (en) * | 1977-12-09 | 1979-06-26 | Hitachi Ltd | Etching device |
JPS5643727A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Pattern formation on film to be etched |
JPS6079726A (en) * | 1983-10-03 | 1985-05-07 | テ−ガル・コ−ポレ−シヨン | Plasma reactor device and method |
JPS60153129A (en) * | 1984-01-20 | 1985-08-12 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
JPH01286911A (en) * | 1988-05-13 | 1989-11-17 | Semiconductor Energy Lab Co Ltd | Formation of carbon film |
JPH0280579A (en) * | 1988-09-16 | 1990-03-20 | Semiconductor Energy Lab Co Ltd | Method and equipment for plasma reaction |
US6048435A (en) * | 1996-07-03 | 2000-04-11 | Tegal Corporation | Plasma etch reactor and method for emerging films |
US6127277A (en) * | 1996-07-03 | 2000-10-03 | Tegal Corporation | Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls |
US6354240B1 (en) | 1996-07-03 | 2002-03-12 | Tegal Corporation | Plasma etch reactor having a plurality of magnets |
US6492280B1 (en) | 1996-07-03 | 2002-12-10 | Tegal Corporation | Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls |
-
1976
- 1976-04-19 JP JP4364676A patent/JPS52127168A/en active Granted
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5480080A (en) * | 1977-12-09 | 1979-06-26 | Hitachi Ltd | Etching device |
JPS6032972B2 (en) * | 1977-12-09 | 1985-07-31 | 株式会社日立製作所 | Etching device |
JPS5643727A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Pattern formation on film to be etched |
JPS6079726A (en) * | 1983-10-03 | 1985-05-07 | テ−ガル・コ−ポレ−シヨン | Plasma reactor device and method |
JPH0469416B2 (en) * | 1983-10-03 | 1992-11-06 | Tegal Corp | |
JPS60153129A (en) * | 1984-01-20 | 1985-08-12 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
JPH01286911A (en) * | 1988-05-13 | 1989-11-17 | Semiconductor Energy Lab Co Ltd | Formation of carbon film |
JPH0280579A (en) * | 1988-09-16 | 1990-03-20 | Semiconductor Energy Lab Co Ltd | Method and equipment for plasma reaction |
US6048435A (en) * | 1996-07-03 | 2000-04-11 | Tegal Corporation | Plasma etch reactor and method for emerging films |
US6127277A (en) * | 1996-07-03 | 2000-10-03 | Tegal Corporation | Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls |
US6190496B1 (en) | 1996-07-03 | 2001-02-20 | Tegal Corporation | Plasma etch reactor and method for emerging films |
US6354240B1 (en) | 1996-07-03 | 2002-03-12 | Tegal Corporation | Plasma etch reactor having a plurality of magnets |
US6410448B1 (en) | 1996-07-03 | 2002-06-25 | Tegal Corporation | Plasma etch reactor and method for emerging films |
US6492280B1 (en) | 1996-07-03 | 2002-12-10 | Tegal Corporation | Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls |
US6500314B1 (en) | 1996-07-03 | 2002-12-31 | Tegal Corporation | Plasma etch reactor and method |
US6620335B1 (en) | 1996-07-03 | 2003-09-16 | Tegal Corporation | Plasma etch reactor and method |
US6905969B2 (en) | 1996-07-03 | 2005-06-14 | Tegal Corporation | Plasma etch reactor and method |
Also Published As
Publication number | Publication date |
---|---|
JPS5622367B2 (en) | 1981-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5310047A (en) | Electronic circuit | |
JPS52127168A (en) | Etching unit | |
JPS5418664A (en) | Semiconductor switch | |
JPS51144918A (en) | A.c. power generator | |
JPS5320555A (en) | Constant current circuit | |
JPS52127770A (en) | Spatter etching method | |
JPS53131457A (en) | Constant voltage circuit | |
JPS5628458A (en) | Atomic spectrum generating lamp | |
JPS52137904A (en) | High voltage power supply equipment for ultra high frequency electronic tube | |
JPS5246429A (en) | Direct current high voltage power source | |
JPS5241829A (en) | Inverter apparatus | |
JPS534840A (en) | Constant voltage circuit | |
JPS5213778A (en) | Plasma-etching method | |
JPS5326588A (en) | Semicond uctor control device | |
JPS51112166A (en) | Impregnated cathode | |
JPS52149743A (en) | Elevator starting control device | |
JPS538842A (en) | High frequency heater | |
JPS5257543A (en) | High frequency heater | |
JPS538754A (en) | Circuit for preventing rush current | |
JPS5321786A (en) | Insulated conductor | |
JPS52131467A (en) | Control method for plasma etching | |
JPS5335361A (en) | Gate trigger circuit of thyristor | |
JPS51118949A (en) | Electrode assembling device of cathode-ray tube | |
JPS544115A (en) | Wave generator | |
JPS5235974A (en) | Magnetron |